How it Works
Datasheet
Loading...
BUZ78
Datasheet (Siemens)
9 pgs199.42 Kb0

Datasheet BUZ78 Datasheet (Siemens)

Download
Page 1
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
BUZ 78
G D S
Type
V
DS
I
D
R
DS(on
)
Package Ordering Code
BUZ 78 800 V 1.5 A 8 Ω TO-220 AB C67078-S1318-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
T
= 25 °C
C
Pulsed drain current
T
= 25 °C
C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by Avalanche energy, single pulse
I
= 1.5 A,
D
L
= 142 mH,
V
DD
T
= 50 V,
= 25 °C
j
R
GS
= 25 Ω
Gate source voltage Power dissipation
T
jmax
I
D
I
Dpuls
I
AR
E
AR
E
AS
V
GS
P
tot
A
1.5
6
1.5 5 mJ
170
±
20 V
W
T
= 25 °C
C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient
T T R R
j stg
thJC thJA
40
-55 ... + 150 °C
-55 ... + 150 ≤ 3.1 K/W
75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Semiconductor Group 1 07/96
Page 2
BUZ 78
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
= 0 V,
GS
I
= 0.25 mA,
D
T
= 25 °C
j
Gate threshold voltage
=
V
GS
V
DS, ID
= 1 mA
Zero gate voltage drain current
V V
DS DS
= 800 V, = 800 V,
V V
GS GS
= 0 V, = 0 V,
T
= 25 °C
j
T
= 125 °C
j
Gate-source leakage current
V
= 20 V,
GS
V
DS
= 0 V
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
800 - -
2.1 3 4
-
-
0.1 10
1 100
- 10 100
V
µA
nA
Drain-Source on-resistance
V
= 10 V,
GS
I
= 1 A
D
R
DS(on)
Ω
- 6.5 8
Semiconductor Group 2 07/96
Page 3
BUZ 78
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
≥
V
2
DS
I
*
D * RDS(on)max, ID
= 1 A
Input capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Output capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Turn-on delay time
V
= 30 V,
DD
V
GS
= 10 V,
I
= 1.7 A
D
g
fs
C
iss
C
oss
C
rss
t
d(on)
S
1 1.35 -
pF
- 320 430
- 40 60
- 20 30 ns
R
GS
= 50
Ω
Rise time
V R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Turn-off delay time
V R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Fall time
V R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
I
= 1.7 A
D
I
= 1.7 A
D
I
= 1.7 A
D
t
r
t
d(off)
t
f
- 8 12
- 40 60
- 45 60
- 25 35
Semiconductor Group 3 07/96
Page 4
BUZ 78
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
= 25 °C
C
Inverse diode direct current,pulsed
T
= 25 °C
C
Inverse diode forward voltage
V
= 0 V,
GS
I
= 3 A
F
Reverse recovery time
V
= 100 V,
R
I
l
d
i
=
F
/dt = 100 A/µs
S,
F
Reverse recovery charge
V
= 100 V,
R
=
I
l
d
i
F
/dt = 100 A/µs
S,
F
I
I
V
t
Q
S
SM
SD
rr
rr
A
- - 1.5
- - 6 V
- 0.95 1.45 ns
- 370 ­µC
- 2.1 -
Semiconductor Group 4 07/96
Page 5
BUZ 78
Power dissipation
P
= ƒ(
T
tot
P
tot
)
C
45
W
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 °C 160
Drain current
I
= ƒ(
T
D
parameter:
I
D
T
C
)
C
≥
GS
10 V
V
1.6
A
1.2
1.0
0.8
0.6
0.4
0.2
0.0 0 20 40 60 80 100 120 °C 160
T
C
Safe operating area
I
= ƒ(
V
10
10
10
10
A
-1
-2
DS
1
0
10
)
D
0
= 0.01
R
=
DS(on)
, T
D
I
/
DS
V
1
10
D
parameter:
I
D
= 25°C
C
10
Transient thermal impedance
Z
= ƒ(
t
th JC
parameter:
t
= 21.0µs
p
100 µs
1 ms
10 ms
DC
2
3
10
V
V
DS
10
K/W
Z
thJC
10
10
10
10
)
p
D = t
/
T
p
1
0
-1
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
-2
-1
10
10 0 s
t
p
-2
single pulse
-3
-7
-6
-5
-4
10
10
10
10
10
-3
Semiconductor Group
5 07/96
Page 6
BUZ 78
Typ. output characteristics
ƒ(
I
=
V
D
parameter:
I
D
)
DS
t
= 80 µs
p
3.4
P
tot
A
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0 0 10 20 30 40 50 V 70
= 40W
l
i
k
g
h
f
j
e
c
a
V
GS a 4.0
b 4.5 c 5.0 d 5.5
d
e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 l 20.0
b
V
DS
[V]
Typ. drain-source on-resistance
R
DS (on)
parameter:
R
DS (on)
ƒ(
=
I
)
D
V
GS
26
Ω
a
22 20 18 16 14 12 10
8 6 4
V
V
[V] =
[V] =
GS
GS
a
a
b
2
4.0
4.5
0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 A 3.2
5.0
5.5
c
6.0
b
d
e
6.5
7.0
c
f
g
h
7.5
8.0
9.0
d
e
f
g
h
i
j
k
i
j
k
10.0
20.0
I
D
Typ. transfer characteristics
parameter:
≥
V
2 x
DS
2.2
1.8
I
D
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
t
= 80 µs
p
x
R
ID
A
0 1 2 3 4 5 6 7 8 V 10
DS(on)max
I
D
= f (
V
GS
)
V
GS
Typ. forward transconductance
parameter:
≥
V
2 x
DS
2.2
1.8
g
fs
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
t
= 80 µs,
p
ID x R
S
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 A 2.0
DS(on)max
g
=
f
(
I
)
fs
D
I
D
Semiconductor Group 6 07/96
Page 7
BUZ 78
Drain-source on-resistance
R
DS (on)
parameter:
R
DS (on)
= ƒ(
T
)
j
I
32
= 1 A,
D
V
= 10 V
GS
Ω
24
20
16
12
8
4
0
-60 -20 20 60 100 °C 160
98% typ
Gate threshold voltage
V
parameter:
V
GS(th)
T
j
GS (th)
= ƒ(
T
)
j
V
=
V
,
I
GS
4.6 V
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
-60 -20 20 60 100 °C 160
DS
= 1 mA
D
98%
typ
2%
T
j
Typ. capacitances
C = f (V
parameter:
C
)
DS
V
= 0V, f = 1MHz
GS
1
10
nF
0
10
-1
10
-2
10
0 5 10 15 20 25 30 V 40
Forward characteristics of reverse diode
I
= ƒ(
V
F
parameter:
I
F
C
iss
C
oss
C
rss
V
DS
)
SD
Tj, t
= 80 µs
p
1
10
A
0
10
-1
10
T
= 25 °C typ
j
T
= 150 °C typ
j
T
= 25 °C (98%)
j
T
= 150 °C (98%)
j
-2
10
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V
SD
Semiconductor Group
7 07/96
Page 8
BUZ 78
Avalanche energy
parameter:
R
= 25 Ω, L = 142 mH
GS
E
AS
I
= 1.5 A,
D
180
mJ
140
120
100
80
60
40
20
0
20 40 60 80 100 120 °C 160
E
= ƒ(
T
AS
V
= 50 V
DD
)
j
T
j
Typ. gate charge
V
= ƒ(
Q
GS
parameter:
16
V
V
GS
12
10
8
6
4
2
0
)
Gate
I
= 3 A
D puls
0,2
0 10 20 30 40 nC 60
V
DS max
0,8
V
DS max
Q
Gate
Drain-source breakdown voltage
V
(BR)DSS
V
(BR)DSS
= ƒ(
T
)
j
960
V 920 900 880 860 840 820 800 780 760 740
720
-60 -20 20 60 100 °C 160
T
j
Semiconductor Group 8 07/96
Page 9
Package Outlines
TO-220 AB Dimension in mm
BUZ 78
Semiconductor Group 9
07/96
Loading...
Buy Points How it Works FAQ Contact Us Questions and Suggestions Privacy Policy Cookie Policy Terms of Use