Page 1
BUZ71A
N - CHANNEL 50V - 0.1Ω - 13A TO-220
STripFET POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
BUZ 71A 50 V < 0.12 Ω 13 A
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ 100%AVALANCHETESTED
■ HIGHCURRENT CAPABILITY
o
■ 175
C OPERATINGTEMPERATURE
DS(on)
= 0.1 Ω
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDAND RELAYDRIVERS
■ REGULATORS
■ DC-DC& DC-ACCONVERTERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
First digit of the datecode being Zor K identifies silicon characterized in this datasheet.
July 1999
Dra in- sour c e Voltage ( VGS=0) 50 V
DS
Dra in- gate V ol t age (RGS=20kΩ)50V
DGR
Gat e-source Voltage
GS
I
Dra in Current (contin uous) at Tc=25oC13A
D
Dra in Current (pulsed) 52 A
DM
Tot al Dissipation at Tc=25oC40W
tot
St orage Tem pe r at ur e -65 to 175
stg
T
Max. Operat ing Junc tion Tem perature 175
j
20 V
±
DIN HUMIDITY CAT EG O RY (DIN 40040) E
IE C CLIMATIC CAT EG O RY (DI N IEC 68-1) 55/150/ 56
o
C
o
C
1/8
Page 2
BUZ71A
THERMAL DATA
R
thj-case
R
thj-amb
AVALANCHE CHARACTERISTICS
Symbol Parameter Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case M a x 3.75
Ther mal Resistanc e Junct ion-ambient Max 62.5
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse A v alan che Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max)
j
14 A
50 mJ
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 50 V
Break dow n Volt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tj=125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=1mA 2.1 3 4 V
Sta t ic Drain-sour c e On
VGS=10V ID=9A 0.1 0.12
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capacitanc e
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacit a nc e
VDS=25V ID=9A 4 7.7 S
VDS=25V f=1MHz VGS= 0 760
100
30
µ
µA
Ω
pF
pF
pF
A
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
2/8
t
d(on)
t
t
d(off)
t
Turn-on Time
Rise T ime
r
Tur n-of f Delay Time
Fall T ime
f
VDD=30V ID=8A
=50 Ω VGS=10V
R
GS
20
65
70
35
ns
ns
ns
ns
Page 3
BUZ71A
ELECTRICAL CHARACTERISTICS
(continued)
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5 %
Source-drain Current
Source-drain Current
13
52
(pulsed)
(∗)ForwardOnVoltage ISD=28A VGS=0 1.8 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 14 A di/dt = 100 A/ µs
V
=30V Tj= 150oC
DD
65
0.17
Charge
A
A
ns
µC
SafeOperating Area ThermalImpedance
3/8
Page 4
BUZ71A
OutputCharacteristics
Transconductance
TransferCharacteristics
Static Drain-sourceOn Resistance
Gate Charge vs Gate-sourceVoltage
4/8
CapacitanceVariations
Page 5
BUZ71A
NormalizedGate ThresholdVoltage vs
Temperature
Source-drainDiode Forward Characteristics
NormalizedOn Resistancevs Temperature
5/8
Page 6
BUZ71A
Fig. 1:
UnclampedInductiveLoad TestCircuit
Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad
Fig. 2:
UnclampedInductiveWaveform
Fig. 4: Gate Charge test Circuit
Fig. 5:
Test Circuit For InductiveLoad Switching
And Diode Recovery Times
6/8
Page 7
TO-220 MECHANICALDATA
BUZ71A
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
H2
G
F
P011C
C
D1
L2
Dia.
L5
L7
L6
L9
7/8
Page 8
BUZ71A
Information furnished is believed to beaccurateand reliable.However, STMicroelectronics assumes no responsibilityfor the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under anypatent or patent rights ofSTMicroelectronics. Specificationmentioned in this publicationare
subjecttochange withoutnotice.This publication supersedes andreplaces all informationpreviously supplied.STMicroelectronics products
are not authorized for use as critical components in lifesupportdevices or systems without express written approval of STMicroelectronics.
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1999STMicroelectronics – Printed in Italy– All Rights Reserved
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