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BUZ51
Datasheet (Siemens)
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Datasheet BUZ51 Datasheet (Siemens)

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Page 1
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
BUZ 51
G D S
Type
V
DS
I
D
R
DS(on
)
Package Ordering Code
BUZ 51 1000 V 3.4 A 4 Ω TO-220 AB C67078-S1344-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
T
= 29 °C
C
Pulsed drain current
T
= 25 °C
C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by Avalanche energy, single pulse
I
= 3.4 A,
D
L
= 67 mH,
V
= 50 V,
DD
T
= 25 °C
j
R
GS
= 25 Ω
Gate source voltage Power dissipation
T
jmax
I
D
I
Dpuls
I
AR
E
AR
E
AS
V
GS
P
tot
A
3.4
13.5
3.4 12 mJ
410
±
20 V
W
T
= 25 °C
C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient
T T R R
j stg
thJC thJA
125
-55 ... + 150 °C
-55 ... + 150 ≤ 1 K/W 75
DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Semiconductor Group 1 07/96
Page 2
BUZ 51
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
= 0 V,
GS
I
= 0.25 mA,
D
T
= 25 °C
j
Gate threshold voltage
=
V
GS
V
DS, ID
= 1 mA
Zero gate voltage drain current
V
= 1000 V,
DS
V
= 1000 V,
DS
V V
GS GS
= 0 V, = 0 V,
T
= 25 °C
j
T
= 125 °C
j
Gate-source leakage current
V
= 20 V,
GS
V
DS
= 0 V
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
1000 - -
2.1 3 4
-
-
0.1 10
1 100
- 10 100
V
µA
nA
Drain-Source on-resistance
V
= 10 V,
GS
I
= 2.2 A
D
R
DS(on)
Ω
- 3.6 4
Semiconductor Group 2 07/96
Page 3
BUZ 51
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
≥
V
2
DS
I
*
D * RDS(on)max, ID
= 2.2 A
Input capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Output capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Turn-on delay time
V
= 30 V,
DD
V
GS
= 10 V,
I
= 2.1 A
D
g
fs
C
iss
C
oss
C
rss
t
d(on)
S
1 3-
pF
- 980 1300
- 85 130
- 45 70 ns
R
GS
= 50
Ω
Rise time
V R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Turn-off delay time
V R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Fall time
V R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
I
= 2.1 A
D
I
= 2.1 A
D
I
= 2.1 A
D
t
r
t
d(off)
t
f
- 15 25
- 70 105
- 175 235
- 70 95
Semiconductor Group 3 07/96
Page 4
BUZ 51
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
= 25 °C
C
Inverse diode direct current,pulsed
T
= 25 °C
C
Inverse diode forward voltage
V
= 0 V,
GS
I
= 6.8 A
F
Reverse recovery time
V
= 100 V,
R
I
l
d
i
=
F
/dt = 100 A/µs
S,
F
Reverse recovery charge
V
= 100 V,
R
=
I
l
d
i
F
/dt = 100 A/µs
S,
F
I
I
V
t
Q
S
SM
SD
rr
rr
A
- - 3.4
- - 13.5 V
- 0.95 1.4 µs
- 0.3 ­µC
- 2.5 -
Semiconductor Group 4 07/96
Page 5
BUZ 51
Power dissipation
P
= ƒ(
T
tot
P
tot
)
C
130
W 110 100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
Drain current
I
= ƒ(
T
D
parameter:
I
D
T
C
)
C
≥
GS
10 V
V
3.6
A
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0 0 20 40 60 80 100 120 °C 160
T
C
Safe operating area
I
= ƒ(
V
10
10
10
10
A
)
DS
D
2
1
0
R
-1 0
10
= 0.01
DS
V
=
DS(on)
10
, T
D
I
/
1
D
parameter:
I
D
= 25°C
C
10
Transient thermal impedance
Z
= ƒ(
t
th JC
parameter:
10
K/W
10
Z
t
= 23.0µs
p
100 µs
1 ms
10 ms
DC
2
3
10
V
V
DS
thJC
10
10
10
10
10
)
p
D = t
/
T
p
1
0
-1
-2
D = 0.50
0.20
-3
10
-7
10
single pulse
-6
10
-5
-4
10
-3
10
-4
-5
10
0.10
0.05
0.02
0.01
-2
-1
10
10 0 s
t
p
Semiconductor Group
5 07/96
Page 6
BUZ 51
Typ. output characteristics
ƒ(
I
=
V
D
parameter:
I
D
)
DS
t
= 80 µs
p
7.5
P
= 125W
tot
A
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0 0 10 20 30 40 50 60 V 75
l
k
j
h
i
g
Typ. drain-source on-resistance
R
DS (on)
parameter:
f
V
[V]
GS a 4.0
e
b 4.5 c 5.0 d 5.5 e 6.0
d
f 6.5 g 7.0 h 7.5 i 8.0
c
j 9.0 k 10.0 l 20.0
b
a
V
DS
R
DS (on)
ƒ(
=
I
)
D
V
GS
13
Ω
11 10
9 8 7 6 5 4 3 2 1
0
0.0 1.0 2.0 3.0 4.0 5.0 A 6.5
a
V
V
[V] =
[V] =
GS
GS
a
a
b
5.0
5.5
c
4.0
4.5
6.0
b
d
e
f
6.5
7.0
7.5
c
g
h
8.0
9.0
d
k
i
j
k
10.0
20.0
I
D
e
f
g
h
i
j
Typ. transfer characteristics
parameter:
≥
V
2 x
DS
4.0
3.2
I
D
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
t
= 80 µs
p
x
R
ID
A
0 1 2 3 4 5 6 7 8 V 10
DS(on)max
I
D
= f (
V
GS
)
V
GS
Typ. forward transconductance
parameter:
≥
V
2 x
DS
4.0
3.2
g
fs
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
t
= 80 µs,
p
ID x R
S
0.0 0.4 0.8 1.2 1.6 2.0 2.4 A 3.2
DS(on)max
g
=
f
(
I
)
fs
D
I
D
Semiconductor Group 6 07/96
Page 7
BUZ 51
Drain-source on-resistance
R
DS (on)
parameter:
R
DS (on)
= ƒ(
T
)
j
I
20
= 2.2 A,
D
V
= 10 V
GS
Ω
16
14
12
10
8
98%
6
4
2 0
-60 -20 20 60 100 °C 160
typ
Gate threshold voltage
V
parameter:
V
GS(th)
T
j
GS (th)
= ƒ(
T
)
j
V
=
V
,
I
GS
4.6 V
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
-60 -20 20 60 100 °C 160
DS
= 1 mA
D
98%
typ
2%
T
j
Typ. capacitances
C = f (V
parameter:
C
)
DS
V
= 0V, f = 1MHz
GS
1
10
nF
0
10
-1
10
-2
10
0 5 10 15 20 25 30 V 40
Forward characteristics of reverse diode
I
= ƒ(
V
F
parameter:
I
F
C
iss
C
oss
C
rss
V
DS
)
SD
Tj, t
= 80 µs
p
2
10
A
1
10
0
10
T
= 25 °C typ
j
T
= 150 °C typ
j
T
= 25 °C (98%)
j
T
= 150 °C (98%)
j
-1
10
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V
SD
Semiconductor Group
7 07/96
Page 8
BUZ 51
Avalanche energy
parameter:
R
= 25 Ω, L = 67 mH
GS
E
AS
I
= 3.4 A,
D
450
mJ
350
300
250
200
150
100
50
0
20 40 60 80 100 120 °C 160
E
= ƒ(
T
AS
V
= 50 V
DD
)
j
T
j
Typ. gate charge
V
= ƒ(
Q
GS
parameter:
16
V
V
GS
12
10
8
6
4
2
0
)
Gate
I
= 5 A
D puls
0 20 40 60 80 100 120 140 160 nC 190
0,2
V
DS max
0,8
V
Q
DS max
Gate
Drain-source breakdown voltage
V
(BR)DSS
V
(BR)DSS
= ƒ(
T
)
j
1200
V 1160 1140 1120 1100 1080 1060 1040 1020 1000
980 960 940 920
900
-60 -20 20 60 100 °C 160
T
j
Semiconductor Group 8 07/96
Page 9
Package Outlines
TO-220 AB Dimension in mm
BUZ 51
Semiconductor Group 9
07/96
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