How it Works
Datasheet
Loading...
BUZ341
Datasheet (Siemens)
9 pgs217.35 Kb0

Datasheet BUZ341 Datasheet (Siemens)

Download
Page 1
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
BUZ 341
G D S
Type
V
DS
I
D
R
DS(on
)
Package Ordering Code
BUZ 341 200 V 33 A 0.07 Ω TO-218 AA C67078-S3128-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
T
= 28 °C
C
Pulsed drain current
T
= 25 °C
C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by Avalanche energy, single pulse
I
= 33 A,
D
L
= 1.09 mH,
V
DD
= 50 V,
T
= 25 °C
j
R
GS
= 25 Ω
Gate source voltage Power dissipation
T
jmax
I
D
I
Dpuls
I
AR
E
AR
E
AS
V
GS
P
tot
A
33
132
33 16 mJ
790
±
20 V
W
T
= 25 °C
C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient
T T R R
j stg
thJC thJA
170
-55 ... + 150 °C
-55 ... + 150 ≤ 0.74 K/W
75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Semiconductor Group 1 07/96
Page 2
BUZ 341
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
= 0 V,
GS
I
= 0.25 mA,
D
T
= 25 °C
j
Gate threshold voltage
=
V
GS
V
DS, ID
= 1 mA
Zero gate voltage drain current
V V
DS DS
= 200 V, = 200 V,
V V
= 0 V,
GS
= 0 V,
GS
T
= 25 °C
j
T
= 125 °C
j
Gate-source leakage current
V
= 20 V,
GS
V
DS
= 0 V
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
200 - -
2.1 3 4
-
-
0.1 10
1 100
- 10 100
V
µA
nA
Drain-Source on-resistance
V
= 10 V,
GS
I
= 21 A
D
R
DS(on)
Ω
- 0.06 0.07
Semiconductor Group 2 07/96
Page 3
BUZ 341
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
≥
V
2
DS
I
*
D * RDS(on)max, ID
= 21 A
Input capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Output capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Turn-on delay time
V
= 30 V,
DD
V
GS
= 10 V,
I
= 3 A
D
g
fs
C
iss
C
oss
C
rss
t
d(on)
S
15 23 -
pF
- 2600 3900
- 500 750
- 230 350 ns
R
GS
= 50
Ω
Rise time
V R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Turn-off delay time
V R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Fall time
V R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
I
= 3 A
D
I
= 3 A
D
I
= 3 A
D
t
r
t
d(off)
t
f
- 40 60
- 110 170
- 450 680
- 160 240
Semiconductor Group 3 07/96
Page 4
BUZ 341
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
= 25 °C
C
Inverse diode direct current,pulsed
T
= 25 °C
C
Inverse diode forward voltage
V
= 0 V,
GS
I
= 66 A
F
Reverse recovery time
V
= 100 V,
R
I
l
d
i
=
F
/dt = 100 A/µs
S,
F
Reverse recovery charge
V
= 100 V,
R
=
I
l
d
i
F
/dt = 100 A/µs
S,
F
I
I
V
t
Q
S
SM
SD
rr
rr
A
- - 33
- - 132 V
- 1.3 1.6 ns
- 230 ­µC
- 1.8 -
Semiconductor Group 4 07/96
Page 5
BUZ 341
Power dissipation
P
= ƒ(
T
tot
P
tot
)
C
180
W
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 °C 160
Drain current
I
= ƒ(
T
D
parameter:
I
D
T
C
)
C
≥
GS
10 V
T
C
V
34
A
28
24
20
16
12
8
4
0
0 20 40 60 80 100 120 °C 160
Safe operating area
I
= ƒ(
V
10
10
10
10
10
)
DS
D
3
A
2
R
1
0
-1 0
10
= 0.01
V
=
DS(on)
, T
/
DS
10
D
parameter:
I
D
C
I
D
1
= 25°C
10
DC
2
t
= 350.0ns
p
1 µs 10 µs
100 µs
1 ms
10 ms
V
DS
Transient thermal impedance
Z
= ƒ(
t
th JC
parameter:
10
K/W
Z
thJC
10
10
V
10
)
p
D = t
/
T
p
0
-1
D = 0.50
0.20
-2
single pulse
-3
-7
-6
-5
-4
10
10
10
10
10
-3
10
0.10
0.05
0.02
0.01
-2
-1
10
10 0 s
t
p
Semiconductor Group
5 07/96
Page 6
BUZ 341
Typ. output characteristics
ƒ(
I
=
V
D
parameter:
I
D
)
DS
t
= 80 µs
p
75
P
= 170W
tot
A 65 60 55 50 45 40 35 30 25 20 15 10
5 0
0 2 4 6 8 V 11
l
j
k
i
h
Typ. drain-source on-resistance
R
DS (on)
parameter:
g
V
[V]
GS a 4.0
f
b 4.5 c 5.0 d 5.5
e
e 6.0 f 6.5 g 7.0 h 7.5
d
i 8.0 j 9.0 k 10.0
c
l 20.0
b
a
V
DS
R
DS (on)
ƒ(
=
I
)
D
V
GS
0.22
5.5
a
b
c
d
6.0
6.5
Ω
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
V
V
V
[V] =
[V] =
[V] =
GS
GS
GS
a
a
a
0.02
4.0
4.5
5.0
0.00 0 10 20 30 40 50 A 65
7.0
b
e
f
7.5
8.0
c
g
h
i
9.0
10.0
20.0
d
e
f
g
h
i
j
j
I
D
Typ. transfer characteristics
parameter:
≥
V
2 x
DS
I
D
t
= 80 µs
p
x
R
ID
65
A 55 50 45 40 35 30 25 20 15 10
5 0
0 1 2 3 4 5 6 7 8 V 10
DS(on)max
I
D
= f (
V
GS
)
V
GS
Typ. forward transconductance
parameter:
≥
V
2 x
DS
g
fs
t
= 80 µs,
p
ID x R
30
S 26 24 22 20 18 16 14 12 10
8 6 4 2
0
0 10 20 30 40 A 60
DS(on)max
g
=
f
(
I
)
fs
D
I
D
Semiconductor Group 6 07/96
Page 7
BUZ 341
Drain-source on-resistance
R
DS (on)
parameter:
R
DS (on)
= ƒ(
T
)
j
I
0.26
= 21 A,
D
V
= 10 V
GS
Ω
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
-60 -20 20 60 100 °C 160
98% typ
Gate threshold voltage
V
parameter:
V
GS(th)
T
j
GS (th)
= ƒ(
T
)
j
V
=
V
,
I
GS
4.6 V
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
-60 -20 20 60 100 °C 160
DS
= 1 mA
D
98%
typ
2%
T
j
Typ. capacitances
C = f (V
parameter:
C
)
DS
V
= 0V, f = 1MHz
GS
1
10
nF
0
10
-1
10
-2
10
0 5 10 15 20 25 30 V 40
Forward characteristics of reverse diode
I
= ƒ(
V
F
parameter:
C
iss
C
oss
C
rss
V
DS
I
F
)
SD
Tj, t
= 80 µs
p
3
10
A
2
10
1
10
T
= 25 °C typ
j
T
= 150 °C typ
j
T
= 25 °C (98%)
j
T
= 150 °C (98%)
j
0
10
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V
SD
Semiconductor Group
7 07/96
Page 8
BUZ 341
Avalanche energy
parameter:
R
= 25 Ω, L = 1.09 mH
GS
E
AS
I
= 33 A,
D
800
mJ
600
500
400
300
200
100
0
20 40 60 80 100 120 °C 160
E
= ƒ(
T
AS
V
= 50 V
DD
)
j
T
j
Typ. gate charge
V
= ƒ(
Q
GS
parameter:
16
V
V
GS
12
10
8
6
4
2
0
)
Gate
I
= 50 A
D puls
0 20 40 60 80 100 120 140 nC 180
0,2
V
DS max
0,8
V
DS max
Q
Gate
Drain-source breakdown voltage
V
(BR)DSS
V
(BR)DSS
= ƒ(
T
)
j
240
V 230 225 220 215 210 205 200 195 190 185
180
-60 -20 20 60 100 °C 160
T
j
Semiconductor Group 8 07/96
Page 9
Package Outlines
TO-218 AA Dimension in mm
BUZ 341
Semiconductor Group 9
07/96
Loading...
Buy Points How it Works FAQ Contact Us Questions and Suggestions Privacy Policy Cookie Policy Terms of Use