Page 1
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
BUZ 21
Pin 1 Pin 2 Pin 3
G D S
Type
V
DS
I
D
R
DS(on
)
Package Ordering Code
BUZ 21 100 V 21 A 0.085 Ω TO-220 AB C67078-S1308-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
= 25 °C
C
Pulsed drain current
T
= 25 °C
C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
Avalanche energy, single pulse
I
= 21 A,
D
L
= 340 µH,
V
DD
T
= 25 V,
= 25 °C
j
R
GS
= 25 Ω
Gate source voltage
Power dissipation
T
jmax
I
D
I
Dpuls
I
AR
E
AR
E
AS
V
GS
P
tot
A
21
84
21
11 mJ
100
±
20 V
W
T
= 25 °C
C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
T
T
R
R
j
stg
thJC
thJA
75
-55 ... + 150 °C
-55 ... + 150
≤ 1.67 K/W
75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Semiconductor Group 1 01/97
Page 2
BUZ 21
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
= 0 V,
GS
I
= 0.25 mA,
D
T
= 25 °C
j
Gate threshold voltage
=
V
GS
V
DS, ID
= 1 mA
Zero gate voltage drain current
V
V
DS
DS
= 100 V,
= 100 V,
V
V
GS
GS
= 0 V,
= 0 V,
T
= 25 °C
j
T
= 125 °C
j
Gate-source leakage current
V
= 20 V,
GS
V
DS
= 0 V
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
100 - -
2.1 3 4
-
-
0.1
10
1
100
- 10 100
V
µA
nA
Drain-Source on-resistance
V
= 10 V,
GS
I
= 13 A
D
R
DS(on)
Ω
- 0.065 0.085
Semiconductor Group 2 01/97
Page 3
BUZ 21
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
≥
V
2
DS
I
*
D * RDS(on)max, ID
= 13 A
Input capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Output capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Turn-on delay time
V
= 30 V,
DD
V
GS
= 10 V,
I
= 3 A
D
g
fs
C
iss
C
oss
C
rss
t
d(on)
S
8 11 -
pF
- 1000 1300
- 300 530
- 150 240
ns
R
GS
= 50
Ω
Rise time
V
R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Turn-off delay time
V
R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Fall time
V
R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
I
= 3 A
D
I
= 3 A
D
I
= 3 A
D
t
r
t
d(off)
t
f
- 25 40
- 50 75
- 160 210
- 80 110
Semiconductor Group 3 01/97
Page 4
BUZ 21
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
= 25 °C
C
Inverse diode direct current,pulsed
T
= 25 °C
C
Inverse diode forward voltage
V
= 0 V,
GS
I
= 42 A
F
Reverse recovery time
V
= 30 V,
R
I
l
d
i
=
F
/dt = 100 A/µs
S,
F
Reverse recovery charge
V
= 30 V,
R
=
I
l
d
i
F
/dt = 100 A/µs
S,
F
I
I
V
t
Q
S
SM
SD
rr
rr
A
- - 21
- - 84
V
- 1.3 1.7
ns
- 150 µC
- 0.48 -
Semiconductor Group 4 01/97
Page 5
BUZ 21
Power dissipation
P
= ƒ(
T
tot
P
tot
)
C
80
W
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
Drain current
I
= ƒ(
T
D
parameter:
I
D
T
C
)
C
≥
GS
10 V
T
C
V
22
A
18
16
14
12
10
8
6
4
2
0
0 20 40 60 80 100 120 °C 160
Safe operating area
I
= ƒ(
V
10
10
10
10
10
)
DS
D
3
A
2
R
1
0
-1
0
10
= 0.01
V
=
DS(on)
, T
/
DS
D
parameter:
I
D
= 25°C
C
I
D
1
10
t
= 22.0µs
p
DC
10
V
100 µs
1 ms
10 ms
2
Transient thermal impedance
Z
= ƒ(
t
th JC
parameter:
10
K/W
Z
thJC
10
10
10
10
V
DS
)
p
D = t
/
T
p
1
0
-1
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
-2
-1
10
10 0 s
t
p
-2
single pulse
-3
-7
-6
-5
-4
10
10
10
10
10
-3
Semiconductor Group
5 01/97
Page 6
BUZ 21
Typ. output characteristics
ƒ(
I
=
V
D
parameter:
I
D
)
DS
t
= 80 µs
p
50
P
= 75W
tot
A
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 V 9
l
j
k
i
Typ. drain-source on-resistance
R
DS (on)
parameter:
h
g
e
c
a
V
GS
a 4.0
b 4.5
c 5.0
d 5.5
e 6.0
f
f 6.5
g 7.0
h 7.5
i 8.0
j 9.0
d
k 10.0
l 20.0
b
V
DS
[V]
R
DS (on)
ƒ(
=
I
)
D
t
0.26
= 80 µs,
p
a
T
= 25 °C
j
b
c
d
e
Ω
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
V
V
V
[V] =
[V] =
[V] =
GS
GS
GS
a
a
a
b
c
d
e
f
g
h
0.02
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0.00
0 5 10 15 20 25 30 35 A 45
8.0
9.0
10.0
i
20.0
f
g
h
i
j
j
I
D
Typ. transfer characteristics
parameter:
≥
V
2 x
DS
I
D
t
= 80 µs
p
x
R
ID
60
A
50
45
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
DS(on)max
I
D
= f (
V
GS
)
V
GS
Typ. forward transconductance
parameter:
≥
V
2 x
DS
g
fs
t
= 80 µs,
p
ID x R
20
S
16
14
12
10
8
6
4
2
0
0 10 20 30 40 A 55
DS(on)max
g
=
f
(
I
)
fs
D
I
D
Semiconductor Group 6 01/97
Page 7
BUZ 21
Drain-source on-resistance
R
DS (on)
parameter:
R
DS (on)
= ƒ(
T
)
j
I
0.28
= 13 A,
D
V
GS
= 10 V
Ω
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
-60 -20 20 60 100 °C 160
98%
typ
Gate threshold voltage
V
parameter:
V
GS(th)
T
j
GS (th)
= ƒ(
T
)
j
V
=
V
,
I
GS
4.6
V
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
-60 -20 20 60 100 °C 160
DS
= 1 mA
D
98%
typ
2%
T
j
Typ. capacitances
C = f (V
parameter:
C
)
DS
V
= 0V, f = 1MHz
GS
1
10
nF
0
10
-1
10
-2
10
0 5 10 15 20 25 30 V 40
Forward characteristics of reverse diode
I
= ƒ(
V
F
parameter:
I
F
C
iss
C
oss
C
rss
V
DS
)
SD
Tj, t
= 80 µs
p
2
10
A
1
10
0
10
T
= 25 °C typ
j
T
= 150 °C typ
j
T
= 25 °C (98%)
j
T
= 150 °C (98%)
j
-1
10
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V
SD
Semiconductor Group
7 01/97
Page 8
BUZ 21
Avalanche energy
parameter:
R
= 25 Ω, L = 340 µH
GS
E
AS
I
= 21 A,
D
110
mJ
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 °C 160
E
= ƒ(
T
AS
V
= 25 V
DD
)
j
T
j
Typ. gate charge
V
= ƒ(
Q
GS
parameter:
16
V
V
GS
12
10
8
6
4
2
0
)
Gate
I
= 36 A
D puls
0 10 20 30 40 50 nC 70
0,2
V
DS max
0,8
V
DS max
Q
Gate
Drain-source breakdown voltage
V
(BR)DSS
V
(BR)DSS
= ƒ(
T
)
j
120
V
116
114
112
110
108
106
104
102
100
98
96
94
92
90
-60 -20 20 60 100 °C 160
T
j
Semiconductor Group 8 01/97
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