Datasheet BUZ12A Datasheet (Siemens)

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

BUZ 12 A

Not for new design

Pin 1 Pin 2 Pin 3

G D S

Type

BUZ 12 A 50 V 42 A 0.035

V

DS

I

D

R

DS(on)

Ω

Package Ordering Code

TO-220 AB C67078-S1331-A3

Maximum Ratings Parameter Symbol Values Unit

Continuous drain current

T

= 44 °C

C

Pulsed drain current

T

= 25 °C

C

Avalanche current,limited by

T

jmax

Avalanche energy,periodic limited by Avalanche energy, single pulse

I

= 42 A,

D

L

= 23.2 µH,

V

DD

T

= 25 V,

= 25 °C

j

R

GS

= 25

Ω

Gate source voltage Power dissipation

T

= 25 °C

C

Operating temperature

T

jmax

I

D

I

Dpuls

I

AR

E

AR

E

AS

V

GS

P

tot

T

j

A

42

168

42

2.5 mJ

41

±

20 V

W

125

-55 ... + 150 °C Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient

T R R

stg

thJC thJA

-55 ... + 150

≤

1 K/W

≤

75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Semiconductor Group 1 07/96

BUZ 12 A

Not for new design

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

= 0 V,

GS

I

= 0.25 mA,

D

T

= 25 °C

j

Gate threshold voltage

V

GS

V

=

DS, ID

= 1 mA

Zero gate voltage drain current

V V

DS DS

= 50 V, = 50 V,

V V

GS GS

= 0 V, = 0 V,

T

= 25 °C

j

T

= 125 °C

j

Gate-source leakage current

V

= 20 V,

GS

V

DS

= 0 V

Drain-Source on-resistance

V

= 10 V,

GS

I

= 32 A

D

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

50 - -

2.1 3 4

-

0.1 10

1 100

- 10 100

- 0.03 0.035

V

µA

nA

Ω

Semiconductor Group 2 07/96

BUZ 12 A

Not for new design

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

≥

V

2

DS

I

*

D * RDS(on)max, ID

= 32 A

Input capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Output capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Turn-on delay time

V R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

= 3 A

D

g

fs

C

iss

C

oss

C

rss

t

d(on)

S

12 23 -

pF

- 1700 2300

- 800 1200

- 280 420 ns

- 35 50

Rise time

V R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

Turn-off delay time

V R

DD

GS

= 30 V,

= 50 Ω

V

GS

= 10 V,

Fall time

V R

DD

GS

= 30 V,

= 50 Ω

V

GS

= 10 V,

I

= 3 A

D

I

= 3 A

D

I

= 3 A

D

t

r

t

d(off)

t

f

- 85 130

- 220 280

- 140 180

Semiconductor Group 3 07/96

BUZ 12 A

Not for new design

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current

T

= 25 °C

C

Inverse diode direct current,pulsed

T

= 25 °C

C

Inverse diode forward voltage

V

= 0 V,

GS

I

= 84 A

F

Reverse recovery time

V

= 30 V,

R

=

I

l

d

i

F

/dt = 100 A/µs

S,

F

Reverse recovery charge

V

= 30 V,

R

=

I

l

d

i

F

/dt = 100 A/µs

S,

F

I

V

t

Q

S

SM

SD

rr

A

- - 42

- - 168 V

- 1.8 2.2 ns

- 80 µC

- 0.14 -

Semiconductor Group 4 07/96

BUZ 12 A

Not for new design

Power dissipation

P

= ƒ(

T

tot

P

tot

)

C

130

W 110 100

90

80

70

60

50

40

30

20

10

0

0 20 40 60 80 100 120 °C 160

Drain current

I

= ƒ(

T

D

parameter:

I

D

T

C

)

C

≥

GS

10 V

T

C

V

45

A

35

30

25

20

15

10

5

0

0 20 40 60 80 100 120 °C 160

Safe operating area

I

= ƒ(

V

10

A

)

DS

D

= 0

3

2

R

1

0

10

DS(on)

, T

=

C

DS

V

D

parameter:

I

D

= 25°C

I

D

/

1

10

t

= 47.0µs

p

DC

100 µs

1 ms

10 ms

V

10

DS

Transient thermal impedance

Z

= ƒ(

t

th JC

parameter:

10

K/W

10

Z

thJC

10

2

10

)

p

D = t

/

T

p

1

0

-1

-2

D = 0.50

0.20

-3

10

-7

10

single pulse

-6

10

-5

-4

10

-3

10

-4

-5

10

0.10

0.05

0.02

0.01

-2

-1

10

10 0 s

t

p

Semiconductor Group

5 07/96

BUZ 12 A

Not for new design

Typ. output characteristics

ƒ(

I

=

V

D

parameter:

I

D

)

DS

t

= 80 µs

p

100

P

= 125W

tot

A

80

70

60

50

40

30

20

10

0

0.0 1.0 2.0 3.0 4.0 5.0 V 7.0

l

j

k

Typ. drain-source on-resistance

R

DS (on)

parameter:

i

V

[V]

GS

h

a 4.0 b 4.5 c 5.0

g

d 5.5 e 6.0

f

f 6.5 g 7.0 h 7.5

e

i 8.0 j 9.0 k 10.0

d

l 20.0

c

b

a

V

DS

R

DS (on)

ƒ(

=

I

)

D

V

GS

0.11

a

b

c

d

e

8.0

f

h

i

9.0

10.0

Ω

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

V

[V] =

GS

a

b

c

d

e

f

0.01

4.0

4.5

5.0

5.5

6.0

0.00 0 10 20 30 40 50 60 70 A 90

6.5

7.0

7.5

g

h

i

j

k

j

k

20.0

I

D

Typ. transfer characteristics

parameter:

≥

V

2 x

DS

I

D

t

= 80 µs

p

x

R

ID

60

A 50 45 40 35 30 25 20 15 10

5 0

0 1 2 3 4 5 6 7 8 V 10

DS(on)max

I

D

= f (

V

GS

)

V

GS

Typ. forward transconductance

parameter:

≥

V

2 x

DS

g

fs

t

= 80 µs,

p

ID x R

30

S

24 22 20 18 16 14 12 10

8 6 4 2

0

0 10 20 30 40 50 A 65

DS(on)max

g

=

f

(

I

)

fs

D

I

D

Semiconductor Group 6 07/96

BUZ 12 A

Not for new design

Drain-source on-resistance

R

DS (on)

parameter:

R

DS (on)

= ƒ(

T

)

j

I

0.09

= 32 A,

D

V

= 10 V

GS

Ω

0.07

0.06

0.05

98%

0.04

0.03

0.02

0.01

0.00

-60 -20 20 60 100 °C 160

typ

Gate threshold voltage

V

parameter:

V

GS(th)

T

j

GS (th)

= ƒ(

T

)

j

V

=

V

,

I

GS

4.6 V

4.0

3.6

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0.0

-60 -20 20 60 100 °C 160

DS

= 1 mA

D

98%

typ

2%

T

j

Typ. capacitances

C = f (V

parameter:

C

)

DS

V

= 0V, f = 1MHz

GS

1

10

nF

0

10

-1

10

-2

10

0 5 10 15 20 25 30 V 40

Forward characteristics of reverse diode

I

= ƒ(

V

F

parameter:

I

C

iss

C

oss

C

rss

V

DS

F

)

SD

Tj, t

= 80 µs

p

3

10

A

2

10

1

10

T

= 25 °C typ

j

T

= 150 °C typ

j

T

= 25 °C (98%)

j

T

= 150 °C (98%)

j

0

10

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

V

SD

Semiconductor Group

7 07/96

BUZ 12 A

Not for new design

Avalanche energy

parameter:

R

= 25 Ω, L = 23.2 µH

GS

E

AS

I

= 42 A,

D

45

mJ

35

30

25

20

15

10

5

0

20 40 60 80 100 120 °C 160

E

= ƒ(

T

AS

V

= 25 V

DD

)

j

T

j

Typ. gate charge

V

= ƒ(

Q

GS

parameter:

16

V

GS

12

10

8

6

4

2

0

)

Gate

I

= 63 A

D puls

0 10 20 30 40 50 60 70 80 nC 100

0,2

V

DS max

0,8

V

DS max

Q

Gate

Drain-source breakdown voltage

V

(BR)DSS

V

(BR)DSS

= ƒ(

T

)

j

60

V

57 56 55 54 53 52 51 50 49 48 47 46

45

-60 -20 20 60 100 °C 160

T

j

Semiconductor Group 8 07/96

Package Outlines

TO-220 AB Dimension in mm

BUZ 12 A

Not for new design

Semiconductor Group 9

07/96