Datasheet BUXD87 Datasheet (SGS Thomson Microelectronics)

Page 1
®
HIGH VOLTAGE NPN POWER TRANSISTOR
REVERSE PINS OUT Vs STANDARD
IPAK/DPAK PACKAG E
HIGH VOLTAGE CAPABILITY
HIGH DC CURRENT GAIN
THROUGH-HO LE IPAK (TO -251) POW E R
PACKAGE IN TU BE (SUFFIX "-1")
POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
BUXD87
3
2
1
3
1
APPLICATIONS:
SWITCH MODE POWER SUPPLI ES
GENERAL PURPOSE SWITCHING
IPAK DPAK
TO-251 TO-252
(Suffix "-1") (Suffix "T4")
DESCRIPTION
The BUXD87 is manufactured us ing High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability.
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V V V
I
I P
T
Collector-Emitter Voltage (VBE = -1.5V) 1000 V
CEV
Collector-Emitter Voltage (IB = 0) 450 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 0.5 A
I
C
Collector Peak Current (tp < 5 ms) 1 A
CM
I
Base Current 0.3 A
B
Base Peak Current (tp < 5 ms) 0.6 A
BM
Total Dissipation at Tc = 25 oC20W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
April 1999
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BUXD87
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max
6.25 100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-off Current (V
= -1.5V)
BE
Emitter Cut-off Current (I
= 0)
C
Collector-Emitter
= 1000 V
V
CE
V
= 1000 V Tj = 125 oC
CE
= 5 V 1 mA
V
EB
100
1
IC = 100 mA 450 V
Sustaining Voltage
V
BEO
Collector-Base
IC = 10 mA 5 V
Sustaining Voltage
V
Collector-Emitter
CE(sat)
Saturation Voltage
V
Base-Emitter
BE(sat)
IC = 0.1 A IB = 0.01 A I
= 0.2 A IB = 0.02 A
C
0.8 1
IC = 0.2 A IB = 0.02 A 1 V
Saturation Voltage
h
DC Current Gain IC = 50 mA VCE = 5 V
FE
f
Transition Frequency IC = 50 mA VCE = 10 V f=1MHz 20 MHz
T
RESISTIVE LOAD
t
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
s
t
f
Storage Time Fall Time
I
= 40 mA VCE = 5 V 12
C
VCC = 250 V IC = 200 mA I
= 40 mA IB2= -80 mA
B1
= 20 µs
t
p
50
4.5
0.5
µA
mA
V V
µs µs
Safe Operating Are a Derating Curves
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Page 3
BUXD87
DC Current Gain
Collector Emitter Saturation Voltage
DC Current Gain
Base Emitter Sat uration Volt age
Reverse B iased SOA
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Page 4
BUXD87
TO-251 (IPAK) MECHANICAL DATA
DIM.
A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A3 0.70 1.30 0.028 0.051
B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 B3 0.85 0.033 B5 0.30 0.012 B6 0.95 0.037
C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.237 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 15.90 16.30 0.626 0.642
L 9.00 9.40 0.354 0.370 L1 0.80 1.20 0.031 0.047 L2 0.80 1.00 0.031 0.039 V1 10
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
o
10
o
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P032N_E
Page 5
TO-252 (DPAK) MECHANICAL DATA
BUXD87
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0
o
o
8
o
0
0
o
P032P_B
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BUXD87
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is granted by implicatio n or otherwise under an y patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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