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HIGH POWER NPN SILICON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ HIGH VOLTAGE CAPABILITY
■ HIGH CURRENT CAPABILITY
■ FAST SWITCHING SPEED
APPLICATIONS:
■ HIGH FREQUENCY AND EFFICENCY
CONVERTERS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
BUX98C
1
2
DESCRIPTION
The BUX98C is a silicon multiepitaxial mesa NP N
TO-3
(version R)
transistor in Jedec TO-3 metal case, intended for
use in switching and industrial applications from
single and three-phase mains operations.
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
V
I
I
CMP
I
P
T
Collector-Emitter Voltage (RBE ≤ 0 Ω) 1200 V
CER
Collector-Emitter Voltage (VBE = 0) 1200 V
CES
Collector-Emitter Voltage 700 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Collector Current 30 A
I
C
Collector Peak Current (tp < 5 ms) 60 A
CM
Collector Peak Current non Repetitive 80 A
Base Current 8 A
I
B
Base Peak Current (tp < 5 ms) 30 A
BM
Total Dissipation at Tc = 25 oC250W
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
o
C
o
C
June 1997
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BUX98C
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.7
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CES
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (R
= 10 Ω)
BE
Collector Cut-off
Current (V
BE
= 0 )
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= V
V
CE
VCE = V
V
VCE = V
V
V
CES
T
CES
= V
CE
CES
T
CES
= V
CE
CEO
= 5 V 2 mA
CB
= 125 oC
case
= 125 oC
case
1
8
1
6
2mA
IC = 100 mA 700 V
Sustaining Voltage
V
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %
∗ Collector-Emitter
CE(sat)
Saturation Voltage
∗ Base-Emitter
BE(sat)
Saturation Voltage
t
t
on
s
t
f
Turn-on Time
Storage Time
Fall Time
IC = 12 A IB = 3 A
I
= 16 A IB = 5 A
C
I
= 20 A IB = 8 A
C
IC = 12 A IB = 3 A
I
= 20 A IB = 8 A
C
RESISTIVE LOAD
V
CC
I
B1
= 250 V IC = 12 A
= - IB2 = 3 A
0.5
1.5
0.2
1.5
2
3
1.6
2
1
3
0.8
mA
mA
mA
mA
V
V
V
V
V
µs
µs
µs
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TO-3 (version R) MECHANICAL DATA
BUX98C
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.7 0.460
B 0.96 1.10 0.037 0.043
C 1.70 0.066
D 8.7 0.342
E 20.0 0.787
G 10.9 0.429
N 16.9 0.665
P 26.2 1.031
R 3.88 4.09 0.152 0.161
U 39.50 1.555
V 30.10 1.185
mm inch
P
A
G
U
V
N
O
B
D
C
E
R
P003N
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BUX98C
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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