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®
HIGH VOLTAGE NPN POWER TRANSISTOR
■
STMicroelectronics PREFERRED
SALESTYPE
■
NPN TRANSISTOR
■
HIGH VOL T A G E C A PABILITY
■
HIGH CURRENT CAPABILITY
■
FAST SWITCHING SPEED
APPLICATIONS
■
HIGH FREQUENCY AND EFFICENCY
CONVERTERS
■
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUX98APW is a silicon Multiepitaxial Mesa
NPN transistor in TO-247 plastic package. It is
intended for use in industrial applications from
single and three-phase mains operation.
BUX98APW
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
V
I
I
P
T
Collector-Emitter Voltage (RBE = ≤ 10 Ω)
CER
Collector-Base Voltage (VBE = 0) 1000 V
CES
Collector-Emitter Voltage (IB = 0) 450 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Collector Current 24 A
I
C
Collector Peak Current (tp < 5 ms) 36 A
CM
Base Current 5 A
I
B
Base Peak Current (tp < 5 ms) 8 A
BM
Total Power Dissipation at T
tot
Storage Temperature -65 to 150
stg
Max Operating Junction Temperature 150
T
j
February 2002
case
< 25 oC
1000 V
200 W
o
C
o
C
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BUX98APW
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.63
o
C/W
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CES
I
CEO
I
EBO
V
(BR)EBO
Collector Cut-off
Current (R
= 5 Ω)
BE
Collector Cut-off
Current (V
BE
= 0 )
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
Emitter-Base
V
= 1000 V
CE
V
= 1000 V TC = 125 oC
CE
= 1000 V
V
CE
V
= 1000 V TC = 125 oC
CE
= 450 V 2 mA
V
CE
= 5 V 2 mA
V
EB
I
= 100 mA 7 V
E
200
2
200
2
Breakdown Voltage
(I
= 0)
C
I
V
CEO(sus)
∗ Collector-Emitter
= 200 mA L = 25 mH 450 V
C
Sustaining Voltage
(I
= 0)
B
V
∗ Collector-Emitter
CE(sat)
= 16 A IB = 3.2 A 1.2 V
I
C
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
= 16 A IB = 3.2 A 1.5 V
I
C
Saturation Voltage
RESISTIVE LOAD
on
s
t
f
Turn-on Time
Storage Time
Fall Time
t
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %
V
= 150 V IC = 16 A
CC
I
= - IB2 = 3.2 A 1
B1
3
0.8
µA
mA
µA
mA
µs
µs
µs
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Page 3
TO-247 MECHANICAL DATA
BUX98APW
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
mm inch
P025P
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BUX98APW
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any in fringe ment o f patents or other rig hts of third par ties wh ich may result from its u se. N o li cen se is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized f or use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectro nics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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