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HIGH VOLTAGE SILICON POWER TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ HIGH VOLTAGE CAPA BILITY (450V V
■ MINIMUM LO T- TO- LO T SPR E AD FO R
RELIAB LE OPERATION
■ HIGH DC CURRENT GAIN
APPLICATIONS
■ FLYBACK AND FORW ARD S INGLE
TRANSI ST OR LOW POW ER CO NV ERT E RS
CEO
)
BUX87
1
2
3
DESCRIPTION
The BUX87 is manufactured using High Voltage
SOT-32
Multi Epitaxial Planar technology for high
switching speeds and high voltage withstand
capability.
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE = -1.5V) 1000 V
CES
Collector-Emitter Voltage (IB = 0) 450 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
I
Collector Current 0.5 A
C
Collector Peak Current (tp < 5 ms) 1 A
CM
I
Base Current 0.3 A
B
Base Peak Current (tp < 5 ms) 0.6 A
BM
Total Dissipation at Tc = 25 oC40W
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
June 1997
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BUX87
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.12
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
= -1.5V)
BE
Emitter Cut-off Current
(I
= 0)
C
Collector-Emitter
= 1000 V
V
CE
V
= 1000 V Tj = 125 oC
CE
= 5 V 1 mA
V
EB
100
1
IC = 100 mA 450 V
Sustaining Voltage
V
BEO
Collector-Base
IC = 10 mA 5 V
Sustaining Voltage
V
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
∗ Base-Emitter
BE(sat)
IC = 0.1 A IB = 0.01 A
I
= 0.2 A IB = 0.02 A
C
0.8
1
IC = 0.2 A IB = 0.02 A 1 V
Saturation Voltage
∗ DC Current Gain IC = 50 mA VCE = 5 V
h
FE
f
Transition Frequency IC = 50 mA VCE = 10 V f=1MHz 20 MHz
T
RESISTIVE LOAD
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
s
t
f
Storage Time
Fall Time
I
= 40 mA VCE = 5 V 12
C
V
= 250 V IC = 200 mA
CC
I
= 40 mA IB2= -80 mA
B1
t
= 20 µs
p
50
4.5
0.5
µA
mA
V
V
µs
µs
Safe Operating Are a Derating Curves
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BUX87
DC Current Gain
Collector Emitter Sat uration Volt age
DC Current Gain
Base Emitter Satur ation Voltage
Reverse B iased SOA
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BUX87
SOT-32 (TO-126) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e2.2 0.087
e3 4.15 4.65 0.163 0.183
F3.8 0.150
G 3 3.2 0.118 0.126
H2.540.100
H2 2.15 0.084
mm inch
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H2
0016114
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BUX87
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
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