Datasheet BUX85F, BUX84F Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BUX84F; BUX85F

Silicon diffused power transistors

Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06

1997 Aug 14

Philips Semiconductors Product specification

Silicon diffused power transistors BUX84F; BUX85F

DESCRIPTION

High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.

PINNING

PIN DESCRIPTION

1 base
2 collector

1

3 emitter

APPLICATIONS

mb mounting base;

MBB008

electrically isolated

• Converters

• Inverters

from all pins

1

23

MBK109

• Switching regulators

• Motor control systems.

Fig.1 Simplified outline

(SOT186) and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CESM

collector-emitter peak voltage VBE=0

BUX84F − 800 V
BUX85F − 1000 V

V

CEO

collector-emitter voltage open base

BUX84F − 400 V
BUX85F − 450 V

V

CEsat

I

Csat

I

C

I

CM

P

tot

t

f

collector-emitter saturation voltage see Fig.4 − 1V
collector saturation current − 1A
collector current (DC) − 2A
collector current (peak value) − 3A
total power dissipation Th≤ 25 °C − 18 W
fall time 0.4 −µs

2

3

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-h

thermal resistance from junction to external heatsink note 1 7.2 K/W

note 2 4.7 K/W

R

th j-a

thermal resistance from junction to ambient 55 K/W

Notes

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

2. Mounted with heatsink compound and 30 ±5 N force on centre of package.

ISOLATION CHARACTERISTICS

SYMBOL PARAMETER TYP. MAX. UNIT

V
C

isolM
isol

isolation voltage from all terminals to external heatsink (peak value) − 1500 V
isolation capacitance from collector to external heatsink 12 − pF

1997 Aug 14 2

Philips Semiconductors Product specification

Silicon diffused power transistors BUX84F; BUX85F

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CESM

V

CEO

I

C

I

CM

I

B

I

BM

P

tot

T

stg

T

j

collector-emitter peak voltage VBE=0

BUX84F − 800 V
BUX85F − 1000 V

collector-emitter voltage open base

BUX84F − 400 V

BUX85F − 450 V
collector current (DC) − 2A
collector current (peak value) − 3A
base current (DC) − 0.75 A
base current (peak value) − 1A
total power dissipation Th≤ 25 °C; note 1 − 18 W
storage temperature −65 +150 °C
junction temperature − 150 °C

Note

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CEOsust

collector-emitter sustaining voltage IC= 100 mA; I

BUX84 400 −−V

L = 25 mH; see Figs 2 and 3

Boff

=0;

BUX85 450 −−V

V

CEsat

collector-emitter saturation voltage IC= 0.3 A; IB=30mA;

−−0.8 V

see Fig.4
I

= 1 A; IB= 200 mA;

C

−−1V

see Fig.4

V

BEsat

base-emitter saturation voltage IC= 1 A; IB= 200 mA;

−−1.1 V

see Fig.5

I

CES

collector-emitter cut-off current VCE=V

V

CE=VCESmax

; VBE=0 −−0.2 mA

CESmax

; VBE=0;

−−1.5 mA

Tj= 125 °C

I

EBO

h

FE

emitter-base cut-off current VEB=5V; IC=0 −−1mA
DC current gain VCE=5V; IC= 5 A; see Fig.6 15 −−

V

=5V; IC= 100 mA;

CE

20 50 100

see Fig.6

f

T

transition frequency VCE=10V; IC= 200 mA;

− 20 − MHz

f=1MHz

1997 Aug 14 3

Philips Semiconductors Product specification

Silicon diffused power transistors BUX84F; BUX85F

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Switching times resistive load (see Fig.7)

t

on

t

s

t

f

turn-on time I

storage time I

fall time I

= 1 A; I

Con

I

= −400 mA; VCC= 250 V

Boff

= 1 A; I

Con

I

= −400 mA; VCC= 250 V

Boff

= 1 A; I

Con

I

= −400 mA; VCC= 250 V

Boff

I

= 1 A; I

Con

= −400 mA; VCC= 250 V;

I

Boff

= 200 mA;

Bon

= 200 mA;

Bon

= 200 mA;

Bon

= 200 mA;

Bon

Tmb=95°C

− 0.2 0.5 µs

− 2 3.5 µs

− 0.4 −µs

−−1.4 µs

ndbook, halfpage

30 to 60 Hz

Fig.2 Test circuit for collector-emitter

100 to 200 Ω

L

300 Ω

6 V

sustaining voltage.

horizontal

oscilloscope

vertical

1 Ω

MGE252

+ 50 V

I

handbook, halfpage

C

(mA)

250
200

100

0

min

V

CEOsust

Fig.3 Oscilloscope display for collector-emitter

sustaining voltage.

MGE239

VCE (V)

1997 Aug 14 4

Philips Semiconductors Product specification

Silicon diffused power transistors BUX84F; BUX85F

(1)

handbook, full pagewidth

4

V

CEsat

(V)

3

2

1

0

0

(1) IC= 0.3A. (2) IC= 0.5A. (3) IC= 0.7A. (4) IC=1A. Tj=25°C; solid line: typical values; dotted line: maximum values.

(2) (3) (4)

0.05 0.25

0.15

0.20.1

MGB908

IB (A)

Fig.4 Collector-emitter saturation voltage as a function of base current; typical values.

0.3

1.0

handbook, halfpage

V

BEsat

(V)

0.75

0.5
0 300

Tj=25°C.
(1) IC=1A.
(2) IC= 0.5A.
(3) IC= 0.3A.

100 200

IB (mA)

Fig.5 Base-emitter saturation voltage as a

function of emitter current; typical values.

MGB904

(1)
(2)

(3)

2

10

handbook, halfpage

h

FE

10

1

−2

10

Fig.6 DC current gain; typical values.

MGB879

typ

−1

10

1

IC (A)

10

1997 Aug 14 5

Philips Semiconductors Product specification

Silicon diffused power transistors BUX84F; BUX85F

handbook, halfpage

90%

I

B

10%

90%

I

C

10%

Fig.7 Switching time waveforms with

tr ≤30 ns

t

on

resistive load.

MBB731

I

B on

t

I

B off

I

C on

t

f

t

s

t

handbook, full pagewidth

tp=20µs; T =2 ms; VIM=15V.

V

IM

+25 V

T

t

p

V

i

100

Ω

BD139

BD140

Fig.8 Test circuit resistive load.

1997 Aug 14 6

100 Ω

30 Ω

200

Ω

680

µF

50

Ω

680

µF

250

Ω

D.U.T.

100

µF

V

250V

MGE253

CC

Philips Semiconductors Product specification

Silicon diffused power transistors BUX84F; BUX85F

PACKAGE OUTLINE

Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 exposed tabs SOT186

E

E

1

P

D

1

D

m

q

A

A

1

L

1

b

L

0.55

0.38

1

2

23

1

b

e

e

1

D

17.0

16.4

D

1

7.9

10.2

7.5

9.6

REFERENCES

c

w M

0 5 10 mm

scale

E

5.7

5.3

e

1

2.54

E

e

5.08

1

14.3

13.5

L

DIMENSIONS (mm are the original dimensions)

A

A

b

UNIT

mm

Note

1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.

OUTLINE
VERSION

SOT186 TO-220

4.4

4.0

1

2.9

2.5

b

1

1.5

0.9

1.3

0.7

IEC JEDEC EIAJ

Q

c

(1)

L

1

4.8

4.0

m

L

2

3.2

0.9

10 0.4

3.0

0.5

EUROPEAN

PROJECTION

1.4

1.2

qQPL

w

4.4

4.0

ISSUE DATE

97-06-11

1997 Aug 14 7

Philips Semiconductors Product specification

Silicon diffused power transistors BUX84F; BUX85F

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Aug 14 8

Philips Semiconductors Product specification

Silicon diffused power transistors BUX84F; BUX85F

NOTES

1997 Aug 14 9

Philips Semiconductors Product specification

Silicon diffused power transistors BUX84F; BUX85F

NOTES

1997 Aug 14 10

Philips Semiconductors Product specification

Silicon diffused power transistors BUX84F; BUX85F

NOTES

1997 Aug 14 11

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Printed in The Netherlands 137067/00/01/pp12 Date of release: 1997 Aug 14 Document order number: 9397 750 02724