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BUX80
HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ FAST SWITCHING SPEED
APPLICATIONS
■ SWITCHING R E G ULAT O RS
■ MOTOR CONTROL
■ HIGH FREQ UE NC Y AND EFF ICE NCY
CONVERTERS
1
2
DESCRIPTION
The BUX80 is a silicon multiepitaxial mesa NPN
TO-3
transistor in Jedec TO-3 metal case, particularly
intended for converters, inverters, switching
regulators and motors control system
applications.
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
V
I
P
T
Collector-emitter Voltage (VBE = 0) 800 V
CES
Collector-emitter Voltage (RBE = 50Ω) 500 V
CER
Collector-emitter Voltage (IB = 0) 400 V
CEO
Emitter-base Voltage (Ic = 0) 10 V
EBO
Collector Current 10 A
I
C
Collector Peak Current 15 A
CM
Base Current 5 A
I
B
Total Power Dissipation at T
tot
Storage Temperature -65 to 150
stg
Max Operating Junction Temperature 150
T
j
≤ 40 oC 100 W
case
o
C
o
C
June 1997
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BUX80
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.1
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 800 V
V
CE
V
= 800 V T
CE
= 10 V 10 mA
V
BE
= 100 mA 400 V
I
C
case
= 125oC
1
3
SustainingVoltage
(I
= 0)
B
V
CER(sus)
∗ Collector-Emitter
I
= 100 mA 500 V
C
Sustaining
Voltage (R
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = 1.2 A VCE = 5 V 30
FE
t
t
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
Turn-on Time IC = 5 A IB1 = 1 A
on
Storage Time IC = 5 A IB1 = 1 A
s
t
Fall Time IC = 5 A IB1 = 1 A
f
= 50 Ω)
BE
IC = 5 A IB = 1 A
I
= 8 A IB = 2.5 A
C
IC = 5 A IB = 1 A
I
= 8 A IB = 2.5 A
C
V
= 250 V
CC
I
= - 2 A VCC= 250 V
B2
I
= - 2 A VCC= - 250 V
B2
1.5
3
1.4
1.8
0.5 µs
3.5 µs
0.5 µs
mA
mA
V
V
V
V
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P003F
TO-3 MECHANICAL DATA
BUX80
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 0.97 1.15 0.038 0.045
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
mm inch
P
A
G
U
V
N
O
B
D
C
E
R
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BUX80
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems wi thout express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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