Datasheet BUX48A, BUX48 Datasheet (Motorola)

3–401

Motorola Bipolar Power Transistor Device Data

  
    

The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,
power switching in inductive circuits where fall time is critical. They are particularly
suited for line–operated SWITCHMODE applications such as:

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

• Deflection Circuits

Fast Turn–Off Times

60 ns Inductive Fall Time — 25_C (Typ)
120 ns Inductive Crossover Time — 25_C (Typ)

Operating Temperature Range –65 to +200_C
100_C Performance Specified for:

Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltage
Leakage Currents (125_C)

MAXIMUM RATINGS

Rating

Symbol

BUX48

BUX48A

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

Collector–Emitter Voltage

V

CEO(sus)

400

450

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector–Emitter Voltage (VBE = – 1.5 V)

VCEX

850

1000

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Emitter Base Voltage

V

EB

7

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector Current — Continuous

— Peak (1)
— Overload

I

C

I

CM
I

OI

15
30
60

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Adc

Base Current — Continuous

— Peak (1)

I

B

I

BM

5

20

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Adc

Total Power Dissipation — TC = 25_C

— TC = 100_C

Derate above 25_C

P

D

175
100

1

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Watts

W/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

–65 to +200

ÎÎÎ

ÎÎÎ

ÎÎÎ

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

Thermal Resistance, Junction to Case

R

θJC

1

ÎÎÎ

ÎÎÎ

ÎÎÎ

_

C/W

Maximum Lead Temperature for Soldering Purposes:

1/8″ from Case for 5 Seconds

T

L

275

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

_

C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

SWITCHMODE is a trademark of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by BUX48/D

 Motorola, Inc. 1995





15 AMPERES

NPN SILICON

POWER TRANSISTORS

400 AND 450 VOLTS

V

(BR)CEO

850–1000 VOLTS

V

(BR)CEX

175 WATTS

CASE 1–07

TO–204AA

(TO–3)

REV 7

 

3–402

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

OFF CHARACTERISTICS (1)

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 200 mA, IB = 0) L = 25 mH BUX48

BUX48A

V

CEO(sus)

400
450

—
—

—
—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector Cutoff Current

(V

CEX

= Rated Value, V

BE(off)

= 1.5 Vdc)

(V

CEX

= Rated Value, V

BE(off)

= 1.5 Vdc, TC = 125_C)

I

CEX

—
—

—
—

0.2
2

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

Collector Cutoff Current

(VCE = Rated V

CEX

, RBE = 10 Ω) TC = 25_C

TC = 125_C

I

CER

—
—

—
—

0.5
3

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

I

EBO

—

—

0.1

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

Emitter–Base Breakdown Voltage

(IE = 50 mA – IC = 0)

V

(BR)EBO

7

—

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

I

S/b

See Figure 12

ÎÎÎ

ÎÎÎ

ÎÎÎ

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 13

ÎÎÎ

ÎÎÎ

ÎÎÎ

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 10 Adc, VCE = 5 Vdc) BUX48
(IC = 8 Adc, VCE = 5 Vdc) BUX48A

h

FE

8
8

—
—

—
—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 10 Adc, IB = 2 Adc)
(IC = 15 Adc, IB = 3 Adc) BUX48
(IC = 10 Adc, IB = 2 Adc, TC = 100_C)
(IC = 8 Adc, IB = 1.6 Adc)
(IC = 12 Adc, IB = 2.4 Adc) BUX48A
(IC = 8 Adc, IB = 1.6 Adc, TC = 100_C)

V

CE(sat)

—
—
—
—
—
—

—
—
—
—
—
—

1.5
5
2

1.5
5
2

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage

(IC = 10 Adc, IB = 2 Adc) BUX48
(IC = 10 Adc, IB = 2 Adc, TC = 100_C)
(IC = 8 Adc, IB = 1.6 Adc)
(IC = 8 Adc, IB = 1.6 Adc, TC = 100_C) BUX48A

V

BE(sat)

—
—
—
—

—
—
—
—

1.6

1.6

1.6

1.6

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, f

test

= 1 MHz)

C

ob

—

—

350

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

pF

SWITCHING CHARACTERISTICS Resistive Load (Table 1)

Delay Time

t

d

—

0.1

0.2

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Rise Time

IC = 10 A, IB = 2 A BUX48
IC = 8 A, IB = 1.6 A BUX48A

t

r

—

0.4

0.7

ÎÎÎ

ÎÎÎ

ÎÎÎ

Storage Time

IC = 8 A, IB = 1.6 A BUX48A
Duty Cycle = 2%, V

BE(off)

= 5 V

t

s

—

1.3

2

ÎÎÎ

ÎÎÎ

ÎÎÎ

Fall Time

Tp = 30 µs, VCC = 300 V

t

f

—

0.2

0.4

ÎÎÎ

ÎÎÎ

ÎÎÎ

Inductive Load, Clamped (Table 1)

Storage Time

C

= 10 A

t

sv

—

1.3

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Fall Time

IC = 10 A
IB1 = 2 A BUX48

(TC = 25_C)

t

fi

—

0.06

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

Storage Time

t

sv

—

1.5

2.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

Crossover Time

IC = 8 A
I

= 1.6 A BUX48A

_

C)

t

c

—

0.3

0.6

ÎÎÎ

ÎÎÎ

ÎÎÎ

Fall Time

IB1 = 1.6 A BUX48A

_

C)

t

fi

—

0.17

0.35

ÎÎÎ

ÎÎÎ

ÎÎÎ

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2%.
Vcl = 300 V, V

BE(off)

= 5 V, Lc = 180µH

I

(TC = 100

 

3–403

Motorola Bipolar Power Transistor Device Data

C, CAPACITANCE (pF)

, COLLECTOR CURRENT ( A)

µ

I

C

V

BE

, BASE–EMITTER VOLTAGE (VOLTS)

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.1
IC, COLLECTOR CURRENT (AMPS)

0.3 3

2

1

0.7

0.5

5

IC, COLLECTOR CURRENT (AMPS)

3
2

1

0.7

0.5

0.3

0.2

0.3

IC = 5 A

50

1

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

1

2 3 5 8 10 20 30 50

20

10

7

Figure 2. Collector Saturation Region

0.1

IB, BASE CURRENT (AMPS)

0.1

0.3 0.5

3

0.5

0.3

30

h

FE

, DC CURRENT GAIN

5
3

2

VCE = 5 V

1 2 3 4

Figure 3. Collector–Emitter Saturation Voltage

1011 2 3 7 10 5020 305

Figure 4. Base–Emitter Voltage

Figure 5. Collector Cutoff Region

10

5

1

–0.4

Figure 6. Capacitance

VBE, BASE–EMITTER VOLTAGE (VOLTS)

10

–1

–0.2 0 0.2 0.4 0.6

10 k

1

VR, REVERSE VOLTAGE (VOLTS)

10

10

1 k

10

0

100 1000

100

FORWARD

0.1

VCE = 250 V

125°C

90%

75

°

C

7.5 A

TC = 25°C

TJ = 25°C

TJ = 100°C

REVERSE

10

1

10

2

10

3

10

4

C

ib

β

f

= 5

10%

10 A 15 A

90%

10%

TJ = 150°C

100°C

25°C

C

ob

TJ = 25°C

DC CHARACTERISTICS

 

3–404

Motorola Bipolar Power Transistor Device Data

Table 1. Test Conditions for Dynamic Performance

V

CEO(sus)

RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING

INPUT

CONDITIONS

CIRCUIT

VALUES

TEST CIRCUITS

20

1

0

PW Varied to Attain
IC = 200 mA

L

coil

= 25 mH, VCC = 10 V

R

coil

= 0.7 Ω

L

coil

= 180 µH

R

coil

= 0.05 Ω

VCC = 20 V

VCC = 300 V
RL = 83 Ω
Pulse Width = 10 µs

INDUCTIVE TEST CIRCUIT

TURN–ON TIME

IB1 adjusted to

obtain the forced

hFE desired

TURN–OFF TIME

Use inductive switching

driver as the input to

the resistive test circuit.

t1 Adjusted to
Obtain I

C

Test Equipment

Scope — Tektronix

475 or Equivalent

RESISTIVE TEST CIRCUITOUTPUT WAVEFORMS

2

I

B1

1
2

V

clamp

= 300 V

RB ADJUSTED TO ATTAIN DESIRED I

B1

+10 V

220 100

680 pF

100

PULSES

δ

= 3%

33

2 W

33

2 W

160

D1

22

µ

F

D3

22

680 pF

MM3735

1N4934D1 D2 D3 D4

2N3763

160

680 pF

22

D4

0.22

µ

F

D3

2N6438

+10 V

MR854

0.1

µ

F

2N6339

MR854

Ib1 ADJUST

dTb ADJUST

Ib2 ADJUST

V

CC

t

1

I

C

V

CE

I

C(pk)

tf Clamped

t

f

t

t

t

2

TIME

VCE

or

V

clamp

1
2

TUT

R

L

V

CC

t1 ≈

L

coil (IC

pk

)

V

CC

t2 ≈

L

coil (IC

pk

)

V

Clamp

1

INPUT

2

R

coil

L

coil

V

CC

V

clamp

RS =

0.1

Ω

1N4937

OR

EQUIVALENT

TUT

SEE ABOVE FOR
DETAILED CONDITIONS

V

BE(off)

, BASE–EMITTER VOLTAGE (VOLTS)

Figure 7. Inductive Switching Measurements Figure 8. Peak–Reverse Current

1 2 3 4 5 6

10

8

6

4

2

0

, BASE CURRENT (AMPS)I

B2(pk)

0

β

f

= 5

IC = 10 A

t

rv

TIME

I

C

V

CE

90% I

B1

t

sv

IC pk

V

CE(pk)

90% V

CE(pk)

90% I

C(pk)

10% V

CE(pk)

10%

IC pk

2% I

C

I

B

t

fi

t

ti

t

c

 

3–405

Motorola Bipolar Power Transistor Device Data

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times
have been defined and a pply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% V

clamp

trv = Voltage Rise Time, 10–90% V

clamp

tfi = Current Fall Time, 90–10% I

C

tti = Current Tail, 10–2% I

C

tc = Crossover Time, 10% V

clamp

to 10% I

C

An enlarged portion of the inductive switching waveforms

is shown in Figure 7 to aid in the visual identity of these
terms.

For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval a nd can be obtained
using the standard equation from AN–222:

P

SWT

= 1/2 VCCIC(tc)f

In general, trv + tfi ] tc. However, at lower test currents this
relationship may not be valid.

As is common with most switching transistors, resistive
switching is specified at 25_C and has become a benchmark
for designers. However, for designers of high frequency con­verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100_C.

1

Figure 9. Storage Time, t

sv

IC, COLLECTOR CURRENT (AMPS)

2 5

0.1

Figure 10. Crossover and Fall Times

5
3

1

0.7

0.5

50

IC, COLLECTOR CURRENT (AMPS)

3 7

0

Figure 11a. Turn–Off Times versus Forced Gain

β

f

, FORCED GAIN

0.01
1 2 4 5

2

0.5

0.3

0.2

Figure 11b. Turn–Off Times versus Ib2/Ib

1

Ib2/Ib

1

3

1

0.1

3

TC = 25°C
IC = 10 A
V

BE(off)

= 5 V

0.01

1

0.5

0.2

0.3

0.1

t, TIME ( s)

µ

2

0.3

0.2

2010 30

β

f

= 5

t, TIME ( s)

µ

0.05

0.02

0.03

1 2 5 503 7 2010 30

β

f

= 5

t

c

t

fi

0.05

0.03

0.02

6 8 97 10

t

sv

t

fi

t

c

t, TIME ( s)

µ

0.01

2

0.5

0.3

0.2

3

1

0.1

0.05

0.03

0.02

0 1 2 4 53 6 8 97 10

TC = 25°C
IC = 10 A

β

f

= 5

t

sv

t

fi

t

c

TC = 25°C

TC = 100°C

TC = 100°C

TC = 100°C

TC = 25°C

TC = 25°C

INDUCTIVE SWITCHING

 

3–406

Motorola Bipolar Power Transistor Device Data

The Safe Operating Area figures shown in Figures 12 and 13 are
specified for these devices under the test conditions shown.

1

Figure 12. Forward Bias Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5 50

0.01

30
10

2
1

5

0.5

100010 100

0

FIgure 13. Reverse Bias Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0

200 400

40

20

50

600

TC = 25°C

TC = 100°C
IC/IB1

≥

5

I

C

, COLLECTOR CURRENT (AMPS)

0.1

200

DC

1 ms

I

C

, COLLECTOR CURRENT (AMPS)

tr ≤ 0.7 µs

LIMIT ONLY
FOR TURN ON

2 20 500

30

10

0.2

0.05

0.02

800 1000

V

BE(off)

= 5 V

BUX48

BUX48A

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a
transistor: average junction temperature and second break­down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate.

The data of Figure 12 is based on TC = 25_C; T

J(pk)

is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC w 25_C. Second breakdown limitations do not der­ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 12 may be found at any case tem­perature by using the appropriate curve on Figure 14.

T

J(pk)

may be calculated from the data in Figure 1 1. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im­posed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to e mitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current conditions during re­verse biased turn–off. This rating is verified under clamped
conditions so that the device is never subjected to an ava­lanche mode. Figure 13 gives RBSOA characteristics.

0

Figure 14. Power Derating

TC, CASE TEMPERATURE (°C)

0

40 80

80

40

100

120

POWER DERATING FACTOR (%)

160 200

60

20

SECOND BREAKDOWN

DERATING

THERMAL
DERATING

 

3–407

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

1

0.01

0.02

0.5

0.2

0.1

0.05

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.05 1 2 5 10 20 50 100 200 500

R

θ

JC

(t) = r(t) R

θ

JC

θ

JC

= 1

°

C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t

1

T

J(pk)

– TC = P

(pk)

R

θ

JC

(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

D = 0.5

0.2

0.01

SINGLE PULSE

0.1

0.1 0.50.2

RESISTANCE (NORMALIZED)

1000 2000

Figure 15. Thermal Response

SINGLE

PULSE

0.05

0.02

OVERLOAD CHARACTERISTICS

0

Figure 16. Rated Overload Safe Operating Area

(OLSOA)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

300

100

40

60

500100 400

TC = 25°C

I

C

, COLLECTOR CURRENT (AMPS)

450200

20

tp = 10 µs

BUX48

BUX48A

80

OLSOA

OLSOA applies when maximum collector current is limited
and known. A good example is a circuit where an inductor is
inserted between the transistor and the bus, which limits the
rate of rise of collector current to a known value. If the tran­sistor is then turned off within a specified amount of time, the
magnitude of collector current is also known.

Maximum allowable collector–emitter voltage versus col­lector current is plotted for several pulse widths. (Pulse width
is defined as the time lag between the fault condition and the
removal of base drive.) Storage time of the transistor has
been factored into the curve. Therefore, with bus voltage and
maximum collector current known, Figure 16 defines the
maximum time which can be allowed for fault detection and
shutdown of base drive.

OLSOA is measured in a common–base circuit (Figure 18)
which allows precise definition of collector–emitter voltage
and collector current. This is the same circuit that is used to
measure forward–bias safe operating area.

0

Figure 17. IC = f(dV/dt)

dV/dt (KV/µs)

2 4

4

2

5

6 8 10

3

1

I

C

(AMP)

500 µF
500 V

V

EE

V

CC

Figure 18. Overload SOA Test Circuit

Notes:

• VCE = VCC + V

BE

• Adjust pulsed current source
for desired IC, t

p

RBE = 100

Ω

RBE = 10

Ω

RBE = 2.2

Ω

RBE = 0

 

3–408

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 1.550 REF 39.37 REF
B ––– 1.050 ––– 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77

G 0.430 BSC 10.92 BSC

H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N ––– 0.830 ––– 21.08

Q 0.151 0.165 3.84 4.19

U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

A

N

E

C

K

–T–

SEATING
PLANE

2 PLD

M

Q

M

0.13 (0.005) Y

M

T

M

Y

M

0.13 (0.005) T

–Q–

–Y–

2

1

U

L

G

B

V

H

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

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INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

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and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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