Page 1
®
FAST-SWITCHING POWER TRANSISTOR
■ STMicroelectronics PRE FERRE D
SALESTYPE
■ NPN TRANSISTOR
■ HIGH VOLT A G E
■ FAST SWITCHING
■ OFF-LINE APPLICATIONS TO 380V
BUX348
APPLICATIONS
■ SWITCH MODE P OW ER SUP P LIE S
■ UNINTERRUPTAB LE POWE R SUP PLY
■ DC AND AC MOTOR CO NTR O L
ABSOL UT E MAXIMU M RATINGS
1
2
TO-3
(version "S")
INTERNAL SCHEMATIC DIAGRAM
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE = -1.5 V) 850 V
CEV
Collector-Emitter Voltage (IB = 0) 450 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Collector Current 45 A
I
C
Collector Peak Current 60 A
CM
Base Current 9 A
I
B
Base Peak Current (tp < 5 ms) 15 A
BM
Total Power Dissipation at T
tot
Storage Temperature -65 to 200
stg
Junction Temperature 200
T
j
case
≤ 25 oC
300 W
March 2003
o
C
o
C
1/4
Page 2
BUX348
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.58
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-off
Current (R
= 10 Ω)
BE
Collector Cut-off
Current
(V
= -1.5V)
BE
Emitter Cut-off
Current (I
= 0)
C
∗ Collector-Emitter
V
= V
CE
VCE = V
V
V
V
I
C
CEV
Tc = 100 oC
CEV
= V
CE
= V
CE
= 5 V 2 mA
EB
CEV
Tc = 100 oC
CEV
= 0.2 A L = 25 mH 450 V
0.4
2
0.4
2
Sustaining Voltage
(I
= 0)
B
V
V
CE(sat)
EBO
Emitter-Base Voltage
(I
= 0)
C
∗ Collector-Emitter
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
di
/dt Rated of Rise on-state
C
Collector Current
V
∗ Collector-Emitter
CE(3µs)
Dynamic Voltage
V
∗ Collector-Emitter
CE(5µs)
Dynamic Voltage
= 100 mA 7 V
I
E
IC = 30 A IB = 6 A
I
= 30 A IB = 6 A Tj = 100 oC
C
IC = 30 A IB = 6 A
I
= 30 A IB = 6 A Tj = 100 oC
C
VCC = 300V IB1 = 9 A RC = 0
3µs Tj = 100 oC
t
p =
VCC = 300V IB1 = 9 A
= 10 Ω Tj = 100 oC
R
C
VCC = 300V IB1 = 9 A
= 10 Ω Tj = 100 oC
R
C
125 250 A/µs
0.7
1.35
1.12
1.1
0.9
2
1.5
1.5
4.4 8 V
2.3 4 V
mA
mA
mA
mA
V
V
V
V
INDUCTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
t
V
CEW
* Pulsed : Pulse duration = 300 ms, duty cycle = 2%
Storage Time
s
Fall Time
t
f
Crossover Time
c
Maximum Collector
Emitter Voltage
without Snubber
VCC = 50 V V
IC = 30 A IB1 = 6 A
V
BB
R
BB
VCC = 50 V I
VBB = -5 V IB1 = 6 A
L
C
T
= 125 oC
j
2/4
= 450 V
Clamp
= -5 V LC = 80 µH
= 0.4 Ω Tj = 100 oC
= 45 A
CWoff
= 55 µH RBB = 0.4 Ω
450 V
2.75
0.12
0.44
4.5
0.4
0.7
µs
µs
µs
Page 3
P003O
TO-3 (version S) MECHANICAL DATA
BUX348
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 1.47 1.60 0.058 0.063
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
mm inch
P
A
G
U
V
N
O
B
D
C
E
R
3/4
Page 4
BUX348
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectro nics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
4/4
Loading...