Datasheet BUW13F, BUW13AF Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BUW13F; BUW13AF

Silicon diffused power transistors

Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06

1997 Aug 13

Philips Semiconductors Product specification

Silicon diffused power transistors BUW13F; BUW13AF

DESCRIPTION

High-voltage, high-speed,

ok, halfpage

glass-passivated NPN power
transistor in a SOT199 package.

APPLICATIONS

• Converters

handbook, halfpage

2

• Inverters

• Switching regulators

• Motor control systems.

1

MBB008

3

PINNING

PIN DESCRIPTION

1 base
2 collector

123

Front view

MSB012

3 emitter

mb mounting base;

Fig.1 Simplified outline (SOT199) and symbol.

electrically isolated

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

CESM

collector-emitter peak voltage VBE=0

BUW13F 850 V
BUW13AF 1000 V

V

CEO

collector-emitter voltage open base

BUW13F 400 V

BUW13AF 450 V
V
I

Csat

CEsat

collector-emitter saturation voltage see Figs 8 and 10 1.5 V
collector saturation current

BUW13F 10 A

BUW13AF 8 A
I
I
P
t

C
CM

tot

f

collector current (DC) see Figs 3 and 4 15 A
collector current (peak value) tp< 20 ms; see Fig 4 30 A
total power dissipation Th≤ 25 °C; see Fig.2 37 W
fall time resistive load; see Fig.13 0.8 µs

1997 Aug 13 2

Philips Semiconductors Product specification

Silicon diffused power transistors BUW13F; BUW13AF

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-h

R

th j-a

Notes

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

2. Mounted with heatsink compound and 30 ±5 N force on centre of package.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CESM

V

CEO

I

Csat

I

C

I

CM

I

B

I

BM

P

tot

T

stg

T

j

thermal resistance from junction to external heatsink note 1 3.4 K/W

note 2 2.5 K/W

thermal resistance from junction to ambient 35 K/W

collector-emitter peak voltage VBE=0

BUW13F − 850 V
BUW13AF − 1000 V

collector-emitter voltage open base

BUW13F − 400 V
BUW13AF − 450 V

collector saturation current

BUW13F − 10 A

BUW13AF − 8A
collector current (DC) see Figs 3 and 4 − 15 A
collector current (peak value) tp< 20 ms; see Fig 4 − 30 A
base current (DC) − 6A
base current (peak value) tp= −20 ms − 9A
total power dissipation Th≤ 25 °C; see Fig.2; note 1 − 37 W

T

≤ 25 °C; see Fig.2; note 2 − 50 W

h

storage temperature −65 +150 °C
junction temperature − 150 °C

Notes

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

2. Mounted with heatsink compound and 30 ±5 N force on centre of package.

ISOLATION CHARACTERISTICS

SYMBOL PARAMETER MAX. UNIT

V
C

isolM
isol

isolation voltage from all terminals to external heatsink (peak value); note 1 2000 V
isolation capacitance from collector to external heatsink 21 pF

Note

1. Repetitive peak operation with RH ≤ 65% under clean and dust-free conditions.

1997 Aug 13 3

Philips Semiconductors Product specification

Silicon diffused power transistors BUW13F; BUW13AF

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CEOsust

V

CEsat

V

BEsat

I

Csat

I

CES

I

EBO

h

FE

collector-emitter sustaining voltage IC= 100 mA; I

BUW13F 400 −−V

L = 25 mH; see Figs 6 and 7

BUW13AF 450 −−V
collector-emitter saturation voltage

BUW13F I

= 10 A; IB= 2 A; see

C

Figs 8 and 10

BUW13AF I

= 8 A; IB= 1.6 A; see

C

Figs 8 and 10

base-emitter saturation voltage

BUW13F I

BUW13AF I

= 10 A; IB= 2 A; see Fig.8 −−1.6 V

C

= 8 A; IB= 1.6 A;

C

see Fig.8

collector saturation current VCE= 1.5 V

BUW13F −−10 A

BUW13AF −−8A
collector-emitter cut-off current VCE=V

CESMmax

note 1
V

CE=VCESMmax

Tj= 125 °C; note 1
emitter-base cut-off current VEB=9V; IC=0 −−10 mA
DC current gain VCE=5V; IC= 20 mA;

see Fig.11

V

=5V; IC= 1.5 A;

CE

see Fig.11

=0;

Boff

; VBE=0;

; VBE=0;

−−1.5 V

−−1.5 V

−−1.6 V

−−1mA

−−4mA

10 18 35

10 20 35

Switching times resistive load (see Figs 12 and 13)
t

on

t

s

t

f

turn-on time

BUW13F I
BUW13AF I

storage time

BUW13F I
BUW13AF I

fall time

BUW13F I
BUW13AF I

Con
Con

Con
Con

Con
Con

= 10 A; I
= 8 A; I

= 10 A; I
= 8 A; I

= 10 A; I

= 8 A; I
Switching times inductive load (see Figs 14 and 15)
t

s

storage time

BUW13F I

= 10 A; IB=2A;

Con

VCL= 250 V; Tc= 100 °C

BUW13AF I

= 8 A; IB= 1.6 A;

Con

VCL= 300 V; Tc= 100 °C

1997 Aug 13 4

Bon=IBoff

Bon=IBoff

Bon=IBoff

Bon=IBoff

Bon=IBoff

Bon=IBoff

=2A −−1µs

= 1.6 A −−1µs

=2A −−4µs

= 1.6 A −−4µs

=2A −−0.8 µs

= 1.6 A −−0.8 µs

− 2.8 3.5 µs

− 2.8 3.5 µs

Philips Semiconductors Product specification

Silicon diffused power transistors BUW13F; BUW13AF

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

t

f

Note

1. Measured with a half-sinewave voltage (curve tracer).

fall time

BUW13F I

BUW13AF I

= 10 A; IB=2A;

Con

VCL= 250 V; Tc= 100 °C

= 8 A; IB= 1.6 A;

Con

VCL= 300 V; Tc= 100 °C

− 200 300 ns

− 200 300 ns

120

handbook, halfpage

P

tot max

(%)

80

40

0

050

100 150

T

h

Fig.2 Power derating curve.

o

(

MGK674

C)

20

handbook, halfpage

I

C

(A)

10

0

0 400

Tc≤ 100°C; VBE= −1to−5V.

Fig.3 Reverse bias SOAR.

800

MGB896

BUW13F
BUW13AF

VCE (V)

1200

1997 Aug 13 5

Philips Semiconductors Product specification

Silicon diffused power transistors BUW13F; BUW13AF

handbook, full pagewidth

10

10

(A)

2

10

I

CM max

I

C

I

C max

10

δ = 0.01

tp =

20 µs

MGB929

50 µs

II

100 µs

1

200 µs

500 µs

1 ms

−1

I

2 ms
5 ms

10 ms
20 ms

DC

−2

BUW13F

−3

10

−4

10

110

10

BUW13AF

Tmb=25°C.
I -Region of permissible DC operation.
II -Permissible extension for repetitive pulse operation.
(1) P

tot max

and P

tot peak max

lines.

(2) Second breakdown limits (independent of temperature).

Fig.4 Forward bias SOAR.

1997 Aug 13 6

2

3

10

VCE (V)

4

10

Philips Semiconductors Product specification

Silicon diffused power transistors BUW13F; BUW13AF

10

handbook, full pagewidth

Z

th j−mb
(K/W)

δ = 1

1

0.75

0.50

0.33

0.20

0.10

−1

10

0.05

0.02

0.01

−2

10

0

−3

10

−4

10

MGB866

−3

10

−2

10

−1

10

110

10

tp (s)

2

Fig.5 Transient thermal impedance.

ndbook, halfpage

30 to 60 Hz

6 V

300 Ω

100 to 200 Ω

L

oscilloscope

1 Ω

+ 50 V

horizontal

vertical

MGE252

Fig.6 Test circuit for collector-emitter

sustaining voltage.

1997 Aug 13 7

I

handbook, halfpage

C

(mA)

250
200

100

0

min

V

CEOsust

Fig.7 Oscilloscope display for collector-emitter

sustaining voltage.

MGE239

VCE (V)

Philips Semiconductors Product specification

Silicon diffused power transistors BUW13F; BUW13AF

2.0

handbook, full pagewidth

V

BEsat

V

CEsat

(V)

1.5

1.0
(1)

(2)

0.5

(3)

0

−1

10

IC/IB=5.
(1) VBE; Tj=25°C.

(2) VBE; Tj= 100 °C.
(3) VCE; Tj= 100 °C.

(4)

110

(4) VCE; Tj=25°C.

I

(A)

C

Fig.8 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.

MGB915

2

10

1.6

handbook, full pagewidth

V

BE

(V)

1.4

1.2

1.0

0.8

0

Tj=25°C.
(1) IC=15A.

(1)

(2)

(3)

421 53

(2) IC=10A.
(3) IC=5A.

Fig.9 Base-emitter voltage as a function of base current; typical values.

IB (A)

MGB912

6

1997 Aug 13 8

Philips Semiconductors Product specification

Silicon diffused power transistors BUW13F; BUW13AF

10

handbook, halfpage

(1) (2) (3)

V

CEsat

(V)

1

−1

10

−2

10

(1) IC=5A.
(2) IC=10A.
(3) IC=15A.
Tj=25°C; solid line: typical values; dotted line: maximum values.

−1

10

1

MGB871

IB (A)

Fig.10 Collector-emitter saturation voltage as a

function of base current.

2

10

handbook, halfpage

h

FE

10

1

−2

10

10

Tj= 125 °C.

VCE = 5 V

1V

−1

10

11010

MBC098

IC (A)

2

Fig.11 DC current gain; typical values.

handbook, halfpage

V

IM

0

t

p

T

VCC= 250 V; tp=20µs; VIM= −6 to +8 V; tp/T = 0.01.
The values of RB and RL are selected in accordance with I

requirements.

I

Bon

V

CC

R

L

R

B

D.U.T.

Fig.12 Test circuit resistive load.

MGE244

Con

and

handbook, halfpage

90%

I

B

10%

90%

I

C

10%

tr≤ 20 ns.

Fig.13 Switching time waveforms with

tr ≤30 ns

t

on

resistive load.

MBB731

I

B on

t

I

B off

I

C on

t

f

t

s

t

1997 Aug 13 9

Philips Semiconductors Product specification

Silicon diffused power transistors BUW13F; BUW13AF

handbook, halfpage

+I

B

−V

BE

VCL≤ up to 1000 V; VCC= 30 V; VBE= −5 V; LB=1µH;

= 200 µH.

L

C

L

V

CC

L

C

B

D.U.T.

Fig.14 Test circuit inductive load and reverse

bias SOAR.

V

CL

MGE246

handbook, halfpage

90%

I

B

10%

90%

I

C

10%

Fig.15 Switching time waveforms with

t

r

inductive load.

I

B on

t

−I

B off

I

C on

t

f

t

s
t

off

t

MGE238

1997 Aug 13 10

Philips Semiconductors Product specification

Silicon diffused power transistors BUW13F; BUW13AF

PACKAGE OUTLINE

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads (in-line) SOT199

E

E

1

m

P

A

A

1

q

D

L

1

b

1

L

1

23

e

b

e

1

w M

Q

α

c

0 5 10 mm

scale

DIMENSIONS (mm are the original dimensions)

A

A

b

b

UNIT

mm

Note

1. Terminals in this zone are not tinned.

OUTLINE
VERSION

SOT199 97-06-27

5.2

4.8

3.4

3.0

1

1.2

1.0

c

1

2.1

0.6

1.9

0.5

IEC JEDEC EIAJ

D

21.5

20.5

E

15.3

14.7

e

E

1

7.8

5.45

6.8

REFERENCES

e

10.9

1

1997 Aug 13 11

16.5

15.7

(1)

m

L

1

0.8

3.7

3.3

0.6

3.3

3.1

2.1

1.9

qQPL

w

6.2

0.4

5.8

EUROPEAN

PROJECTION

α

45°

ISSUE DATE

Philips Semiconductors Product specification

Silicon diffused power transistors BUW13F; BUW13AF

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Aug 13 12

Philips Semiconductors Product specification

Silicon diffused power transistors BUW13F; BUW13AF

NOTES

1997 Aug 13 13

Philips Semiconductors Product specification

Silicon diffused power transistors BUW13F; BUW13AF

NOTES

1997 Aug 13 14

Philips Semiconductors Product specification

Silicon diffused power transistors BUW13F; BUW13AF

NOTES

1997 Aug 13 15

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© Philips Electronics N.V. 1997 SCA55
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Printed in The Netherlands 137067/00/01/pp16 Date of release: 1997Aug 13 Document order number: 9397 750 02721