Page 1
®
HIGH VOLTAGE FAST-SWITCHING
■
STMicroelectronics PREFERRED
SALESTYPE
■
HIGH VOLTAGE CA PA BILIT Y (> 1500 V)
■
VERY HIGH SWITCHING SPEED
APPLICATIONS:
■
HORIZONTAL DEFLECTION FOR HIGH-END
COLOUR TV AND 21" MONITORS
DESCRIPTION
The BUW1215 is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
BUW1215
NPN POWER TRANSISTOR
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Base Voltage (IE = 0) 1500 V
CBO
Collector-Emitter Voltage (IB = 0) 700 V
CEO
Emitter-Base Voltage (IC = 0) 10 V
EBO
Collector Current 16 A
I
C
Collector Peak Current (tp < 5 ms) 22 A
CM
Base Current 9 A
I
B
Base Peak Current (tp < 5 ms) 12 A
BM
Total Dissipation at Tc = 25 oC200W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
February 2002
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BUW1215
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.63
o
C/W
ELECTRICAL CHARACT ER ISTI CS
= 25 oC unless otherwise specified)
(T
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 1500 V
V
CE
V
= 1500 V Tj = 125 oC
CE
= 5 V 100 µA
V
EB
I
= 100 mA 700 V
C
0.2
2
Sustaining Voltage
(I
= 0)
B
V
EBO
Emitter-Base Voltage
(I
V
∗ Collector-Emitter
CE(sat)
= 0)
C
= 10 mA 10 V
I
E
= 12 A IB = 2.4 A 1.5 V
I
C
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
= 12 A IB = 2.4 A 1.5 V
I
C
Saturation Voltage
h
∗ DC Current Gain I
FE
RESISTIVE LOAD
s
t
f
Storage Time
Fall Time
t
INDUCTIVE LOAD
t
s
t
f
Storage Time
Fall Time
= 12 A VCE = 5 V
C
I
= 12 A VCE = 5 V Tj = 100 oC
C
V
= 400 V IC = 12 A
CC
I
= 2 A I
B1
I
= 12 A f = 31250 Hz
C
I
= 2 A I
B1
V
ceflyback
= 1050 sin
= -6 A 1.5
B2
= -1.5 A
B2
π
6
10
t V
5
7
10 14
5
110
4
220
mA
mA
µs
ns
µs
ns
INDUCTIVE LOAD
s
t
f
Storage Time
Fall Time
t
IC = 6 A f = 64 KHz
I
= 1 A V
B1
V
ceflyback
= 1200 sin
BE(off)
π
5
= -2 A
10
6
t V
* Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area Thermal Impedance
2/7
3.5
180
µs
ns
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BUW1215
Derating Curve
Collector Emitter Saturation Voltage
DC Current Gain
Base Emitter Saturation Voltage
Power Losses at 64 KHz
Switching Time Inductive Load at 64 KHz
(see figure 2)
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Page 4
BUW1215
Reverse Biased SOA
BASE DRIVE INFORMATION
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
I
has to be provided for the lowest gain hFE at
B1
o
C (line scan phase). On the other hand,
100
negative base current I
must be provided the
B2
transistor to turn off (retrace phase).
Most of the dissipation, especially in the deflection
application, occurs at switch-off so it is essential
to determine the value of I
power losses, fall time t
and, consequently, Tj. A
f
which minimizes
B2
new set of curves have been defined to give total
power losses, t
and tf as a function of IB1 at 64
s
KHz scanning frequencies for choosing the
optimum negative drive. The test circuit is
illustrated in figure 1.
The values of L and C are calculated from the
following equations:
1
L
(
2
ω =
2
Where IC = operating collector current, V
1
2
)
I
=
C
π
f
=
C
2
1
L
√
(
C
V
CEfly
2
)
CEfly
flyback voltage, f= frequency of oscillation during
retrace.
=
4/7
Page 5
BUW1215
Figure 1:
Figure 2:
Inductive Load Switching Test Circuit.
Switching Waveforms in a Deflection Circuit
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BUW1215
TO-247 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
mm inch
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P025P
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BUW1215
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any in fringe ment o f patents or other rig hts of third par ties wh ich may result from its u se. N o li cen se is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized f or use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectro nics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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