Page 1
NPN TRANSISTOR POWER MODULE
■ HIGH CURRENTPOWER BIPOLAR MODULE
■ VERY LOW R
■ SPECIFIEDACCIDENTAL OVERLOAD
AREAS
■ ISOLATEDCASE (2500V RMS)
■ EASY TO MOUNT
■ LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIALAPPLICATIONS:
■ MOTOR CONTROL
■ SMPS & UPS
■ WELDING EQUIPMENT
JUNCTION CASE
th
BUV98AV
Pin 4 not connected
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
CEO(sus)
V
I
I
P
T
V
Collector-Emitter Voltage (VBE= -5 V) 1000 V
CEV
Collector-Emitter Voltage (IB= 0) 450 V
Emitter-Base Voltage (IC=0) 7 V
EBO
Collector Current 30 A
I
C
Collector Peak Current (tp=10ms) 60 A
CM
Base Current 8 A
I
B
Base Peak Current(tp=10ms) 16 A
BM
Tota l Dissipat io n at Tc=25oC 150 W
tot
Storage Temperature -55 to 150
stg
Max. Ope ratingJunct ion Temperature 150
T
j
Insulation Withstand Voltage (AC-RMS) 2500
ISO
o
C
o
C
o
C
September1997
1/7
Page 2
BUV98AV
THERMAL DATA
R
thj-case
R
thc-h
Thermal Resistance Junction-case Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied Max
0.83
0.05
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEV
I
EBO
V
CEO(SUS)
h
FE
V
CE(sat)
V
BE(sat)
Collector Cut-off
Curren t (R
BE
=5Ω)
Collector Cut-off
Curren t (V
BE
=-5V)
Emitter Cut-off Current
(I
=0)
C
* Co lle ctor- Em it t e r
Sustaining Voltage
V
CE=VCEV
VCE=V
V
CE=VCEV
VCE=V
=5V 2 mA
V
EB
IC=0.2A L=25mH
V
= 450 V
clamp
CEV
CEV
Tj= 100oC
Tj= 100oC
450 V
∗ DC Current Gain IC=24A VCE=5V 9
∗ Collector-Emitter
Saturation Voltage
∗ Ba se -Emit ter
IC=16A IB= 3.2 A
I
=24A IB=5A
C
IC=16A IB= 3.2 A 1.6 V
1
8
0.4
4
1.5
5
Saturation Voltage
/dt RateofRiseof
di
C
On-state Collector
(3 µs) Collector-Emitter
V
CE
Dynamic Voltage
(5 µs) Collector-Emitter
V
CE
Dynamic Voltage
t
V
CEW
Storage Time
s
Fall Time
t
f
Maximum Co lle ctor
Emitter Voltage
Withou t Snubber
∗ Pulsed:Pulseduration = 300 µs,duty cycle 1.5 %
VCC=300V RC=0 tp=3µs
I
=6A Tj= 100oC
B1
VCC= 300 V RC=15Ω
I
=6A Tj=100oC
B1
VCC= 300 V RC=15Ω
I
=6A Tj=100oC
B1
IC=16A VCC=50V
V
=-5V LB=1.5µH
BB
V
= 300 V IB1=3.2A
clamp
L = 750 µHT
I
=30A IB1=6A
CWo f f
V
=-5V VCC=50V
BB
L = 750 µHL
T
=125oC
j
= 100oC
j
=15µH
B
100 A/µs
8V
4V
5
0.4
350 V
mA
mA
mA
mA
V
V
µs
µs
2/7
Page 3
BUV98AV
Safe OperatingAreas
Derating Curve
Thermal Impedance
Collector-emitter Voltage Versus
base-emitterResistance
CollectorEmitter Saturation Voltage
Base-Emitter Saturation Voltage
3/7
Page 4
BUV98AV
ReverseBiased SOA
ReverseBiased AOA
FowardBiased SOA
ForwardBiased AOA
Switching Times Inductive Load
4/7
SwitchingTimes Inductive Load Versus
Temperature
Page 5
Dc Current Gain Turn-onSwitching Test Circuit
(1) Fast electronics switch (2) Non-inductiveload
Turn-onSwitching Waveforms
BUV98AV
Turn-offSwitching Test Circuit
(1) Fast electronic switch (2) Non-inductiveload
(3) Fast recovery rectifier
Turn-offSwitching Waveforms
5/7
Page 6
BUV98AV
ISOTOPMECHANICALDATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.8 12.2 0.466 0.480
B 8.9 9.1 0.350 0.358
C 1.95 2.05 0.076 0.080
D 0.75 0.85 0.029 0.033
E 12.6 12.8 0.496 0.503
F 25.15 25.5 0.990 1.003
G 31.5 31.7 1.240 1.248
H 4 0.157
J 4.1 4.3 0.161 0.169
K 14.9 15.1 0.586 0.594
L 30.1 30.3 1.185 1.193
M 37.8 38.2 1.488 1.503
N 4 0.157
O 7.8 8.2 0.307 0.322
mm inch
G
A
B
O
N
D
E
F
H
J
C
K
L
M
6/7
Page 7
BUV98AV
Informationfurnished is believed to be accurateand reliable. However, SGS-THOMSON Microelectronicsassumes no responsabilityfor the
consequencesof use of such information nor for any infringementof patents or other rightsof third parties which may results fromits use. No
license is grantedby implicationor otherwiseunder any patentor patentrights of SGS-THOMSON Microelectronics.Specifications mentioned
in thispublication are subjectto change withoutnotice. This publicationsupersedesand replacesall informationpreviously supplied.
SGS-THOMSON Microelectronicsproductsarenotauthorizedforuseas critical componentsinlife support devicesorsystems withoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics - Printed in Italy - All RightsReserved
Australia- Brazil - Canada - China - France- Germany- Hong Kong - Italy - Japan- Korea -Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain- Sweden- Switzerland- Taiwan -Thailand - UnitedKingdom - U.S.A
SGS-THOMSONMicroelectronicsGROUP OF COMPANIES
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