The BUX48C,BUV48Cand BUV48CFI are silicon
Multiepitaxial Mesa NPN transistors mounted
respectively in TO-3 metal case, TO-218 plastic
packageandISOWATT218fullyisolated
package. They are particulary intended for
switching and industrial applications from single
and tree-phasemains.
BUV48CFI
NPN POWER TRANSISTORS
1
2
TO-3
1
TO-218
3
2
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
3
2
1
For T O -3 Pa c kageOther s P ac kages
ABSOLUTE MAXIMUM RATINGS
Symb o lParameterVal u eUni t
V
V
V
V
I
I
I
P
T
January 2000
Collector-E mit t e r Voltage (RBE=10Ω)
CER
Collector-E mit t e r Voltage ( VBE=0)
CES
CEOCollector-E mit t e r Voltage ( I
Emitter-Bas e Volt age (IC=0)
EBO
I
Collector Cur re nt
C
Collector P e ak Cu rr ent (tp<5ms)
CM
CPCollector P e ak Cu rr ent non repet itive (t
I
Base Current
B
Base P eak Curr ent (t p <5ms)
BM
Total Dissipation at Tc=25oC
tot
Storage Tem perature
stg
T
Max. Operat ing Junct ion Tem pe rat ure
j
B
=0)
<20µs)
p
TO-3TO-218ISOWATT 218
17512555W
-65 to 200 -65 to 150-65 t o 150
200150150
1200V
1200V
700V
7V
15A
30A
55A
4A
20A
o
C
o
C
1/6
Page 2
BUX48C/BUV48C/BUV48CFI
THERMAL DATA
R
thj-case T hermal Resis tance Junction- caseMax
TO -3TO - 218ISO WATT218
11 2.2
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symb o lParameterTest C o n ditio nsMi n.Typ.Max.Unit
I
CER
I
CES
I
CEO
I
EBO
V
CEO(SUS)
V
CER(SUS)
V
CE(sat)
Collec t or Cut -of f Current
=10Ω)
(R
BE
Collec t or Cut -of f Current
=0)
(V
BE
Collec t or Cut -of f Current
=0)
(I
B
Emit ter Cut- off C urr ent
=0)
(I
C
∗
Collector-Emit ter Sustaining
Voltage (I
∗
Collector-Emit ter Sustaining
Voltage (R
∗
Collec t or -Emitt er Saturation
B
BE
=0)
=10Ω)
Voltage
V
BE(sat)
∗
Base-Emitt er Sat uration
Voltage
∗
Pulsed: Pulse duration = 300 µs, duty cycle1.5 %
V
= 1200 V
CE
= 1200 VT
V
CE
V
= 1200 V
CE
= 1200 VT
V
CE
V
CE=VCEO
V
=6V
EB
I
=100mA
C
I
=0.5AV
C
clamp
L=2mH
=6AIB=1.5A
I
C
=10A IB=4A
I
C
=6AIB=1.5A
I
C
I
=10A IB=4A
C
= 125oC
case
= 125oC
case
= 1200 V
700V
1200V
500
4
500
3
1mA
1mA
1.5
3
1.5
2
RESISTIVESWITCHINGTIMES
Symb o lParamet erTest C o n ditio nsMi n.Typ.Max.Un it
t
t
on
s
t
f
Turn-on T ime
St orage Tim e
Fall Time
= 250 VIC=6A
V
CC
I
=-IB2=1.5A
B1
0.51µs
1.53µs
0.20.7µs
µA
mA
µA
mA
V
V
V
V
INDUCTIVE SWITCHINGTIMES
Symb o lParamet erTest C o n ditio nsMi n.Ty p .Max.Un i t
- MaximumTorque (applied to mountingflange) Recommended: 0.8 Nm; Maximum:1 Nm
- Theside of thedissipator must beflatwithin 80 µm
P025C/A
5/6
Page 6
BUX48C/BUV48C/BUV48CFI
Information furnished isbelieved tobeaccurate andreliable. However, STMicroelectronics assumes noresponsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise underany patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces allinformation previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronicsGROUP OF COMPANIES
Australia - Brazil - China - Finland- France - Germany- Hong Kong - India- Italy- Japan -Malaysia - Malta - Morocco -
Singapore- Spain - Sweden - Switzerland -United Kingdom -U.S.A.
http://www.st.com
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