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BUV46
®
BUV46A
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
■ STMicroelectronics P REF ERRED
SALESTYPES
■ NPN TRANSISTORS
■ HIGH VOLTAGE CAPABILITY
■ MINIMUM LO T- TO - LOT SPRE AD F O R
RELIAB LE OPERATI O N
■ FAST SWITCHING SPEED
APPLICATIONS
■ GENERAL PURPOSE SWITCHING
■ SWITCH MODE POWER SUPPLIES
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The devices are silicon Multiepitaxial Mesa NPN
transistors in the Jedec TO-220 plastic package
intended for high voltage, fast switching
applications.
TO-220
INTER NAL SCH E M ATI C DIAG RA M
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BUV46 BUV46A
V
V
V
V
P
T
January 1999
Collector-Emitter Voltage (VBE = 0) 850 1000 V
CES
Collector-Emitter Voltage (V
CEX
Collector-Emitter Voltage (IB = 0) 400 450 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
I
Collector Current 5 A
C
Base Current 3 A
I
B
Total Dissipation at Tc = 25 oC70W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
= -2.5V) 850 1000 V
BE
o
C
o
C
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BUV46 / BUV46A
THERMAL DATA
R
thj-case
Thermal Resistance Junction-Case Max 1.76
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEX
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut-off
Current (R
= 10Ω)
BE
Collector Cut-off
Current
Emitter Cut-off
Current (I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
∗ Collector-Emitter
Saturation Voltage
V
= V
CE
VCE = V
VCE = V
V
V
IC = 100 mA for BUV46
for BUV46A
CEX
TC = 125 oC
CEX
CEX
= V
CE
CEX VBE
= 7 V 1 mA
BE
V
= -2.5 V TC = 125 oC
= -2.5 V
BE
400
450
0.1
1
0.3
2
for BUV46
I
= 2.5 A IB = 0.5 A
C
I
= 3.5 A IB = 0.7 A
C
1.5
5
for BUV46A
I
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
= 2 A IB = 0.4 A
C
I
= 3 A IB = 0.6 A
C
for BUV46
I
= 2.5 A IB = 0.5 A
C
1.5
5
1.3
for BUV46A
I
RESISTIVE LOAD
t
t
on
s
t
f
Turn-on Time
Storage Time
Fall Time
RESISTIVE LOAD
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
on
s
t
f
Turn-on Time
Storage Time
Fall Time
for BUV46
I
I
for BUV46A
I
I
= 2 A IB = 0.4 A
C
= 2.5 A VCC = 150 V
C
= - IB2 = 0.5 A
B1
= 2 A VCC = 150 V
C
= - IB2 = 0.4 A
B1
1.3
1
3
0.8
1
3
0.8
mA
mA
mA
V
V
V
V
V
V
V
V
µs
µs
µs
µs
µs
µs
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Page 3
TO-220 MECHANICAL DATA
BUV46 / BUV46A
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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BUV46 / BUV46A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelectro nics – Printed in Italy – All Rights Reserved
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