Page 1
NPN TRANSISTOR POWER MODULE
■ NPNTRANSISTOR
■ HIGH CURRENTPOWERBIPOLARMODULE
■ VERYLOW R
■ SPECIFIEDACCIDENTAL OVERLOAD
AREAS
■ ISOLATEDCASE (2500VRMS)
■ EASY TO MOUNT
■ LOW INTERNALPARASITIC INDUCTANCE
JUNCTION CASE
th
BUV298V
APPLICATIONS:
■ MOTORCONTROL
■ SMPS& UPS
■ WELDINGEQUIPMENT
Pin 4 not connected
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
CEO(sus)
V
I
I
P
T
V
Collector-Emitter Voltage (VBE= -5 V) 1000 V
CEV
Collector-Emitter Voltage (IB= 0) 450 V
Emitter-Base Voltage (IC=0) 7 V
EBO
Collect or Current 50 A
I
C
Collect or Peak Current (tp=10ms) 75 A
CM
Base Current 10 A
I
B
Base Peak Current (tp=10ms) 16 A
BM
Total Dissipat ion at Tc=25oC 250 W
tot
Stora ge T emperature -55 to 150
stg
Max. Oper at i ng Junction Temperature 150
T
j
Insul at ion Withst and Voltage (A C-RMS) 2500 V
ISO
o
C
o
C
June 1997
1/7
Page 2
BUV298V
THERMAL DATA
R
thj-case
R
thc-h
Ther mal Resistance Junct ion- c ase Max
Ther mal Resistance Case-heatsink With C onductive
Gr ease Applied Max
0.5
0.05
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CER
I
CEV
I
EBO
V
CEO(SUS)
Collector C ut -off
Current (R
BE
=5Ω)
Collector C ut -off
Current (V
BE
=-5V)
Emit ter Cut-of f C urr ent
=0)
(I
C
* Collector-Emitter
Sust aining V oltage
∗ DC Cur rent Gain IC=32A VCE=5V 12
h
FE
V
∗ Co llector-Em it t er
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
di
/dt Rate of Rise of
C
On-stat e Collector
(3 µs)•• Collector-Emitter
V
CE
Dynamic Volt age
V
(5 µs)••Collector-Em itter
CE
Dynamic Volt age
V
t
t
CEW
St orage Time
s
t
Fall T ime
f
Cross-over Time
c
Maximum Collector
Emit ter Voltage
Wit hout S nubber
∗
Pulsed: Pulse duration = 300 µs, duty cycle1.5 %
V
CE=VCEV
VCE=V
V
CE=VCEV
VCE=V
V
=5V 2 mA
EB
IC=0.2A L=25mH
= 450 V
V
clamp
IC=32A IB=6.4A
=32A IB=6.4A Tj=100oC
I
C
IC=32A IB=6.4A
=32A IB=6.4A Tj=100oC
I
C
VCC=300V RC=0 tp=3µs
I
=9.6A Tj=100oC
B1
VCC=300V RC=9.3Ω
=9.6A Tj= 100oC
I
B1
VCC=300V RC=9.3Ω
I
=9.6A Tj= 100oC
B1
IC=32A VCC=50V
=-5V RBB=0.39Ω
V
BB
= 450 V IB1=6.4A
V
clamp
L=78µHT
I
=48A IB1=6.4A
CWo f f
=-5V VCC=50V
V
BB
L=52µHR
= 125oC
T
j
CEV
CEV
Tj=100oC
Tj=100oC
=100oC
j
=0.39Ω
BB
450 V
0.35
0.6
1
0.9
160 210 A/µs
4.5 8 V
2.5 4 V
3.2
0.25
0.5
450 V
0.4
2
0.4
2
1.2
2
1.5
1.5
4.5
0.4
0.7
mA
mA
mA
mA
V
V
V
V
µs
µs
µs
2/7
Page 3
BUV298V
Safe Operating Areas
Derating Curve
ThermalImpedance
Collector-emitter Voltage Versus
base-emitterResistance
CollectorEmitter SaturationVoltage
Base-EmitterSaturationVoltage
3/7
Page 4
BUV298V
ReverseBiased SOA
ReverseBiased AOA
FowardBiased SOA
ForwardBiased AOA
SwitchingTimes InductiveLoad
4/7
SwitchingTimes Inductive Load Versus
Temperature
Page 5
DcCurrent Gain Turn-onSwitchingTest Circuit
(1) Fast electronicsswitch (2)Non-inductive load
Turn-onSwitching Waveforms
BUV298V
Turn-offSwitching Test Circuit
(1) Fast electronic switch (2)Non-inductiveload
(3) Fast recoveryrectifier
Turn-offSwitchingWaveforms
5/7
Page 6
BUV298V
ISOTOPMECHANICALDATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.8 12.2 0.466 0.480
B 8.9 9.1 0.350 0.358
C 1.95 2.05 0.076 0.080
D 0.75 0.85 0.029 0.033
E 12.6 12.8 0.496 0.503
F 25.15 25.5 0.990 1.003
G 31.5 31.7 1.240 1.248
H 4 0.157
J 4.1 4.3 0.161 0.169
K 14.9 15.1 0.586 0.594
L 30.1 30.3 1.185 1.193
M 37.8 38.2 1.488 1.503
N 4 0.157
O 7.8 8.2 0.307 0.322
mm inch
G
A
B
O
N
D
E
F
H
J
C
K
L
M
6/7
Page 7
BUV298V
Informationfurnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such information nor for any infringementof patents or other rights of third partieswhich may results from its use.No
license is granted by implicationor otherwise under anypatentor patentrights of SGS-THOMSONMicroelectronics.Specificationsmentioned
in thispublicationare subject tochange without notice.This publicationsupersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedfor useas critical componentsin lifesupportdevices or systemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia- Brazil - Canada- China- France - Germany- Hong Kong - Italy- Japan- Korea - Malaysia -Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland- Taiwan - Thailand - United Kingdom- U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
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