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MEDIUM POWER NPN SILICON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ FAST SWITCHING SPEED
■ LOW COLLECTOR EMITTER SATURATION
APPLICATIONS
■ SWITCHING REGULATOR S
■ MOTOR CONTROL
DESCRIPTION
The BUV26 is a Multiepitaxial Planar NPN
Transistor in TO-220 package. It is intended for
use in high frequency and efficency converters,
switching regulators and motor control.
TO-220
BUV26
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
P
T
Collector-base Voltage (IE = 0) 180 V
CBO
Collector-Emitter Voltage (IB = 0) 90 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Emitter Current 14 A
I
C
Collector Peak Current (tp <10ms) 25 A
CM
Base Current 4 A
I
B
Base Peak Current (tp <10ms) 6 A
BM
Total Dissipation at Tc < 25 oC85W
tot
Total Dissipation at Tc < 60 oC65W
tot
Storage Temperature -65 to +175
stg
Max. Operating Junction Temperature 175
T
j
o
C
o
C
June 1997
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BUV26
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.76
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEX
Collector Cut-off
Current (R
= 50Ω)
BE
Collector Cut-off
= 180V T
V
CE
VCE = 180V
= 125oC
c
= -1.5V Tc = 125oC1mA
VBE
3mA
Current
I
EBO
V
CEO(sus)
V
EBO
V
CE(sat)
V
BE(sat)
Emitter Cut-off
Current (I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
Emitter-Base
Voltage (I
= 0)
C
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
= 5 V 1 mA
V
EB
IC = 0.2 A
90 V
L = 25mH
= 50mA 7 30 V
I
E
IC = 6A IB = 0.6A
I
= 12A IB = 1.2A
C
0.6
1.5
IC =12A IB = 1.2A 2 V
Saturation Voltage
RESISTIVE LOAD
on
s
t
f
Turn-on Time
Storage Time
Fall Time
t
t
V
= 50V IC =12A
CC
V
= - 6V IB1 = 1.2A
BE
R
= 2.5Ω
BB
0.4
0.45
0.12
0.6
1
0.25
INDUCTIVE LOAD
t
t
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
s
t
f
s
t
f
Storage time
Fall Time
Storage Time
Fall Time
V
= 50V IC = 12A
CC
V
= - 5V IB1 = 1.2A
BE
L
= - 0.5µH
B
V
= 50V IC = 12 A
CC
V
= - 5V IB1 = 1.2A
BE
L
= - 0.5µH Tj = 125oC
B
0.5
0.04
2
0.15
V
V
ms
µs
µs
µs
µs
µs
µs
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E
TO-220 MECHANICAL DATA
BUV26
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
A
C
D
D1
L2
F1
L5
Dia.
G1
F
F2
L9
G
H2
L7
L6
L4
P011C
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BUV26
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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