Datasheet BUV22 Datasheet (Motorola)

1

Motorola Bipolar Power Transistor Device Data

 
   

. . . designed for high current, high speed, high power applications.

• High DC current gain: HFE min. = 20 at IC = 10 A

• Low V

CE(sat)

: V

CE(sat)

max. = 1.0 V at IC = 10 A

• Very fast switching times:
TF max. = 0.35 µs at IC = 20 A

MAXIMUM RATINGS

Rating

Symbol

ОООООООО

ОООООООО

ОООООООО

Value

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Unit

Collector–Emitter Voltage

V

CEO(sus)

ОООООООО

ОООООООО

ОООООООО

250

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector–Base Voltage

V

CBO

ОООООООО

ОООООООО

ОООООООО

300

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Emitter–Base Voltage

V

EBO

ОООООООО

ОООООООО

ОООООООО

7

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector–Emitter Voltage (VBE = –1.5 V)

V

CEX

ОООООООО

ОООООООО

ОООООООО

300

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector–Emitter Voltage (RBE = 100 Ω)

V

CER

ОООООООО

ОООООООО

ОООООООО

290

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector–Current— Continuous

— Peak (pw v 10 ms)

I

C

I

CM

ОООООООО

ОООООООО

ОООООООО

40
50

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc
Apk

Base–Current continuous

I

B

ОООООООО

ОООООООО

ОООООООО

8

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

Total Power Dissipation @ TC = 25_C

P

D

ОООООООО

ОООООООО

ОООООООО

250

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Watts

Operating and Storage Junction Temperature Range

TJ, T

stg

ОООООООО

ОООООООО

ОООООООО

–65 to 200

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

ОООООООО

ОООООООО

ОООООООО

Max

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Unit

Thermal Resistance, Junction to Case

θ

JC

ОООООООО

ОООООООО

ОООООООО

0.7

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C/W

Figure 1. Power Derating

1.0

0

TC, TEMPERATURE (

°

C)

40 80 160 200

0.4

0.8

0.6

0.2

120

DERATING FACTOR

SWITCHMODE is a trademark of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by BUV22/D

 Motorola, Inc. 1995



40 AMPERES
NPN SILICON

POWER

METAL TRANSISTOR

250 VOLTS

250 WATTS

CASE 197A–05

TO–204AE

(TO–3)

REV 7

BUV22

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

1

Collector–Emitter Sustaining Voltage

(IC = 200 mA, IB = 0, L = 25 mH)

V

CEO(sus)

250

Vdc

Collector Cutoff Current at Reverse Bias

(VCE = 300 V, VBE = –1.5 V)
(VCE = 300 V, VBE = –1.5 V, TC = 125_C)

I

CEX

3.0

12.0

mAdc

Collector–Emitter Cutoff Current

(VCE = 200 V)

I

CEO

3.0

mAdc

Emitter–Base Reverse Voltage

(IE = 50 mA)

V

EBO

7

V

Emitter–Cutoff Current

(VEB = 5 V)

I

EBO

1.0

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

(VCE = 20 V, t = 1 s)
(VCE = 140 V, t = 1 s)

I

S/b

12

0.15

Adc

ON CHARACTERISTICS

1

DC Current Gain

(IC = 10 A, VCE = 4 V)
(IC = 20 A, VCE = 4 V)

h

FE

20
10

60

Collector–Emitter Saturation Voltage

(IC = 10 A, IB = 1 A)
(IC = 20 A, IB = 2.5 A)

V

CE(sat)

1.0

1.5

Vdc

Base–Emitter Saturation Voltage

(IC = 40 A, IB = 4 A)

V

BE(sat)

1.5

Vdc

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product

(VCE = 15 V, IC = 2 A, f = 4 MHz)

f

T

8.0

MHz

SWITCHING CHARACTERISTICS (Resistive Load)

Turn–on Time

t

on

0.8

µs

Storage Time

(IC = 20 A, IB1 = IB2 = 2.5 A,

V

= 100 V, R

= 5 Ω)

t

s

2.0

Fall Time

VCC = 100 V, RC = 5 Ω)

t

f

0.35

1

Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.

BUV22

3

Motorola Bipolar Power Transistor Device Data

I

C

, COLLECTOR CURRENT (A)

Figure 2. Active Region Safe Operating Area

40

1

VCE, COLLECTOR–EMITTER VOLTAGE (V)

10 250

10

1

0.1

100

There are two limitations on the power handling ability of a
transistor: average junction temperature and second break­down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation
i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate.

The data of Figure 2 is based on TC = 25_C; T

J(pk)

is
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.

At high case temperatures, thermal limitations will reduce
the power that can handled to values less than the limitations
imposed by second breakdown.

Figure 3. “On” Voltages

Figure 4. DC Current Gain

50

0.1
IC, COLLECTOR CURRENT (A)

1 10

40

0

30

20

10

VCE = 5 V

Figure 5. Resistive Switching Performance

3.0

4 8 12 16 24

t, TIME ( s)

µ

2.0

1.0 t

S

0.4

0.3

0.2

20

t

on

t

F

2.0

IC, COLLECTOR CURRENT (A)

1 10

1.6

IC/IB = 8

0.8

1.2

0.4

Figure 6. Switching Times Test Circuit

V, VOLTAGE (V)

IC, COLLECTOR CURRENT (A)

V

BE

V

CE

0

100

45

35

25

15

5

V

CC

I

B2

I

B1

R

B

R

C

RC – RB: Non inductive resistances

VCC= 100 V

RC= 5

Ω

RB= 2.7

Ω

IB1= I

B2

IC/IB= 8

104

µ

F

BUV22

4

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 197A–05

TO–204AE (TO–3)

ISSUE J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 1.530 REF 38.86 REF
B 0.990 1.050 25.15 26.67
C 0.250 0.335 6.35 8.51
D 0.057 0.063 1.45 1.60
E 0.060 0.070 1.53 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N 0.760 0.830 19.31 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

A
N

E

C

K

–T–

SEATING
PLANE

2 PLD

M

Q

M

0.30 (0.012) Y

M

T

M

Y

M

0.25 (0.010) T

–Q–

–Y–

2

1

L

G

B

V

H

U

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