Datasheet BUV11 Datasheet (Motorola)

1

Motorola Bipolar Power Transistor Device Data

 
   

. . . designed for high current, high speed, high power applications.

• High DC current gain; hFE min. = 20 at IC = 6 A

• Low V

CE(sat)

, V

CE(sat)

max. = 0.6 V at IC = 6 A

• Very fast switching times:
TF max. = 0.8 µs at IC = 12 A

MAXIMUM RATINGS

Rating

Symbol

ОООООООО

ОООООООО

ОООООООО

Value

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Unit

Collector–Emitter Voltage

V

CEO(sus)

ОООООООО

ОООООООО

ОООООООО

200

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector–Base Voltage

V

CBO

ОООООООО

ОООООООО

ОООООООО

250

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Emitter–Base Voltage

V

EBO

ОООООООО

ОООООООО

ОООООООО

7

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector–Emitter Voltage (VBE = –1.5 V)

V

CEX

ОООООООО

ОООООООО

ОООООООО

250

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector–Emitter Voltage (RBE = 100 Ω)

V

CER

ОООООООО

ОООООООО

ОООООООО

240

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector–Current— Continuous

— Peak (pw v 10 ms)

I

C

I

CM

ОООООООО

ОООООООО

ОООООООО

20
25

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc
Apk

Base–Current continuous

I

B

ОООООООО

ОООООООО

ОООООООО

4

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

Total Power Dissipation @ TC = 25_C

P

D

ОООООООО

ОООООООО

ОООООООО

150

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Watts

Operating and Storage Junction Temperature Range

TJ, T

stg

ОООООООО

ОООООООО

ОООООООО

–65 to 200

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

ОООООООО

ОООООООО

ОООООООО

Max

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Unit

Thermal Resistance, Junction to Case

θ

JC

ОООООООО

ОООООООО

ОООООООО

1.17

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C/W

1.0

Figure 1. Power Derating

TC, TEMPERATURE (°C)

0 40 80 120 160 200

0.6

0.4

0.2

0.8

DERATING FACTOR

SWITCHMODE is a trademark of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by BUV11/D

 Motorola, Inc. 1995



CASE 1–07

TO–204AA

(TO–3)

20 AMPERES
NPN SILICON

POWER

METAL TRANSISTOR

200 VOLTS

150 WATTS

REV 7

BUV11

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS

(T

C

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 200 mA, IB = 0, L = 25 mH)

V

CEO(sus)

200

Vdc

Collector Cutoff Current at Reverse Bias

(VCE = 250 V, VBE = –1.5 V)
(VCE = 250 V, VBE = –1.5 V, TC = 125_C)

I

CEX

1.5
6

mAdc

Collector–Emitter Cutoff Current

(VCE = 160 V)

I

CEO

1.5

mAdc

Emitter–Base Reverse Voltage

(IE = 50 mA)

V

EBO

7

V

Emitter–Cutoff Current

(VEB = 5 V)

I

EBO

1.0

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

(VCE = 30 V, t = 1 s)
(VCE = 140 V, t = 1 s)

I

S/b

5.0

0.15

Adc

ON CHARACTERISTICS

1

DC Current Gain

(IC = 6 A, VCE = 2 V)
(IC = 12 A, VCE = 4 V)

h

FE

20
10

60

Collector–Emitter Saturation Voltage

(IC = 6 A, IB = 0.6 A)
(IC = 12 A, IB = 1.5 A)

V

CE(sat)

0.6

1.5

Vdc

Base–Emitter Saturation Voltage

(IC = 12 A, IB = 1.5 A)

V

BE(sat)

1.5

Vdc

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product

(VCE = 15 V, IC = 1 A, f = 4 MHz)

f

T

8.0

MHz

SWITCHING CHARACTERISTICS (Resistive Load)

Turn–on Time

t

on

0.8

µs

Storage Time

(IC = 12 A, IB1 = IB2 = 1.5 A,

V

= 150 V, T

= 12.5 Ω)

t

s

1.8

Fall Time

VCC = 150 V, TC = 12.5 Ω)

t

f

0.4

1

Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.

BUV11

3

Motorola Bipolar Power Transistor Device Data

1

Figure 2. Active Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (V)

10

1

, COLLECTOR CURRENT (A)I

C

20

10 100 200

There are two limitations on the power handling ability of a
transistor: average junction temperature and second break­down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation
i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate.

The data of Figure 2 is based on TC = 25_C; T

J(pk)

is
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.

At high case temperatures, thermal limitations will reduce
the power that can handled to values less than the limitations
imposed by second breakdown.

0.1

Figure 3. “On” Voltages

IC, COLLECTOR CURRENT (A)

1.2

0.8

V, VOLTAGE (V)

2.0

1 10 20

1.6

0.4

0

100

IC/IB = 8

V

CE

V

BE

0.1

Figure 4. DC Current Gain

IC, COLLECTOR CURRENT (A)

60

40

100

1 10 20

80

20

0

100

VCE = 4

0

Figure 5. Switching Times versus

Collector Current

IC, COLLECTOR CURRENT (A)

1.0

0.4

3.0

4 8 12

2.0

0.3

0.2

20

t, TIME ( s)

µ

16

t

S

t

F

t

on

Figure 6. Switching Times Test Circuit

V

CC

I

B2

I

B1

R

B

R

C

RC – RB: Non inductives resistances

VCC= 150 V

RC= 12.5

Ω

RB= 3.3

Ω

IC/IB= 8

IB1= I

B2

BUV11

4

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 1.550 REF 39.37 REF
B ––– 1.050 ––– 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77

G 0.430 BSC 10.92 BSC

H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N ––– 0.830 ––– 21.08

Q 0.151 0.165 3.84 4.19

U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

A

N

E

C

K

–T–

SEATING
PLANE

2 PLD

M

Q

M

0.13 (0.005) Y

M

T

M

Y

M

0.13 (0.005) T

–Q–

–Y–

2

1

U

L

G

B

V

H

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

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BUV11/D

*BUV11/D*

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