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FAST-SWITCHING POWER TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ h
> 10 AT IC =35A
FE
■ HIGH EFFICIENCY S W ITCHI NG
■ VERY LOW SATURATION VOLTAGE
■ RECTANGULAR SAFE OPERATING AREA
■ WIDE ACCIDENTA L OVE RLO AD ARE A
BUT92
APPLICATIONS
■ UNINTERRUPTABLE POW E R SUPP LY
■ SWITCH MODE P OW ER SUP P LIE S
■ MOTOR CONTROL
1
2
TO-3
DESCRIPTION
(version "S")
The BUT92 is a Multiepitaxial Planar NPN
Transistor in TO-3 package. It is intended for use
in high frequency and efficency converters,
switching regulators and motor control.
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE = -1.5 V) 350 V
CEV
Collector-Emitter Voltage (IB = 0) 250 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Emitter Current 50 A
I
E
Emitter Peak Current 75 A
EM
Base Current 10 A
I
B
Base Peak Current 15 A
BM
Total Power Dissipation at T
tot
Storage Temperature -65 to 200
stg
Junction Temperature 200
T
j
≤ 25 oC 250 W
case
o
C
o
C
June 1997
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Page 2
BUT92
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.7
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-off
Current (R
= 10 Ω)
BE
Collector Cut-off
Current
Emitter Cut-off
Current (I
= 0)
C
∗ Collector-Emitter
= V
V
CE
VCE = V
VCE = V
V
V
CEV
Tc = 100 oC
CEV
CEV VBE
= V
CE
CEV VBE
= 7 V 1 mA
EB
= -1.5V
= -1.5V Tc = 100 oC
0.4
4
0.2
2
IC = 0.2 A L = 25 mH 250 V
Sustaining Voltage
V
EB0
Emitter-Base Voltage
IE = 50 mA 7 V
(IC = 0)
V
V
V
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
∗ Base-Emitter
BE(sat)
Saturation Voltage
diC/dt Rated of Rise on-state
Collector Current
∗ Collector-Emitter
CE(3µs)
Dynamic Voltage
∗ Collector-Emitter
CE(5µs)
Dynamic Voltage
IC = 35 A IB = 3.5 A
I
= 35 A IB = 3.5 A Tj = 100 oC
C
IC = 35 A IB = 3.5 A
I
= 35 A IB = 3.5 A Tj = 100 oC
C
VCC = 200V IB1 = 5.25 A RC = 0
t
3µs Tj = 100 oC
p =
VCC = 200V IB1 = 5.25 A
R
= 5.7 Ω Tj = 100 oC
C
VCC = 200V IB1 = 5.25 A
R
= 5.7 Ω Tj = 100 oC
C
0.8
1.25
1.2
1.2
1.2
1.9
1.5
1.5
125 200 A/µs
36V
1.8 3 V
mA
mA
mA
mA
V
V
V
V
INDUCTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
t
Storage Time
s
Fall Time
t
f
Crossover Time
c
V
IC = 35 A IB1 = 3.5 A
V
R
V
CEW
Maximum Collector
Emitter Voltage
without Snubber
V
VBB = -5 V IB1 = 3.5 A
L
C
T
* Pulsed : Pulse duration = 300 µs, duty cycle = 2%
= 200 V V
CC
= -5 V LC = 0.28 mH
BB
= 0.7 Ω Tj = 100 oC
B2
= 50 V I
CC
Clamp
CWoff
= 250 V
= 52 A
= 48 µH RB2 = 0.7 Ω
= 125 oC
j
1.4
0.15
0.3
250 V
3
0.4
0.7
µs
µs
µs
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P003O
TO-3 (version S) MECHANICAL DATA
BUT92
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 1.47 1.60 0.058 0.063
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
mm inch
P
A
G
U
V
N
O
B
D
C
E
R
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BUT92
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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