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HIGH POWER NPN SILICON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ HIGH CURRENT CAPABILITY
■ FAST SWITCHING SPEED
■ HIGH RUGG E DN ES S
■ LOW COLLECTOR EMITTER SATURATION
BUT90
APPLICATIONS
■ UNINTERRUPTABLE PO WE R SUPP LY
■ MOTOR CONTROL
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUT90 is a Multiepitaxial Planar NPN
Transistor in TO-3 package. It is intended for use
in high frequency and efficency converters,
switching regulators and motor control.
ABSOL UT E MAXIMU M RATINGS
1
2
TO-3
(version "S")
INTERNAL SCHEMATIC DIAGRAM
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE = -1.5 V) 200 V
CEV
Collector-Emitter Voltage (IB = 0) 125 V
CEO
Emitter-Base Voltage (IC = 0) 10 V
EBO
Collector Current 50 A
I
C
Collector Peak Current 120 A
CM
Base Current 12 A
I
B
Base Peak Current 32 A
BM
Total Power Dissipation at T
tot
Storage Temperature -65 to 200
stg
Junction Temperature 200
T
j
≤ 25 oC 250 W
case
April 1997
o
C
o
C
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BUT90
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.17
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-off
Current (R
= 10 Ω)
BE
Collector Cut-off
Current
Emitter Cut-off
Current (I
= 0)
C
∗ Collector-Emitter
= V
V
CE
VCE = V
VCE = V
V
V
CEV
Tc = 100 oC
CEV
CEV VBE
= V
CE
CEV VBE
= 7 V 1 mA
EB
= -1.5V
= -1.5V Tc = 100 oC
0.4
4
0.2
2
IC = 0.2 A L = 25 mH 125 V
Sustaining Voltage
V
EB0
Emitter-Base Voltage
IE = 50 mA 10 V
(IC = 0)
V
CE(sat)
V
BE(sat)
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
Saturation Voltage
IC = 35 A IB = 1.75 A
I
= 70 A IB = 7 A Tc = 100 oC
C
I
= 35 A IB = 1.75 A
C
I
= 70 A IB = 7 A Tc = 100 oC
C
IC = 35 A IB = 1.75 A
I
= 70 A IB = 7 A Tc = 100 oC
C
I
= 35 A IB = 1.75 A
C
I
= 70 A IB = 7 A Tc = 100 oC
C
0.55
0.8
0.75
1.2
1
1.45
1
1.65
0.9
0.9
1.2
1.5
1.3
1.8
1.4
2
RESISTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
Rise Time
r
s
t
f
t
r
s
t
f
Storage Time
Fall Time
Rise Time
Storage Time
Fall Time
t
t
V
= 100 V IC = 70 A
CC
I
= - IB2 = 7 A tp = 30 µs
B1
V
= 100 V IC = 70 A
CC
I
= - I
B1
T
c = 100
= 7 A tp = 30 µs
B2
o
C
0.8
0.9
0.2
1.1
1.2
0.3
1.2
1.5
0.4
1.6
2
0.6
mA
mA
mA
mA
V
V
V
V
V
V
V
V
µs
µs
µs
µs
µs
µs
INDUCTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
t
* Pulsed : Pulse duration = 300 µs, duty cycle = 2%
2/4
s
t
f
s
t
f
Storage Time
Fall Time
Storage Time
Fall Time
VCC = 100 V V
Clamp
IC = 70 A IB1 = - I
L
= 70 µH
C
VCC = 100 V V
Clamp
IC = 70 A IB1 = - I
L
= 70 µH Tc = 100 oC
C
= 125 V
= 7 A
B2
= 125 V
= 7 A
B2
1.25
0.1620.3
1.5
0.25
2.2
0.5
ms
µs
µs
µs
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P003O
TO-3 (version S) MECHANICAL DATA
BUT90
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 1.47 1.60 0.058 0.063
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
mm inch
P
A
G
U
V
N
O
B
D
C
E
R
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BUT90
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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