Page 1
NPN TRANSISTOR POWER MODULE
■ HIGH CURRENTPOWER BIPOLAR MODULE
■ VERY LOW R
■ SPECIFIEDACCIDENTAL OVERLOAD
AREAS
■ ISOLATEDCASE (2500V RMS)
■ EASY TO MOUNT
■ LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIALAPPLICATIONS:
■ MOTOR CONTROL
■ SMPS & UPS
■ DC/DC & DC/AC CONVERTERS
JUNCTION CASE
th
BUT232V
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
CEO(sus)
V
I
I
P
T
V
Collector-Emitter Voltage (VBE= -5 V) 400 V
CEV
Collector-Emitter Voltage (IB= 0) 300 V
Emitter-Base Voltage (IC=0) 7 V
EBO
Collector Current 140 A
I
C
Collector Peak Current (tp= 10 ms) 210 A
CM
Base Current 28 A
I
B
Base Peak Current(tp=10ms) 42 A
BM
Tota l Dissipat io n at Tc=25oC 300 W
tot
Storage Temperature -55 to 150
stg
Max. Ope ratingJunct ion Temperature 150
T
j
Insulation Withstand Voltage (AC-RMS) 2500
ISO
o
C
o
C
o
C
September1997
1/7
Page 2
BUT232V
THERMAL DATA
R
thj-case
R
thc-h
Thermal Resistance Junction-case Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied Max
0.41
0.05
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEV
I
EBO
V
CEO(SUS)
h
FE
V
CE(sat)
V
BE(sat)
di
C
(3 µs) Collector-Emitter
V
CE
(5 µs) Collector-Emitter
V
CE
t
t
V
CEW
∗ Pulsed:Pulseduration = 300 µs,duty cycle 1.5 %
Collector Cut-off
Curren t (R
BE
=5Ω)
Collector Cut-off
Curren t (V
BE
= -1.5)
Emitter Cut-off Current
(I
=0)
C
* Co lle ctor- Em it t e r
Sustaining Voltage
V
CE=VCEV
VCE=V
V
CE=VCEV
VCE=V
=5V 1 mA
V
EB
IC=0.2A L=25mH
V
= 300 V
clamp
CEV
CEV
Tj= 100oC
Tj= 100oC
300 V
∗ DC Current Gain IC=70A VCE=5V 17
∗ Collector-Emitter
Saturation Voltage
∗ Ba se -Emit ter
Saturation Voltage
/dt RateofRiseof
On-state Collector
IC=35A IB=1.75A
I
=35A IB= 1.75 A Tj= 100oC
C
I
=70A IB=7A
C
I
=70A IB=7A Tj= 100oC
C
IC=70A IB=7A
I
=70A IB=7A Tj= 100oC
C
VCC=300V RC=0 tp=3µs
I
=10A Tj=100oC
B1
120 190 A/µs
VCC= 200 V RC= 3.25 Ω
Dynamic Voltage
I
=6.4A Tj= 100oC
B1
VCC= 200 V RC= 3.25 Ω
Dynamic Voltage
Storage Time
s
Fall Time
t
f
Cross-over Time
c
Maximum Co lle ctor
Emitter Voltage
Withou t Snubber
I
=6.4A Tj= 100oC
B1
I
=70A VCC= 250 V
C
V
=-5V RBB=0.6Ω
BB
V
= 300 V IB1=7A
clamp
L=0.3mH T
I
= 105 A IB1=7A
CWo f f
V
=-5V VCC=50V
BB
L=42µHR
T
=125oC
j
= 100oC
j
=0.6Ω
BB
300 V
1
5
1
4
0.5
0.7
1.9
0.5
0.9
1.9
1.1
11.3
2.5 4 V
1.4 2.5 V
3
0.25
0.6
5
0.4
0.9
mA
mA
mA
mA
V
V
V
V
V
V
µs
µs
µs
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Page 3
BUT232V
Safe OperatingAreas
Derating Curve
Thermal Impedance
Collector-emitter Voltage Versus
base-emitterResistance
CollectorEmitter Saturation Voltage
Base-Emitter Saturation Voltage
3/7
Page 4
BUT232V
ReverseBiased SOA
ReverseBiased AOA
FowardBiased SOA
ForwardBiased AOA
Switching Times Inductive Load
4/7
SwitchingTimes Inductive Load Versus
Temperature
Page 5
Dc Current Gain Turn-onSwitching Test Circuit
(1) Fast electronics switch (2) Non-inductiveload
Turn-onSwitching Waveforms
BUT232V
Turn-offSwitching Test Circuit
(1) Fast electronic switch (2) Non-inductiveload
(3) Fast recovery rectifier
Turn-offSwitching Waveforms
5/7
Page 6
BUT232V
ISOTOPMECHANICALDATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.8 12.2 0.466 0.480
B 8.9 9.1 0.350 0.358
C 1.95 2.05 0.076 0.080
D 0.75 0.85 0.029 0.033
E 12.6 12.8 0.496 0.503
F 25.15 25.5 0.990 1.003
G 31.5 31.7 1.240 1.248
H 4 0.157
J 4.1 4.3 0.161 0.169
K 14.9 15.1 0.586 0.594
L 30.1 30.3 1.185 1.193
M 37.8 38.2 1.488 1.503
N 4 0.157
O 7.8 8.2 0.307 0.322
mm inch
G
A
B
O
N
D
E
F
H
J
C
K
L
M
6/7
Page 7
BUT232V
Informationfurnished is believed to be accurateand reliable. However, SGS-THOMSON Microelectronicsassumes no responsabilityfor the
consequencesof use of such information nor for any infringementof patents or other rightsof third parties which may results fromits use. No
license is grantedby implicationor otherwiseunder any patentor patentrights of SGS-THOMSON Microelectronics.Specifications mentioned
in thispublication are subjectto change withoutnotice. This publicationsupersedesand replacesall informationpreviously supplied.
SGS-THOMSON Microelectronicsproductsarenotauthorizedforuseas critical componentsinlife support devicesorsystems withoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics - Printed in Italy - All RightsReserved
Australia- Brazil - Canada - China - France- Germany- Hong Kong - Italy - Japan- Korea -Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain- Sweden- Switzerland- Taiwan -Thailand - UnitedKingdom - U.S.A
SGS-THOMSONMicroelectronicsGROUP OF COMPANIES
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