Datasheet BUT12F, BUT12AF Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BUT12F; BUT12AF

Silicon diffused power transistors

Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06

1997 Aug 13

Philips Semiconductors Product specification

Silicon diffused power transistors BUT12F; BUT12AF

DESCRIPTION

High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 plastic
package.

APPLICATIONS

• Converters

• Inverters

• Switching regulators

• Motor control systems.

QUICK REFERENCE DATA

PINNING

PIN DESCRIPTION

1 base
2 collector
3 emitter

mb mounting base; electrically isolated from all pins

handbook, halfpage

handbook, halfpage

23

1

MBK109

Fig.1 Simplified outline (SOT186) and symbol.

1

MBB008

2

3

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

CESM

collector-emitter peak voltage VBE=0

BUT12F 850 V
BUT12AF 1000 V

V

CEO

collector-emitter voltage open base

BUT12F 400 V

BUT12AF 450 V
V
I

Csat

CEsat

collector-emitter saturation voltage see Figs 7 and 9 1.5 V
collector saturation current

BUT12F 6 A

BUT12AF 5 A
I
I
P
t

C
CM

tot

f

collector current (DC) see Figs 2 and 4 8 A
collector current (peak value) see Fig.2 20 A
total power dissipation Th≤ 25 °C; see Fig.3 23 W
fall time resistive load; see Figs 11 and 12 0.8 µs

1997 Aug 13 1

Philips Semiconductors Product specification

Silicon diffused power transistors BUT12F; BUT12AF

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-h

R

th j-a

Notes

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

2. Mounted with heatsink compound and 30 ±5 N force on centre of package.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CESM

V

CEO

I

Csat

I

C

I

CM

I

B

I

BM

P

tot

T

stg

T

j

thermal resistance from junction to external heatsink note 1 5.5 K/W

note 2 3.9 K/W

thermal resistance from junction to ambient 55 K/W

collector-emitter peak voltage VBE=0

BUT12F − 850 V
BUT12AF − 1000 V

collector-emitter voltage open base

BUT12F − 400 V
BUT12AF − 450 V

collector saturation current

BUT12F − 6A

BUT12AF − 5A
collector current (DC) see Figs 2 and 4 − 8A
collector current (peak value) see Fig.2 − 20 A
base current (DC) − 4A
base current (peak value) − 6A
total power dissipation Th≤ 25 °C; see Fig.3; note 1 − 23 W
storage temperature −65 +150 °C
junction temperature − 150 °C

Note

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

ISOLATION CHARACTERISTICS

SYMBOL PARAMETER TYP. MAX. UNIT

V
C

isolM
isol

isolation voltage from all terminals to external heatsink (peak value) − 1500 V
isolation capacitance from collector to external heatsink − 12 pF

1997 Aug 13 2

Philips Semiconductors Product specification

Silicon diffused power transistors BUT12F; BUT12AF

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CEOsust

collector-emitter sustaining voltage IC= 100 mA; I

BUT12F 400 −−V
BUT12AF 450 −−V

V

CEsat

collector-emitter saturation voltage

BUT12F I

BUT12AF I

V

BEsat

base-emitter saturation voltage

BUT12F I
BUT12AF I

I

CES

I

EBO

h

FE

collector-emitter cut-off current VCE=V

emitter-base cut-off current VEB=9V; IC=0 −−10 mA
DC current gain VCE=5V; IC= 10 mA; see Fig.10 10 18 35

Switching times resistive load (see Fig.12)
t

on

turn-on time

BUT12F I
BUT12AF I

t

s

storage time

BUT12F I
BUT12AF I

t

f

fall time

BUT12F I

BUT12AF I
Switching times inductive load (see Fig.14)
t

s

storage time

BUT12F I

BUT12AF I

t

f

fall time

BUT12F I

BUT12AF I

see Figs 5 and 6

= 6 A; IB= 1.2 A; see

C

Figs 7 and 9

= 5 A; IB= 1 A; see

C

Figs 7 and 9

= 6 A; IB= 1.2 A; see Fig.7 −−1.5 V

C

= 5 A; IB= 1 A; see Fig.7 −−1.5 V

C

CESMmax

V

CE=VCESMmax

Tj= 125 °C; note 1

=5V; IC= 1 A; see Fig.10 10 20 35

V

CE

= 6 A; I

Con

= 5 A; I

Con

= 6 A; I

Con

= 5 A; I

Con

= 6 A; I

Con

= 5 A; I

Con

= 6 A; I

Con

VCL= 250 V; Tc= 100 °C

= 5 A; I

Con

VCL= 300 V; Tc= 100 °C

= 6 A; I

Con

VCL= 250 V; Tc= 100 °C

= 5 A; I

Con

VCL= 300 V; Tc= 100 °C

= 0; L = 25 mH;

Boff

−−1.5 V

−−1.5 V

; VBE= 0; note 1 −−1mA

Bon
Bon

Bon
Bon

Bon
Bon

Bon

Bon

Bon

Bon

; VBE=0;

= −I
= −I

= −I
= −I

= −I
= −I

= 1.2 A −−1µs

Boff

=1A −−1µs

Boff

= 1.2 A −−4µs

Boff

=1A −−4µs

Boff

= 1.2 A −−0.8 µs

Boff

=1A −−0.8 µs

Boff

= 1.2 A;

=1A;

= 1.2 A;

=1A;

−−3mA

− 1.9 2.5 µs

− 1.9 2.5 µs

− 200 300 ns

− 200 300 ns

Note

1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13 3

Philips Semiconductors Product specification

Silicon diffused power transistors BUT12F; BUT12AF

handbook, full pagewidth

10

10

(A)

2

10

I

C

I

CM max

I

10

C max

1

−1

−2

I

II

DC

MGB935

BUT12F

−3

10

−4

10

110

Tmb<25°C.
I -Region of permissible DC operation.
II -Permissible extension for repetitive pulse operation.

10

BUT12AF

Fig.2 Forward bias SOAR.

1997 Aug 13 4

2

3

10

VCE (V)

4

10

Philips Semiconductors Product specification

Silicon diffused power transistors BUT12F; BUT12AF

120

handbook, halfpage

P

tot max

(%)

80

40

0

050

100 150

T

h

Fig.3 Power derating curve.

o

(

MGK674

C)

10

handbook, halfpage

I

C

(A)

5

0

0 400

VBE= −1to−5 V; Tmb= 100 °C.

Fig.4 Reverse bias SOAR.

800

BUT12F
BUT12AF

VCE (V)

MGB892

1200

andbook, halfpage

30 to 60 Hz

6 V

300 Ω

100 to 200 Ω

L

horizontal

oscilloscope

vertical

1 Ω

+ 50 V

MGE252

Fig.5 Test circuit for collector-emitter

sustaining voltage.

1997 Aug 13 5

I

handbook, halfpage

C

(mA)

250
200

100

0

min

V

CEOsust

Fig.6 Oscilloscope display for collector-emitter

sustaining voltage.

MGE239

VCE (V)

Philips Semiconductors Product specification

Silicon diffused power transistors BUT12F; BUT12AF

2.0

handbook, full pagewidth

V

BEsat

V

CEsat

(V)

1.5

1.0

0.5

0
10

IC/IB=5.

−1

(1) VBE; Tj=25°C.
(2) VBE; Tj= 100 °C.

(1)

(2)

(3)

(4)

1

(3) VCE; Tj= 100 °C.
(4) VCE; Tj=25°C.

10

IC (A)

Fig.7 Base-emitter and collector-emitter saturation voltages as functions of base current; typical values.

MGB914

2

10

1.6

handbook, full pagewidth

V

BE

(V)

1.4

1.2

1.0

0.8
0 0.5

Tj=25°C.
(1) IC=8A.

(1)

(2)

(3)

2 2.51 1.5

(2) IC=6A.
(3) IC=3A.

Fig.8 Base-emitter voltage as a function of collector current; typical values.

IB (A)

MGB911

3

1997 Aug 13 6

Philips Semiconductors Product specification

Silicon diffused power transistors BUT12F; BUT12AF

10

handbook, halfpage

V

CEsat

(V)

1

−1

10

−2

10

(1) IC=3A.
(2) IC=6A.
(3) IC=8A.
Tj=25°C; solid line: typical values; dotted line: maximum values.

−1

10

(1) (2)

(3)

1

MGB872

IB (A)

Fig.9 Collector-emitter saturation voltage as a

function of base current.

2

10

handbook, halfpage

h

FE

10

1

−2

10

10

VCE = 5 V

1V

−1

10

11010

MBC096

IC (A)

2

Fig.10 DC current gain; typical values.

handbook, halfpage

V

IM

0

t

p

T

VCC= 250 V; tp=20µs; VIM= −6 to +8 V; tp/T = 0.01.
The values of RB and RL are selected in accordance with I

requirements.

I

Bon

V

CC

R

L

R

B

D.U.T.

Fig.11 Test circuit resistive load.

MGE244

Con

and

handbook, halfpage

90%

I

B

10%

90%

I

C

10%

tr≤ 20 ns.

Fig.12 Switching time waveforms with

tr ≤30 ns

t

on

resistive load.

MBB731

I

B on

t

I

B off

I

C on

t

f

t

s

t

1997 Aug 13 7

Philips Semiconductors Product specification

Silicon diffused power transistors BUT12F; BUT12AF

handbook, halfpage

+I

B

−V

BE

VCL= up to 1000 V; VCC= 30 V; VBE= −1to−5 V; LB=1µH;

= 200 µH.

L

C

L

V

CC

L

C

B

D.U.T.

Fig.13 Test circuit inductive load and reverse

bias SOAR.

V

CL

MGE246

handbook, halfpage

90%

I

B

10%

90%

I

C

10%

Fig.14 Switching times waveforms with

t

r

inductive load.

I

B on

t

−I

B off

I

C on

t

f

t

s
t

off

t

MGE238

1997 Aug 13 8

Philips Semiconductors Product specification

Silicon diffused power transistors BUT12F; BUT12AF

PACKAGE OUTLINE

Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 exposed tabs SOT186

E

E

1

P

D

1

D

m

q

A

A

1

L

1

b

L

0.55

0.38

1

2

23

1

b

e

e

1

D

17.0

16.4

D

1

7.9

10.2

7.5

REFERENCES

c

w M

0 5 10 mm

scale

E

E

1

5.7

5.3

2.54

9.6

e

e

1

14.3

5.08

13.5

L

DIMENSIONS (mm are the original dimensions)

A

A

b

UNIT

mm

Note

1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.

OUTLINE

VERSION

SOT186 TO-220

4.4

4.0

1

2.9

2.5

b

1

1.5

0.9

1.3

0.7

IEC JEDEC EIAJ

Q

c

(1)

L

1

4.8

4.0

m

L

2

3.2

0.9

10 0.4

3.0

0.5

EUROPEAN

PROJECTION

1.4

1.2

qQPL

w

4.4

4.0

ISSUE DATE

97-06-11

1997 Aug 13 9

Philips Semiconductors Product specification

Silicon diffused power transistors BUT12F; BUT12AF

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Aug 13 10

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. [phone], Fax. [phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone], Fax. [phone]
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. [phone], Fax. [phone]
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. [phone], Fax. [phone]
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone], Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1997 SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 137067/00/01/pp11 Date of release: 1997 Aug 13 Document order number: 9397 750 02715