Datasheet BUT11A, BUT11 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BUT11; BUT11A

Silicon diffused power transistors

Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06

1997 Aug 13

Philips Semiconductors Product specification

Silicon diffused power transistors BUT11; BUT11A

DESCRIPTION

High-voltage, high-speed,
glass-passivated NPN power
transistor in a TO-220AB package.

APPLICATIONS

ndbook, halfpage

handbook, halfpage

2

• Converters

• Inverters

1

• Switching regulators

• Motor control systems.

PINNING

123

MBB008

MBK106

3

PIN DESCRIPTION

1 base
2 collector; connected to

mounting base

Fig.1 Simplified outline (TO-220AB) and symbol.

3 emitter

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

CESM

collector-emitter peak voltage VBE=0

BUT11 850 V
BUT11A 1000 V

V

CEO

collector-emitter voltage open base

BUT11 400 V

BUT11A 450 V
V
I
I
P
t

C
CM

f

CEsat

tot

collector-emitter saturation voltage see Figs 7 and 9 1.5 V
collector current (DC) see Figs 2 and 4 5 A
collector current (peak value) see Fig. 4 10 A
total power dissipation Tmb≤ 25 °C; see Fig.3 100 W
fall time resistive load; see Figs 11 and 12 0.8 µs

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-mb

thermal resistance from junction to mounting base 1.25 K/W

1997 Aug 13 1

Philips Semiconductors Product specification

Silicon diffused power transistors BUT11; BUT11A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CESM

V

CEO

I

C

I

CM

I

B

I

BM

P

tot

T

stg

T

j

collector-emitter peak voltage VBE=0

BUT11 − 850 V
BUT11A − 1000 V

collector-emitter voltage open base

BUT11 − 400 V

BUT11A − 450 V
collector current (DC) see Figs 2 and 4 − 5A
collector current (peak value) tp< 2 ms; see Fig. 4 − 10 A
base current (DC) − 2A
base current (peak value) tp<2ms − 4A
total power dissipation Tmb≤ 25 °C; see Fig.3 − 100 W
storage temperature −65 +150 °C
junction temperature − 150 °C

handbook, halfpage

5

I

C

(A)

4

3

2

1

0

0 400

(1) BUT11.
(2) BUT11A.

(1)

800

VCE (V)

Fig.2 Reverse bias SOAR.

MGB895

(2)

1200

120

handbook, halfpage

P

tot max

(%)

80

40

0

050

100 150

T

mb

Fig.3 Power derating curve.

MGD283

o

(

C)

1997 Aug 13 2

Philips Semiconductors Product specification

Silicon diffused power transistors BUT11; BUT11A

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CEOsust

collector-emitter sustaining voltage IC= 100 mA; I

BUT11 400 −−V
BUT11A 450 −−V

V

CEsat

collector-emitter saturation voltage

BUT11 I
BUT11A I

V

BEsat

base-emitter saturation voltage

BUT11 I
BUT11A I

I

CES

I

EBO

h

FE

collector-emitter cut-off current VCE=V

emitter-base cut-off current VEB=9V; IC=0 −−10 mA
DC current gain VCE=5V; IC= 5 mA; see Fig.10 10 18 35

Switching times resistive load (see Fig.12)
t

on

turn-on time

BUT11 I
BUT11A I

t

s

storage time

BUT11 I
BUT11A I

t

f

fall time

BUT11 I

BUT11A I
Switching times inductive load (see Fig.14)
t

s

storage time

BUT11 I

BUT11A I

t

f

fall time

BUT11 I

BUT11A I

Figs 5 and 6

= 3 A; IB= 600 mA; see Figs 7 and 9 −−1.5 V

C

= 2.5 A; IB= 500 mA; see

C

Figs 7 and 9

= 3 A; IB= 0.6 A; see Fig.7 −−1.3 V

C

= 2.5 A; IB= 0.5 A; see Fig.7 −−1.3 V

C

CESMmax

V

CE=VCESMmax

note 1

V

=5V; IC= 500 mA; see Fig.10 10 20 35

CE

= 3 A; I

Con

= 2.5 A; I

Con

= 3 A; I

Con

= 2.5 A; I

Con

= 3 A; I

Con

= 2.5 A; I

Con

= 3 A; I

Con

= 3 A; I

I

Con

= 2.5 A; I

Con

I

= 2.5 A; I

Con

= 3 A; I

Con

= 3 A; I

I

Con

= 2.5 A; I

Con

= 2.5 A; I

I

Con

= 0; L = 25 mH; see

Boff

−−1.5 V

; VBE= 0; note 1 −−1mA
; VBE= 0; Tj= 125 °C;

= −I

Bon

Bon

= −I

Bon

Bon

= −I

Bon

Bon

= 600 mA − 1.1 1.4 µs

Bon

= 600 mA; Tj= 100 °C − 1.2 1.5 µs

Bon

Bon
Bon

= 600 mA − 80 150 ns

Bon

= 600 mA; Tj= 100 °C − 140 300 ns

Bon

Bon
Bon

= 600 mA −−1µs

Boff

= −I

= −I

= −I

= 500 mA −−1µs

Boff

= 600 mA −−4µs

Boff

= 500 mA −−4µs

Boff

= 600 mA −−0.8 µs

Boff

= 500 mA −−0.8 µs

Boff

= 500 mA − 1.1 1.4 µs
= 500 mA; Tj= 100 °C − 1.2 1.5 µs

= 500 mA − 80 150 ns
= 500 mA; Tj= 100 °C − 140 300 ns

−−2mA

Note

1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13 3

Philips Semiconductors Product specification

Silicon diffused power transistors BUT11; BUT11A

handbook, full pagewidth

10

(A)

2

10

I

C

I

CM max

δ = 0.01

MGB950

10

I

C max

tp =

20 µs

II

(1)

50 µs

1

100 µs

200 µs

−1

I

(2)

500 µs

1 ms

2 ms

10 ms

DC

−2

10

III

BUT11
BUT11A

IV

−3

10

10

2

10

3

10

VCE (V)

Tmb≤ 25°C.
I -Region of permissible DC operation.
II -Permissible extension for repetitive pulse operation.
III -Area of permissible operation during turn-on in single transistor converters, provided RBE≤ 100Ω and tp≤ 0.6µs.
IV -Repetitive pulse operation in this region is permissible provided VBE≤ 0 and tp≤ 5ms.
(1) P

tot max

and P

tot peak max

lines.

(2) Second breakdown limits.

Fig.4 Forward bias SOAR.

1997 Aug 13 4

4

10

Philips Semiconductors Product specification

Silicon diffused power transistors BUT11; BUT11A

andbook, halfpage

30 to 60 Hz

Fig.5 Test circuit for collector-emitter

2.0

handbook, full pagewidth

V

BEsat

V

CEsat

(V)

1.5

L

300 Ω

6 V

sustaining voltage.

100 to 200 Ω

horizontal

oscilloscope

vertical

1 Ω

+ 50 V

MGE252

I

handbook, halfpage

C

(mA)

250
200

100

0

min

V

CEOsust

Fig.6 Oscilloscope display for collector-emitter

sustaining voltage.

MGE239

VCE (V)

MGB913

1.0

0.5

0

−2

10

IC/IB=5. (1) VBE; Tj=25°C.

(2) VBE; Tj= 100 °C.

−1

10

(3) VCE; Tj= 100 °C.
(4) VCE; Tj=25°C.

(1)
(2)

(3)

(4)

1

IC (A)

Fig.7 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.

1997 Aug 13 5

10

Philips Semiconductors Product specification

Silicon diffused power transistors BUT11; BUT11A

1.6

handbook, full pagewidth

V

BE

(V)

1.4

1.2

1.0

0.8
0

Tj=25°C.
(1) IC=5A.

(1)

(2)

(3)

0.25 1.25

(2) IC=3A.
(3) IC= 1.5 A.

0.75

1.00.5

Fig.8 Base-emitter voltage as a function of base current.

IB (A)

MGB910

1.5

10

handbook, halfpage

(1) (2) (3)

V

CEsat

(V)

1

−1

10

−2

10

(1) IC= 1.5 A.
(2) IC=3A.
(3) IC=5A.
Tj=25°C; solid line: typical values; dotted line: maximum values.

−1

10

1

MGB873

IB (A)

Fig.9 Collector-emitter saturation voltage as a

function of base current.

I

C (A)

MBC095

2

2

10

handbook, halfpage

h

FE

10

1

−2

10

10

VCE = 5 V

−1

10

1V

11010

Fig.10 DC current gain; typical values.

1997 Aug 13 6

Philips Semiconductors Product specification

Silicon diffused power transistors BUT11; BUT11A

handbook, halfpage

V

IM

0

t

p

T

VCC= 250 V; tp=20µs; VIM= −6 to +8 V; tp/T = 0.01.
The values of RB and RL are selected in accordance with I

requirements.

I

Bon

V

CC

R

L

R

B

D.U.T.

Fig.11 Test circuit resistive load.

MGE244

Con

and

handbook, halfpage

90%

I

B

10%

90%

I

C

10%

Fig.12 Switching time waveforms with

tr ≤30 ns

t

on

resistive load.

MBB731

I

B on

t

I

B off

I

C on

t

f

t

s

t

handbook, halfpage

+I

B

V

EB

VCC= 300 V; VEB= 5 V; LB=1µH.

L

B

V

CC

L

C

D.U.T.

MBH383

Fig.13 Test circuit inductive load.

1997 Aug 13 7

handbook, halfpage

90%

I

B

10%

90%

I

C

10%

Fig.14 Switching time waveforms with

t

r

inductive load.

I

B on

t

−I

B off

I

C on

t

f

t

s
t

off

t

MGE238

Philips Semiconductors Product specification

Silicon diffused power transistors BUT11; BUT11A

PACKAGE OUTLINE

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 SOT78

AE

P

q

D

1

D

A

1

(1)

L

2

b

b

1.3

1.0

1

c

1

0.7

0.4

L

DIMENSIONS (mm are the original dimensions)

UNIT

Note

1. Terminals in this zone are not tinned.

A

4.5

4.1

1.39

1.27

mm

OUTLINE

VERSION

SOT78 TO-220

b

A

1

0.9

0.7

IEC JEDEC EIAJ

123

b

e

e

0 5 10 mm

D

D

1

15.8

6.4

15.2

5.9

REFERENCES

E

10.3

9.7

L

1

scale

2.54

Q

c

(1)

e

L

15.0

13.5

L

3.30

2.79

1

L

2

max.

3.0

qQ

P

3.8

3.0

3.6

2.7

EUROPEAN

PROJECTION

2.6

2.2

ISSUE DATE

97-06-11

1997 Aug 13 8

Philips Semiconductors Product specification

Silicon diffused power transistors BUT11; BUT11A

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Aug 13 9

Philips Semiconductors Product specification

Silicon diffused power transistors BUT11; BUT11A

NOTES

1997 Aug 13 10

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© Philips Electronics N.V. 1997 SCA55
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Printed in The Netherlands 137067/00/01/pp11 Date of release: 1997 Aug 13 Document order number: 9397 750 02713