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HIGH CURR ENT NPN SILICON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ MAINTAINS GOOD SWITCHING
PERFORMANCE EVEN WITHOUT
NEGATIVE BASE DRIVE
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUR52 is a silicon multiepitaxial planar NPN
transistors in modified Jedec TO-3 metal case,
intented for use in switching and linear
applications in military and industrial equipment.
BUR52
1
2
TO-3
(version " P ")
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) 350 V
CBO
Collector-Emitter Voltage (IB = 0) 250 V
CEO
Emitter-Base Voltage (IC = 0) 10 V
EBO
Collector Current 60 A
I
C
Collector Peak Current (tp = 10 ms) 80 A
CM
I
Base Current 16 A
B
Total Dissipation at Tc ≤ 25 oC 350 W
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
o
C
o
C
June 1997
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BUR52
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 350 V
V
CB
V
= 350 V T
CB
=250 V 1 mA
V
CE
= 7 V
V
EB
case
= 125 oC
0.2
2
0.2 µA
IC = 200 mA 250 V
Sustaining Voltage
V
V
CE(sat)
V
BE(sat)
h
EBO
FE
I
s/b
Emitter-base Voltage
(I
= 0)
C
∗ Collector-emitter
Saturation Voltage
∗ Base-emitter
Saturation Voltage
= 10 mA 10 V
I
E
IC = 25 A IB = 2 A
I
= 40 A IB = 4 A 0.7
C
IC = 25 A IB = 2 A
I
= 40 A IB = 4 A 1.5
C
∗ DC Current Gain IC = 5 A VCE = 4 V
I
= 40 A VCE = 4 V
C
Second Breakdown
VCE = 20 V t = 1 s 17.5 A
20
15
1
1.5
1.8
2
100
Collector Current
f
Transition-Frequency IC = 1 A VCE = 5 V
T
10 16 MHz
f = 1 MHz
t
t
Turn-on Time IC = 40 A IB1 = 4 A
on
Storage Time IC = 40 A IB1 = 4 A
s
t
Fall Time 0.2 0.6 µs
f
Clamped E
Collector
s/b
V
= 100 V
CC
I
= -4 A VCC = 100 V
B2
V
= 250 V L = 500 µH 40 A
clamp
0.3 1 µs
1.2 2 µs
Current
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
mA
mA
V
V
V
V
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P003I
TO-3 (version P) MECHANICAL DATA
BUR52
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 11.7 13.10 0.433 0.516
B 1.45 1.5 1.60 0.057 0.063
C 2.7 2.92 0.106 0.115
D 8.9 9.4 0.350 0.370
E 19.00 20.00 0.748 0.787
G 10.70 10.9 11.10 0.421 0.429 0.437
N 16.50 16.9 17.20 0.650 0.665 0.677
P 25.00 26.00 0.984 1.024
R 3.88 4.2 0.153 0.165
U 38.50 39.30 1.516 1.547
V 30.00 30.14 30.30 1.181 1.186 1.193
mm inch
P
A
G
U
V
N
O
B
D
C
E
R
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BUR52
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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