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BUPD1520
E
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1999 - REVISED SEPTEMBER 1999Copyright © 1999, Power Innovations Limited, UK
● Designed for Self Oscillating Inverter
Applications
TO-220 PACKAGE
(TOP VIEW)
● Rugged 1500 V Planar Construction
1
2
3
● Integral Free-Wheeling Anti-Parallel Diode
B
C
E
Pin 2 is in electrical contact with the mounting base.
device symbol
C
B
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
MDTRACA
RATING SYMBOL VALUE UNIT
Collector-emitter voltage (I
Collector-emitter voltage (V
Emitter-base voltage (I
= 0) V
B
= 0) V
BE
= 0) V
C
Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Peak base current (see Note 1) I
Continuous device dissipation at (or below) 25°C case temperature P
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T
NOTE 1: This value applies for t
= 10 ms, duty cycle ≤ 2%.
p
CEO
CES
EBO
C
CM
B
BM
tot
j
stg
L
700 V
1500 V
11 V
2 A
2.5 A
2 A
2.5 A
50 W
-55 to +125 °C
-55 to +150 °C
300 °C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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BUPD1520
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1999 - REVISED SEPTEMBER 1999
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CEO
CBO
EBO
FE
Collector-emitter
voltage
Collector-base
voltage
Emitter-base
voltage
Collector cut-off
current
Collector-emitter
cut-off current
Emitter cut-off
current
Base-emitter
saturation voltage
Collector-emitter
saturation voltage
Forward current
transfer ratio
V
V
V
I
CEO
I
CES
I
EBO
V
BE(sat)
V
CE(sat)
h
NOTES: 2. These parameters must be measured using pulse techniques, t
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 3.2 mm from the device body.
= 1 mA 700 V
I
C
= 100 µA 1500 V
I
C
= 1 mA 11 V
I
EB
= 700 V IB= 0 100 µA
V
CE
= 1500 V VBE= 0 100 µA
V
CE
= 11 V IC= 0 1 mA
V
EB
I
= 100 mA
B
= 100 mA
I
B
= 400 mA
I
B
IB = 50 mA
= 100 mA
I
B
V
= 5 V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
V
CE
I
= 500 mA
C
= 1 A
I
C
= 2 A
I
C
I
= 250 mA
C
= 500 mA
I
C
I
= 10 mA
C
= 100 mA
I
C
= 250 mA
I
C
= 500 mA
I
C
= 300 µs, duty cycle ≤ 2%.
p
(see Notes 2 and 3)
(see Notes 2 and 3)
(see Notes 2 and 3)
10
10
10
1.0
1.1
V
1.2
0.3
0.7
1.2
3.0
V
21
25
25
7
18
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to free air thermal resistance 62.5 °C/W
θJA
Junction to case thermal resistance 2 °C/W
θJC
resistive switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Delay time
t
d
Rise time 0.6 µs
t
r
Storage time 1.0 µs
t
s
Fall time 0.2 µs
t
f
= 500 mA
I
C
= 125 V
V
CC
I
B(on)
I
B(off)
= 50 mA
= 250 mA
t
= 300 µs
p
Duty cycle = 2%
0.1 µs
PRODUCT INFORMATION
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NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
TYPICAL CHARACTERISTICS
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
100
VCE = 5 V
10
- Forward Current Transfer Ratio
FE
h
BUPD1520
MAY 1999 - REVISED SEPTEMBER 1999
R3636CHF
TC = 125°C
TC = 25°C
TC = 0°C
1·0
0·01 0·1 1·0 10
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
10
TC = 25°C
1·0
- Collector Current - A
0·1
C
I
tp = 100 µs
tp = 1 ms
tp = 10 ms
DC Operation
0·01
1·0 10 100 1000
VCE - Collector-Emitter Voltage - V
IC - Collector Current - A
Figure 1.
R3636CFB
- Collector Current - A
I
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
3
I
= IC / 10
B(on)
V
= -5 V
BE(off)
TC = 25°C
2
1
C
0
0 200 400 600 800 1000 1200 1400 1600
VCE - Collector-Emitter Voltage - V
R3636CRB
Figure 2. Figure 3.
PRODUCT INFORMATION
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BUPD1520
NOTE A: The centre pin is in electrical contact with the mounting tab.
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1999 - REVISED SEPTEMBER 1999
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO-220
3,96
ø
3,71
18,0 TYP.
0,97
0,66
10,4
10,0
1 2 3
1,47
1,07
2,74
2,34
5,28
4,68
2,95
2,54
6,1
5,6
4,70
4,20
1,32
1,23
6,6
6,0
15,32
14,55
14,1
12,7
0,64
0,41
2,90
2,40
ALL LINEAR DIMENSIONS IN MILLIMETERS
PRODUCT INFORMATION
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BUPD1520
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1999 - REVISED SEPTEMBER 1999
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1999, Power Innovations Limited
PRODUCT INFORMATION
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