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HIGH VOLTAGE FAST-SWITCHING
■ NPNTRANSISTOR
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTERDIODE
■ HIGH VOLTAGECAPABILITY
■ LOW SPREADOF DYNAMIC PARAMETERS
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
APPLICATIONS:
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ FLYBACKAND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switchingspeeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintainingthe wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
BULT118D
NPN POWER TRANSISTOR
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
June 1997
Collector-Emitter Voltage (VBE= 0) 700 V
CES
Collector-Emitter Voltage (IB= 0) 400 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 2 A
I
C
Collect or Peak Current (tp<5ms) 4 A
CM
Base Current 1 A
I
B
Base Peak Current (tp<5ms) 2 A
BM
Total Dissipat ion at Tc=25oC45W
tot
Stora ge T emperature -65 to 150
stg
Max. Oper at i ng Junction T emperature 150
T
j
o
C
o
C
1/7
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BULT118D
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance J u nc tion-Case Max
Thermal Resistance Junction-Ambient Max
2.77
80
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CES
V
EBO
V
CEO(sus)
Collector Cut-off
Current (V
BE
=0)
=700V
V
CE
V
=700V Tj=125oC
CE
100
500
Emitt er-Base V oltage IE=10mA 9 V
Collector-Em it t er
IC= 100 mA L = 25 mH 400 V
Sust aining Voltage
I
CEO
Collector-Em it t er
VCE=400V 250 µA
Leakage Curren t
V
∗ Collector-Em it t er
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC C urr ent Gain IC=10mA VCE=5V
FE
IC=0.5A IB=0.1A
=1A IB=0.2A
I
C
=2A IB=0.4A
I
C
IC=0.5A IB=0.1A
=1A IB=0.2A
I
C
I
=2A IB=0.4A
C
=0.5A VCE=5V
I
C
=2A VCE=5V
I
C
10
10
8
0.5
1
1.5
1.0
1.2
1.3
50
RESI STIVE LO AD
t
Rise Tim e
r
t
s
t
f
St orage Time
Fall T ime
INDUCTIV E LOAD
t
∗
Pulsed: Pulse duration = 300 µs,duty cycle1.5 %
s
t
f
St orage Time
Fall T ime
V
=125 V IC=1A
CC
=0.2A IB2=-0.2A
I
B1
IC=1A IB1=0.2A
=-5V L=50mH
V
BE
V
clamp
= 300 V
0.4
3.2
0.25
0.8
0.16
0.7
4.5
0.4
µA
µA
V
V
V
V
V
V
µs
µs
µs
µs
µs
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BULT118D
Safe Operating Areas
DCCurrent Gain
DeratingCurve
DC Current Gain
CollectorEmitterSaturationVoltage
BaseEmitter Saturation Voltage
3/7
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BULT118D
InductiveFall Time InductiveStorage Time
ResistiveFall Time Resistive Load Storage Time
ReverseBiased SOA
4/7
Page 5
Figure1: Inductive Load Switching TestCircuits.
1) Fast electronic switch
2) Non-induct iv e Resistor
3) Fast r ecovery re ctifi er
Figure2: Resistive Load Switching Test Circuits.
BULT118D
1) Fast electronic switch
2) Non-induct iv e Resistor
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Page 6
BULT118D
SOT-32(TO-126)MECHANICALDATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2 2.15 0.084
mm inch
6/7
H2
0016114
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BULT118D
Informationfurnished isbelievedto beaccurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsabilityfor the
consequencesof useof such information nor for any infringementof patents or other rights of third parties whichmay results fromits use.No
license is grantedbyimplicationor otherwiseunder anypatentor patentrightsofSGS-THOMSONMicroelectronics. Specificationsmentioned
in thispublicationare subject to change without notice.This publicationsupersedesand replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor use as critical components inlifesupportdevicesor systems without express
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics - Printedin Italy- All RightsReserved
Australia- Brazil - Canada- China- France- Germany- Hong Kong - Italy - Japan- Korea -Malaysia -Malta - Morocco- The Netherlands-
Singapore - Spain-Sweden - Switzerland- Taiwan- Thailand- UnitedKingdom- U.S.A
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