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HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronics PREFERRED
SALESTYPE
■ NPNTRANSISTOR
■ HIGH VOLTAGECAPABILITY
■ LOW SPREADOF DYNAMIC PARAMETERS
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
APPLICATIONS:
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ FLYBACKAND FORWARDSINGLE
TRANSISTOR LOWPOWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switchingspeeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintainingthe wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
BULT118
NPN POWER TRANSISTORS
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
June 2000
Collector-Emitter V oltage (VBE= 0) 700 V
CES
Collector-Emitter V oltage (IB= 0) 400 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 2 A
I
C
Collect or Peak Cu rr ent (tp<5ms) 4 A
CM
Base Current 1 A
I
B
Base P eak Current (tp<5ms) 2 A
BM
Total Dissipation at Tc=25oC45W
tot
Stora ge Temperat u re -65 t o 150
stg
Max. O p er at i ng J unct ion T emperature 150
T
j
o
C
o
C
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BULT118
THERMAL DATA
R
thj-case
R
thj- amb
Ther mal Resistance Junct ion-Case Max
Thermal Resistance Junction-Ambient Max
2.77
80
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
CES
V
V
CEO(sus )
Collector Cut-of f
Current (V
EBO
Emitt er-Base Voltage IE=10mA 9 V
∗ Co llec tor-Emitt er
BE
=0)
V
=700V
CE
=700V Tj=125oC
V
CE
I
= 100 mA L = 25 mH 400 V
C
100
500
Sust aining Voltag e
=0)
(I
B
I
CEO
Collector-Emitt er
VCE=400V 250 µA
Leakage Current
V
∗ Collector-E mitt er
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er
BE(sat )
Saturation Voltage
h
∗ DC Curr ent Gain IC=10mA VCE=5V
FE
IC=0.5A IB=0.1A
=1A IB=0.2A
I
C
=2A IB=0.4A
I
C
IC=0.5A IB=0.1A
=1A IB=0.2A
I
C
=2A IB=0.4A
I
C
I
=0.5A VCE=5V
C
=2A VCE=5V
I
C
10
10
8
0.5
1
1.5
1.0
1.2
1.3
50
RESI STIVE LOAD
t
Rise Time
r
t
s
t
f
St orage Time
Fall Time
INDUCTIVE LO AD
t
∗ Pulsed: Pulse duration =300 ms, duty cycle 1.5 %
s
t
f
St orage Time
Fall Time
V
I
B1
IC=1A IB1=0.2A
V
V
=125 V IC=1A
CC
=0.2A IB2=-0.2A
=-5V L=50mH
BE
= 300 V
clamp
0.4
3.2
0.25
0.8
0.16
0.7
4.5
0.4
µA
µA
V
V
V
V
V
V
µs
µs
µs
µs
µs
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BULT118
Safe OperatingAreas
DCCurrent Gain
DeratingCurve
DC Current Gain
CollectorEmitter SaturationVoltage
BaseEmitter Saturation Voltage
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BULT118
InductiveFall Time InductiveStorage Time
ResistiveFall Time Resistive Load Storage Time
ReverseBiased SOA
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Figure1: InductiveLoad Switching TestCircuits.
1) Fast electronic switch
2) Non-inductiv e Resistor
3) Fast recovery rectifi er
Figure2: ResistiveLoad Switching Test Circuits.
BULT118
1) Fast electronic switch
2) Non-inductiv e Resistor
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BULT118
SOT-32 (TO-126) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
mm inch
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H2
c1
0016114
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BULT118
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise underany patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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