Page 1
HIGH VOLTAGE FAST-SWITCHING
■ SGS-THOMSONPREFERRED SALESTYPE
■ ORDERING CODES : BULK128D-A AND
BULK128D-B
■ NPNTRANSISTOR
■ HIGH VOLTAGECAPABILITY
■ LOW SPREADOF DYNAMICPARAMETERS
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
APPLICATIONS:
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ FLYBACKAND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switchingspeeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintainingthe wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
BULK128D
NPN POWER TRANSISTOR
3
2
1
SOT-82
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
December 1997
Collector-Emitter Voltage (VBE= 0) 700 V
CES
Collector-Emitter Voltage (IB= 0) 400 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 4 A
I
C
Collect or Peak Current ( tp<5ms) 8 A
CM
Base Current 2 A
I
B
Base Peak Current (tp<5ms) 4 A
BM
Total Dissipat ion at Tc=25oC55W
tot
Stora ge T emperature -65 to 150
stg
Max. Oper at i ng Junct i on T emperat u re 150
T
j
o
C
o
C
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Page 2
BULK128D
THERMAL DATA
R
thj-case
R
thj- amb
Ther mal Resistance Junc tion-Case Max
Thermal Resistance Junction-Ambient Max
2.27
80
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
I
CES
CEO
Collector C ut -off
Current (V
=-1.5V)
BE
Collector-E mitt er
=700V
V
CE
V
=700V Tj=125oC
CE
V
=400V 250 µA
CE
100
500
Leakage Current
=0)
(I
B
V
EBO
V
CEO(sus)
Emitt er-Base V oltage IE=10mA 9 V
Collector-E mitt er
IC= 100 mA L = 25 mH 400 V
Sust aining Volt age
V
∗ Collector- Emitt er
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er
BE(sat )
Saturation Voltage
h
∗ DC C urr ent Gain IC=10mA VCE=5V
FE
V
For ward Voltag e Dro p If=2 A 2.5 V
f
RESI STIVE LO AD
t
s
St orage Time
BULK128D-A
BULK128D-B
t
Fall T ime
f
INDUCTI V E LOA D
t
s
t
f
St orage Time
Fall Time
IC=0.5A IB=0.1A
=1A IB=0.2A
I
C
=2.5A IB=0.5A
I
C
IC=0.5A IB=0.1A
I
=1A IB=0.2A
C
=2.5A IB=0.5A
I
C
=2A VCE=5V
I
C
VCC=250V IC=2A
=0.4A IB2=-0.4A
I
B1
=30µs
T
p
(see f ig. 2 )
VCl=200 V IC=2A
=0.4A V
I
B1
=0Ω L=200 µH
R
BB
BE(of f)
=-5V
10
8
1.7
2.0
0.2
0.6
0.1
0.7
1.0
1.5
1.1
1.2
1.3
2.5
2.9
(see f ig. 1 )
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
µA
µA
V
V
V
V
V
V
µs
µs
µs
µs
µs
Note: Ordering codes:
- BULK128D-A
- BULK128D-B.
Please contact your nearest ST Microelectronics sales office for delivery details.
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Page 3
BULK128D
Safe Operating Areas
DCCurrent Gain
DeratingCurve
DC Current Gain
CollectorEmitter SaturationVoltage
BaseEmitter Saturation Voltage
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Page 4
BULK128D
InductiveFall Time InductiveStorage Time
ResistiveLoad Fall Time Resistive Load Storage Time
ReverseBiased SOA
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Page 5
Figure1: Inductive Load Switching TestCircuit.
1) Fast electronic switch
2) Non-induct iv e Resistor
3) Fast recovery rect ifier
Figure2: Resistive Load Switching Test Circuit.
BULK128D
1) Fast electronic switch
2) Non-induct iv e Resistor
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Page 6
BULK128D
SOT-82MECHANICALDATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.444
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.04 0.106
c1 1.0 1.3 0.039 0.05
D 15.4 16 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
H 2.54 0.100
H2 2.15 0.084
mm inch
C
H2
c1
b
b1
A
F
BD
H
e
e3
P032A
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BULK128D
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such information nor for any infringement of patents or otherrights of third parties which may results from its use. No
licenseis granted by implicationor otherwise underany patentor patent rights of SGS-THOMSONMicroelectronics.Specificationsmentioned
in this publicationare subjectto change without notice.This publication supersedes and replaces all information previouslysupplied.
SGS-THOMSONMicroelectronics productsarenotauthorizedfor useas critical components in lifesupportdevices or systems withoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics - Printedin Italy - AllRights Reserved
Australia- Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta- Morocco - The Netherlands -
Singapore- Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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