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HIGH VOLTAGE FAST-SWITCHING
■ SGS-THOMSONPREFERRED SALESTYPE
■ HIGH VOLTAGECAPABILITY
■ LOW SPREADOF DYNAMICPARAMETERS
■ LOW BASE-DRIVEREQUIREMENTS
■ VERYHIGH SWITCHINGSPEED
■ FULLYCHARACTERIZED AT 125
APPLICATIONS
■ ELECTRONICTRANSFORMER FOR
HALOGENLAMPS
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ SWITCHMODEPOWERSUPPLIES
DESCRIPTION
The BUL810 is manufacturedusing high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structureto enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
o
C
BUL810
NPN POWER TRANSISTOR
3
2
1
TO-218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
March 1998
Collector-Emitter Voltage (VBE= 0) 1000 V
CES
Collector-Emitter Voltage (IB= 0) 450 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 15 A
I
C
Collect or Peak Current ( tp<5ms) 22 A
CM
Base Current 5 A
I
B
Base Peak Current (tp<5ms) 10 A
BM
Total Dissipat ion at Tc=25oC 125 W
tot
Stora ge T emperature -65 to 150
stg
Max. Oper at i ng Juncti on Temperatu re 150
T
j
o
C
o
C
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Page 2
BUL810
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance Junctio n- Case Max
Thermal Resistance Junction-Ambient Max
30
1
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collector Cut-off
Current (V
BE
=0)
Collector Cut-off
Current (I
B
=0)
Collector-Em it t er
=1000V
V
CE
V
=1000V Tj= 125oC
CE
V
=450V 250 µA
CE
100
500
IC= 100 mA L = 25 m H 450 V
Sust aining Voltage
V
V
CE(sat)
EBO
Emitt er-Base V oltage
=0)
(I
C
∗ Collector-Em it t er
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC C urr ent Gain IC=5A VCE=5V
FE
INDUCTIV E LOAD
t
s
t
f
St orage Time
Fall T ime
INDUCTIV E LOAD
t
∗
Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
s
t
f
St orage Time
Fall T ime
I
=10mA 9 V
E
IC=5A IB=1A
=8A IB=1.6A
I
C
=12A IB=2.4A
I
C
IC=5A IB=1A
=8A IB=1.6A
I
C
=10mA VCE=5V
I
C
10
10
1
1.5
5
1.3
1.6
40
IC=8A IB1=1.6A
V
V
=-5V RBB=0.4Ω
BE(off )
= 350 V L = 200 µ H
CL
1.5
55
2.3
110
IC=8A IB1=1.6 A
V
V
T
=-5V RBB=0.4Ω
BE(off )
= 350 V L = 200 µ H
CL
= 100oC
j
1.9
80
µA
µA
V
V
V
V
V
µs
ns
µs
ns
Safe Operating Areas Derating Curve
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Page 3
BUL810
DCCurrent Gain
CollectorEmitterSaturationVoltage
DC Current Gain
BaseEmitterSaturationVoltage
InductiveFall Time
InductiveStorage Time
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Page 4
BUL810
ReverseBiasedSOA RBSOAand Inductive Load SwitchingTest
Circuits
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
4/6
Page 5
TO-218 (SOT-93) MECHANICAL DATA
BUL810
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598
L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220
R – 12.2 – 0.480
Ø 4 4.1 0.157 0.161
mm inch
E
A
C
L5
D
L6
L3
L2
H
G
¯
F
R
123
P025A
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Page 6
BUL810
Information furnished is believed tobeaccurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rightsof third parties which may results from its use. No
license is granted by implication or otherwise underany patent orpatent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedfor use as criticalcomponentsin life support devices orsystems without express
written approval of SGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan -Thailand - United Kingdom -U.S.A
6/6
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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