Page 1
HIGH VOLTAGE FAST-SWITCHING
■ SGS-THOMSONPREFERRED SALESTYPE
■ HIGH RUGGEDNESS
■ NPNTRANSISTOR
■ HIGH VOLTAGECAPABILITY
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
■ FULLYCHARACTERISEDAT 125
APPLICATIONS
■ ELECTRONICS TRANFORMER FOR
HALOGENLAMPS
■ SWITCHMODE POWER SUPPLIES
DESCRIPTION
The BUL67 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structureto enhance switching speeds.
The BUL series is designed for use in lighting
applications and in low cost switch-mode power
supplies.
o
C
BUL67
NPN POWER TRANSISTOR
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
September 1997
Collector-Emitter Voltage (VBE= 0) 700 V
CES
Collector-Emitter Voltage (IB= 0) 400 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 10 A
I
C
Collect or Peak Current ( tp<5ms) 18 A
CM
Base Current 3.5 A
I
B
Base Peak Current (tp<5ms) 7 A
BM
Total Dissipat ion at Tc=25oC 100 W
tot
Stora ge T emper at u re -65 to 150
stg
Max. Op erat i ng Junction Temperature 150
T
j
o
C
o
C
1/6
Page 2
BUL67
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance Ju nc t io n- Case Max
Thermal Resistance Junction-Ambient Max
1.25
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collector C ut -off
Current (V
BE
=0)
Collector C ut -off
Current (I
B
=0)
Collector-Emit t er
=700V
V
CE
V
=700V Tj=125oC
CE
V
=400V 250 µA
CE
100
500
IC= 100 mA L = 25 m H 400 V
Sust aining V olt ag e
V
V
CE(sat)
EBO
Emitt er-Base V oltage
=0)
(I
C
∗ Collector-Emit t er
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC C urr ent Gain IC=1.5A VCE=3V
FE
INDUCTIVE LOAD
t
s
t
f
St orage Time
Fall T ime
INDUCTIVE LOAD
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
s
t
f
St orage Time
Fall T ime
I
=10mA 9 V
E
IC=3A IB=0.6A
=4A IB=0.8A
I
C
=6A IB=1.5A
I
C
IC=3A IB=0.6A
=4A IB=0.8A
I
C
I
=6A IB=1.5A
C
=10mA VCE=5V
I
C
15
10
0.8
1
1.5
1.2
1.3
1.5
50
IC=3A VCL= 250 V
=0.6A IB2=-1.2A
I
B1
L = 200 µ H
2.1
100
3.2
180
IC=3A VCL= 250 V
=0.6A IB2=-1.2A
I
B1
L = 200 µ HT
= 125oC
j
3
180
µA
µA
V
V
V
V
V
V
µs
ns
µs
ns
Safe Operating Areas Derating Curve
2/6
Page 3
BUL67
DCCurrent Gain
CollectorEmitter SaturationVoltage
DC Current Gain
BaseEmitter Saturation Voltage
InductiveFall Time
InductiveStorage Time
3/6
Page 4
BUL67
InductiveFall Time InductiveStorage Time
ReverseBiased SOA RBSOAand InductiveLoad SwitchingTest
Circuits
4/6
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
Page 5
TO-220 MECHANICALDATA
BUL67
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
5/6
Page 6
BUL67
Informationfurnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such information nor for any infringementof patents or other rights of third parties which may results fromits use.No
license is granted byimplicationor otherwiseunder anypatentor patentrights ofSGS-THOMSONMicroelectronics.Specificationsmentioned
in thispublication are subject to change without notice. This publicationsupersedesand replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorizedfor use ascritical componentsin lifesupportdevices or systemswithout express
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia- Brazil - Canada- China- France- Germany- Hong Kong - Italy - Japan- Korea -Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom- U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
...
6/6
Loading...