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HIGH VOLTAGE FAST-SWITCHING
■ SGS-THOMSONPREFERRED SALESTYPE
■ NPNTRANSISTOR
■ HIGH VOLTAGECAPABILITY
■ LOW SPREADOF DYNAMICPARAMETERS
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ LOW BASE-DRIVEREQUIREMENTS
■ VERYHIGH SWITCHINGSPEED
■ FULLYCHARACTERISEDAT 125
■ HIGH RUGGEDNESS
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTERDIODE
APPLICATIONS
■ ELECTRONICTRANSFORMERS FOR
HALOGENLAMPS
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ SWITCHMODE POWER SUPPLIES
o
C
BUL58D
NPN POWER TRANSISTOR
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
The BUL58D is manufactured using high voltage
Multi Epitaxial Planar technology to enhance
switching speeds while maintaining a wide
RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE= 0) 800 V
CES
Collector-Emitter Voltage (IB= 0) 450 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 8 A
I
C
Collect or Peak Current (tp<5ms) 16 A
CM
Base Current 4 A
I
B
Base Peak Cur rent (tp<5ms) 8 A
BM
Total Diss ipat i on at Tc=25oC85W
tot
Stora ge T emperature -65 to 150
stg
Max. Op erat ing Junction T em per at u r e 150
T
j
o
C
o
C
September 1997
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BUL58D
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance Ju nct io n- Case Max
Thermal Resistance Junction-Ambient Max
1.47
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collector C ut -off
Current (V
BE
=0)
Collector C ut -off
Current (I
B
=0)
Collector-Emit t er
=800V
V
CE
V
=800V Tj=125oC
CEO
V
=450V 200 µA
CE
200
500
IC= 100 mA L = 25 mH 450 V
Sust aining V olt ag e
V
V
CE(sat)
EBO
Emitt er-Base V oltage
=0)
(I
C
∗ Co llector-Em itt er
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC C urr ent Gain IC=5A VCE=5V
FE
INDUCTIVE LOAD
t
s
t
f
St orage Time
Fall T ime
INDUCTIVE LOAD
t
V
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
St orage Time
s
t
Fall T ime
f
Diode Forward V oltage IC=3A 3 V
f
I
=10mA 9 V
E
IC=4A IB=0.8A
=5A IB=1A
I
C
IC=4A IB=0.8A
I
=5A IB=1A
C
1.5
2
1.3
1.5
5
=500mA VCE=5V
I
C
38
IC=2A IB1=0.4A
V
V
=-5V RBB=0Ω
BE(off)
= 250 V L = 200 µ H
CL
90
1
1.8
180
IC=2A IB1=0.4A
V
V
T
=-5V RBB=0Ω
BE(off)
= 250 V L = 200 µ H
CL
= 125oC
j
1.5
180
µA
µA
V
V
V
V
µs
ns
µs
ns
Safe Operating Areas Derating Curve
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Page 3
BUL58D
DCCurrent Gain
CollectorEmitter SaturationVoltage
DC Current Gain
BaseEmitter Saturation Voltage
InductiveFall Time
InductiveStorage Time
3/6
Page 4
BUL58D
ReverseBiased SOA RBSOAand InductiveLoad SwitchingTest
Circuit
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
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Page 5
TO-220 MECHANICALDATA
BUL58D
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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Page 6
BUL58D
Informationfurnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such information nor for any infringementof patents or other rights of third parties which may results fromits use.No
license is granted byimplicationor otherwiseunder anypatentor patentrights ofSGS-THOMSONMicroelectronics.Specificationsmentioned
in thispublication are subject to change without notice. This publicationsupersedesand replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorizedfor use ascritical componentsin lifesupportdevices or systemswithout express
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia- Brazil - Canada- China- France- Germany- Hong Kong - Italy - Japan- Korea -Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom- U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
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