Page 1
BUL57
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronicsPREFERRED
SALESTYPES
■ NPNTRANSISTORS
■ HIGH VOLTAGECAPABILITY
■ LOW SPREADOF DYNAMIC PARAMETERS
■ MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
■ FULLYCHARACTERIZED AT 125
■ LARGERBSOA
■ TO-220FPFULLYISOLATEDPACKAGE
(U.L. COMPLIANT)
APPLICATIONS:
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ SWITCHMODEPOWER SUPPLIES
o
C
BUL57FP
NPN POWER TRANSISTORS
3
2
1
TO-220 TO-220FP
3
2
1
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM
The devices are manufacturedusing high voltage
Multi Epitaxial Planar technology for high
switchingspeeds and medium voltage capability.
They use a Cellular Emitter structure with planar
edge terminationto enhance switching speeds.
The devices are designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BUL57 BUL57FP
V
V
V
I
I
P
T
Collect or-Emit t e r V oltage (VBE= 0 ) 700 V
CES
Collect or-Emit t e r V oltage (IB= 0 ) 400 V
CEO
Emitter-Base Voltag e (IC=0) 9 V
EBO
I
Collect or Current 8 A
C
Collect or Peak Cur rent (tp<5ms) 16 A
CM
I
Base Current 4 A
B
Base P eak Cu rrent (tp<5ms) 7 A
BM
Tot al Dissipa t io n at Tc=25oC8535W
tot
Storage Temperature -65 to 150
stg
T
Max. Oper ating Junct io n T e m pe r ature 150
j
o
C
o
C
January 1999
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BUL57 / BUL57FP
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistanc e J unction-C as e Max
Ther mal Resistanc e J unction-Am b ient Max
TO-220 TO-220FP
1.47
62.5
3.5
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collec t or Cut -off
Current (V
BE
=0)
Collec t or Cut -off
Current (I
B
=0)
Collec t or -Emitt er
V
=700V
CE
=700V Tj=125oC
V
CE
V
= 400 V 250 µA
EC
100
500
IC= 100 m A L = 25 mH 400 V
Sust aining Voltage
V
V
CE(sat)
EBO
Emitter-Base Voltage
=0)
(I
C
∗ Collector-E mitter
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC Current Ga in IC=2A VCE=5V
FE
INDUCTIV E LO AD
t
s
t
f
Storage Time
Fall Time
INDUCTIV E LO AD
t
s
t
f
Storage Time
Fall Time
INDUCTIV E LO AD
t
s
t
f
Storage Time
Fall Time
INDUCTIV E LO AD
t
s
t
f
Storage Time
Fall Time
RESI STIVE LOAD
s
t
f
Storage Time
Fall Time
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
I
=10mA 9 V
E
IC=2A IB=0.4A
=3A IB=0.6A
I
C
=4A IB=0.8A
I
C
=5A IB=1A
I
C
=8A IB=2A 2
I
C
IC=2A IB=0.4A
=5A IB=1A
I
C
15
=4A VCE=5V
I
C
=10mA VCE=5V
I
C
6
8
0.65
0.75
1.2
2
1.2
1.6
40
IC=3A VCL=250V
=0.6A IB2=-1.2A
I
B1
L=200µH
1.8
60
2.6
110
IC=3A VCL=250V
=0.6A IB2=-1.2A
I
B1
L=200µHT
=125oC
j
2.6
110
IC=3A IB1=0.6A
V
V
=-5V RBB=0Ω
BE(off )
=250V L=200µH
CL
1
54
1.6
100
IC=3A IB1=0.6A
V
V
T
=-5V RBB=0Ω
BE(off )
=250V L=200µH
CL
=125oC
j
1.5
90
VCC=300V IC=2A
=0.4A IB2=-0.4A
I
B1
Tp = 30 µ s
34.2
350
µA
µA
V
V
V
V
V
V
V
µs
ns
µs
ns
µs
ns
µs
ns
ms
ns
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Page 3
BUL57 / BUL57FP
Safe Operating Areas
DCCurrent Gain
DeratingCurve
DC Current Gain
CollectorEmitterSaturationVoltage
BaseEmitterSaturation Voltage
3/7
Page 4
BUL57 / BUL57FP
InductiveFall Time InductiveStorage Time
ResistiveFall Time Resistive Load Storage Time
ReverseBiased SOA RBSOAand InductiveLoad SwitchingTest
Circuit
1) Fast e lectronic switc h
2) Non-inductive Re s ist or
3) Fast recovery Rectifier
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Page 5
TO-220 MECHANICAL DATA
BUL57 / BUL57FP
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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BUL57 / BUL57FP
TO-220FP MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L4
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BUL57 / BUL57FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for theconsequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise underany patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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