Datasheet BUL45D2 Datasheet (Motorola)

1

Motorola Bipolar Power Transistor Device Data

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The BUL45D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)
make it ideally suitable for light ballast applications. Therefore, there is no need to
guarantee an hFE window.

Main features:

• Low Base Drive Requirement

• High Peak DC Current Gain (55 Typical) @ IC = 100 mA

• Extremely Low Storage Time Min/Max Guarantees Due to the

H2BIP Structure which Minimizes the Spread

• Integrated Collector–Emitter Free Wheeling Diode

• Fully Characterized and Guaranteed Dynamic V

CE(sat)

• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads

It’s characteristics make it also suitable for PFC application.

MAXIMUM RATINGS

Rating

Symbol

ОООООООО

ОООООООО

ОООООООО

Value

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Unit

Collector–Emitter Sustaining Voltage

V

CEO

ОООООООО

ОООООООО

ОООООООО

400

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector–Base Breakdown Voltage

V

CBO

ОООООООО

ОООООООО

ОООООООО

700

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector–Emitter Breakdown Voltage

V

CES

ОООООООО

ОООООООО

ОООООООО

700

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Emitter–Base Voltage

V

EBO

ОООООООО

ОООООООО

ОООООООО

12

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector Current — Continuous

— Peak (1)

I

C

I

CM

ОООООООО

ОООООООО

ОООООООО

ОООООООО

5

10

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

Base Current — Continuous

Base Current — Peak (1)

I

B

I

BM

ОООООООО

ОООООООО

ОООООООО

2
4

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

*Total Device Dissipation @ TC = 25_C

*Derate above 25°C

P

D

ОООООООО

ОООООООО

ОООООООО

ОООООООО

75

0.6

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Watt

W/_C

Operating and Storage Temperature

TJ, T

stg

ОООООООО

ОООООООО

ОООООООО

–65 to 150

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C

THERMAL CHARACTERISTICS

Thermal Resistance

— Junction to Case
— Junction to Ambient

R

θJC

R

θJA

ОООООООО

ОООООООО

ОООООООО

ОООООООО

1.65

62.5

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C/W

Maximum Lead Temperature for Soldering Purposes:

1/8″ from case for 5 seconds

T

L

ОООООООО

ОООООООО

ОООООООО

ОООООООО

260

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by BUL45D2/D

 Motorola, Inc. 1995



POWER TRANSISTORS

5 AMPERES

700 VOLTS

75 WATTS

CASE 221A–06

TO–220AB

BUL45D2

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS

(T

C

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 100 mA, L = 25 mH)

V

CEO(sus)

400

450

Vdc

Collector–Base Breakdown Voltage

(I

CBO

= 1 mA)

V

CBO

700

910

Vdc

Emitter–Base Breakdown Voltage

(I

EBO

= 1 mA)

V

EBO

12

14.1

Vdc

Collector Cutoff Current

(VCE = Rated V

CEO

, IB = 0)

I

CEO

100

µAdc

Collector Cutoff Current (VCE = Rated V

CES

, VEB = 0)

Collector Cutoff Current (VCE = 500 V, VEB = 0)

@ TC = 25°C
@ TC = 125°C
@ TC = 125°C

I

CES

100
500
100

µAdc

Emitter–Cutoff Current

(VEB = 10 Vdc, IC = 0)

I

EBO

100

µAdc

ON CHARACTERISTICS

Base–Emitter Saturation Voltage

(IC = 0.8 Adc, IB = 80 mAdc)

@ TC = 25°C
@ TC = 125°C

0.8

0.7

1

0.9

(IC = 2 Adc, IB = 0.4 Adc)

@ TC = 25°C
@ TC = 125°C

0.89

0.79

1

0.9

Collector–Emitter Saturation Voltage

(IC = 0.8 Adc, IB = 80 mAdc)

@ TC = 25°C
@ TC = 125°C

0.28

0.32

0.4

0.5

(IC = 2 Adc, IB = 0.4 Adc)

@ TC = 25°C
@ TC = 125°C

0.32

0.38

0.5

0.6

(IC = 0.8 Adc, IB = 40 mAdc)

@ TC = 25°C
@ TC = 125°C

0.46

0.62

0.75
1

DC Current Gain

(IC = 0.8 Adc, VCE = 1 Vdc)

@ TC = 25°C
@ TC = 125°C

22
20

34
29

(IC = 2 Adc, VCE = 1 Vdc)

@ TC = 25°C
@ TC = 125°C

10

7

14

9.5

DIODE CHARACTERISTICS

Forward Diode Voltage

(IEC = 1 Adc)

@ TC = 25°C
@ TC = 125°C

1.04

0.7

1.5

(IEC = 2 Adc)

@ TC = 25°C
@ TC = 125°C

1.2

1.6

(IEC = 0.4 Adc)

@ TC = 25°C
@ TC = 125°C

0.85

0.62

1.2

Forward Recovery Time (see Figure 27)

(IF = 1 Adc, di/dt = 10 A/µs)

@ TC = 25°C

330

(IF = 2 Adc, di/dt = 10 A/µs)

@ TC = 25°C

360

(IF = 0.4 Adc, di/dt = 10 A/µs)

@ TC = 25°C

320

V

BE(sat)

Vdc

V

CE(sat)

h

FE

V

EC

T

Vdc

fr

—

V

ns

BUL45D2

3

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

ÎÎÎ

ÎÎÎ

ÎÎÎ

Typ

Max

Unit

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

f

T

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

13

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

C

ob

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

50

75

pF

Input Capacitance

(VEB = 8 Vdc)

C

ib

ÎÎÎ

ÎÎÎ

ÎÎÎ

340

500

pF

DYNAMIC SATURATION VOLTAGE

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

@ 1 µs

@ TC = 25°C
@ TC = 125°C

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

3.7

9.4

V

Dynamic Saturation
Voltage:

Determined 1 µs and

IB1 = 100 mA

VCC = 300 V

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

@ 3 µs

@ TC = 25°C
@ TC = 125°C

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

0.35

2.7

V

µs and
3 µs respectively after
rising IB1 reaches

ÎÎÎ

ÎÎÎ

ÎÎÎ

@ 1 µs

@ TC = 25°C
@ TC = 125°C

ÎÎÎ

ÎÎÎ

ÎÎÎ

3.9
12

V

90% of final I

B1

IB1 = 0.8 A

VCC = 300 V

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

@ 3 µs

@ TC = 25°C
@ TC = 125°C

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

0.4

1.5

V

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)

Turn–on Time

@ TC = 25°C
@ TC = 125°C

t

on

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

90

105

150

ns

Turn–off Time

IB2 = 1 Adc

VCC = 300 Vdc

@ TC = 25°C
@ TC = 125°C

t

off

ÎÎÎ

ÎÎÎ

ÎÎÎ

1.15

1.5

1.3

µs

Turn–on Time

@ TC = 25°C
@ TC = 125°C

t

on

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

90

110

150

ns

Turn–off Time

IB2 = 0.4 Adc

VCC = 300 Vdc

@ TC = 25°C
@ TC = 125°C

t

off

2.1

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

3.1

2.4

µs

SWITCHING CHARACTERISTICS: Inductive Load (V

clamp

= 300 V, VCC = 15 V, L = 200 µH)

Fall Time

@ TC = 25°C
@ TC = 125°C

t

f

ÎÎÎ

ÎÎÎ

ÎÎÎ

90
93

150

ns

Storage Time

IC = 1 Adc
IB1 = 100 mAdc
I

= 500 mAdc

@ TC = 25°C
@ TC = 125°C

t

s

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

0.72

1.05

0.9

µs

Crossover Time

IB2 = 500 mAdc

@ TC = 25°C
@ TC = 125°C

t

c

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

95
95

150

ns

Fall Time

@ TC = 25°C
@ TC = 125°C

t

f

ÎÎÎ

ÎÎÎ

ÎÎÎ

80

105

150

ns

Storage Time

IC = 2 Adc

IB1 = 0.4 Adc
I

= 0.4 Adc

@ TC = 25°C
@ TC = 125°C

t

s

1.95

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

2.9

2.25

µs

Crossover Time

IB2 = 0.4 Adc

@ TC = 25°C
@ TC = 125°C

t

c

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

225
450

300

ns

IC = 1 A

V

CE(dsat)

IC = 2 A

IC = 2 Adc, IB1 = 0.4 Adc

IC = 2 Adc, IB1 = 0.4 Adc

BUL45D2

4

Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 1. DC Current Gain @ 1 Volt

100

80

60

40

20

0

1010.10.010.001

IC, COLLECTOR CURRENT (AMPS)

h

FE

, DC CURRENT GAIN

TJ = 125°C

TJ = 25°C

TJ = –20°C

VCE = 1 V

Figure 2. DC Current Gain @ 5 Volt

100

80

60

40

20

0

1010.10.010.001

IC, COLLECTOR CURRENT (AMPS)

h

FE

, DC CURRENT GAIN

TJ = 125°C

TJ = 25°C

TJ = –20°C

VCE = 5 V

Figure 3. Collector Saturation Region

4

2

0

100.10.010.001

IB, BASE CURRENT (AMPS)

IC = 500 mA

Figure 4. Collector–Emitter Saturation Voltage

10

1

0.1

1010.10.010.001

IC, COLLECTOR CURRENT (AMPS)

TJ = 125

°

C

TJ = 25°C

TJ = –20°C

IC/IB = 5

V

CE

, VOLTAGE (VOLTS)

V

CE

, VOLTAGE (VOLTS)

3

1

TJ = 25°C

1 A

4 A

Figure 5. Collector–Emitter Saturation Voltage

10

1

0.1

100.10.010.001

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Collector–Emitter Saturation Voltage

10

1

0.1

10.10.010.001

IC, COLLECTOR CURRENT (AMPS)

TJ = 125

°

C

TJ = 25°C

TJ = –20°C

V

CE

, VOLTAGE (VOLTS)

V

CE

, VOLTAGE (VOLTS)

1

IC/IB = 10

TJ = 125°C

TJ = 25°C

TJ = –20°C

IC/IB = 20

1

5 A

3 A

2 A

10

BUL45D2

5

Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 7. Base–Emitter Saturation Region

10

1

0.1

100.10.010.001

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Base–Emitter Saturation Region

10

1

0.1

100.10.010.001

IC, COLLECTOR CURRENT (AMPS)

TJ = 125

°

C

TJ = 25°C

TJ = –20°C

V

BE

, VOLTAGE (VOLTS)

V

BE

, VOLTAGE (VOLTS)

1

TJ = 125°C

TJ = 25°C

TJ = –20°C

IC/IB = 10

1

IC/IB = 5

Figure 9. Base–Emitter Saturation Region

10

1

0.1

10.10.010.001

IC, COLLECTOR CURRENT (AMPS)

Figure 10. Forward Diode Voltage

10

1

0.1

100.10.01

REVERSE EMITTER–COLLECTOR CURRENT (AMPS)

125

°

C

25°C

V

BE

, VOLTAGE (VOLTS)

FORWARD DIODE VOLTAGE (VOLTS)

TJ = 125°C

TJ = 25°C

TJ = –20°C

1

IC/IB = 20

Figure 11. Capacitance

1000

10

1

100101

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

100

Cib (pF)

Cob (pF)

TJ = 25°C
f

(test)

= 1 MHz

Figure 12. BVCER = f(ICER)

1000

700

400

100010010

RBE (

Ω

)

BVCER (VOLTS)

TJ = 25°C

BVCER @ 10 mA

900

800

600

500

BVCER(sus) @ 200 mA

10

BUL45D2

6

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

Figure 13. Resistive Switch Time, t

on

1000

400

0

41.50.5

IC, COLLECTOR CURRENT (AMPS)

3.5

t, TIME (ns)

800

600

200

TJ = 125°C
TJ = 25

°

C

IC/IB = 10

IC/IB = 5

I

Bon

= I

Boff

VCC = 300 V
PW = 20 µs

1 2 2.5 3

Figure 14. Resistive Switch Time, t

off

5

0

IC, COLLECTOR CURRENT (AMPS)

3

t, TIME ( s)

µ

4

2

1

TJ = 125°C
TJ = 25

°

C

IC/IB = 10

IC/IB = 5

I

Bon

= I

Boff

VCC = 300 V
PW = 20 µs

41.50.5 3.51 2 2.5 3

Figure 15. Inductive Storage Time,

tsi @ IC/IB = 5

4

2

0

410

IC, COLLECTOR CURRENT (AMPS)

3

3

1

t, TIME ( s)

µ

2

TJ = 125°C
TJ = 25

°

C

I

Bon

= I

Boff

VCC = 15 V
VZ = 300 V
LC = 200

µ

H

IC/IB = 5

Figure 16. Inductive Storage Time,

tsi @ IC/IB = 10

5

2

0

410

IC, COLLECTOR CURRENT (AMPS)

3

3

1

t, TIME ( s)

µ

2

TJ = 125°C
TJ = 25

°

C

I

Bon

= I

Boff

VCC = 15 V
VZ = 300 V
LC = 200

µ

H

4

t, TIME (ns)

Figure 17. Inductive Switching,

tc & tfi @ IC/IB = 5

600

200

0

410

IC, COLLECTOR CURRENT (AMPS)

3

400

300

100

500

2

TJ = 125°C
TJ = 25

°

C

I

Bon

= I

Boff

VCC = 15 V
VZ = 300 V
LC = 200

µ

H

Figure 18. Inductive Switching,

tfi @ IC/IB = 10

t

c

t

fi

t, TIME (ns)

400

200

0

410

IC, COLLECTOR CURRENT (AMPS)

3

300

100

2

TJ = 125°C
TJ = 25

°

C

I

Boff

= I

Bon

VCC = 15 V
VZ = 300 V
LC = 200

µ

H

BUL45D2

7

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

1500

0

420

IC, COLLECTOR CURRENT (AMPS)

Figure 19. Inductive Switching,

tc @ IC/IB = 10

5

2

2050

hFE, FORCED GAIN

15

4

3

1000

t, TIME (ns)

500

10

, STORAGE TIME (t

si

µ

s)

1 3

TJ = 125°C
TJ = 25

°

C

IC = 1 A

I

Boff

= I

Bon

VCC = 15 V
VZ = 300 V
LC = 200

µ

H

TJ = 125°C
TJ = 25

°

C

I

Bon

= I

Boff

VCC = 15 V
VZ = 300 V
LC = 200

µ

H

Figure 20. Inductive Storage Time

IC = 2 A

Figure 21. Inductive Fall Time

450

50

2082

hFE, FORCED GAIN

Figure 22. Inductive Crossover Time

1400

400

0

hFE, FORCED GAIN

1000

600

200

350

t

fi

, FALL TIME (ns)

t

c

, CROSSOVER TIME (ns)

250

150

4 6 10 12

TJ = 125°C
TJ = 25

°

C

IC = 1 A

I

Boff

= I

Bon

VCC = 15 V
VZ = 300 V
LC = 200

µ

H

I

Bon

= I

Boff

VCC = 15 V
VZ = 300 V
LC = 200

µ

H

TJ = 125°C
TJ = 25

°

C

IC = 2 A

14 16 18

IC = 2 A

800

2082 4 6 10 12 14 16 18

IC = 1 A

Figure 23. Inductive Storage Time, t

si

3000

0

310.5

IC, COLLECTOR CURRENT (AMPS)

2000

t, TIME (ns)

1000

1.5

I

Bon

= I

Boff

VCC = 15 V
VZ = 300 V
LC = 200

µ

H

2 2.5

IB1 = I

B2

IB = 50 mA

IB = 100 mA

IB = 200 mA

IB = 500 mA

Figure 24. Forward Recovery Time t

fr

360

300

210.50

IF, FORWARD CURRENT (AMP)

dI/dt = 10 A/µs
TC = 25

°

C

1.5

t

fr

, FORWARD RECOVERY TIME (ns)

340

320

3.5 4

IB = 1 A

1200

BUL45D2

8

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

Figure 25. Dynamic Saturation

Voltage Measurements

TIME

Figure 26. Inductive Switching Measurements

10

4

0

820

TIME

6

8

6

2

4

9

7

5

3

1

1 3 5

7

V

CE

0 V

I

B

90% I

B

1 µs

3 µs

dyn 1 µs

dyn 3 µs

I

B

I

C

V

clamp

t

si

t

c

t

fi

90% I

C

10% I

C

90% I

B1

Figure 27. tfr Measurements

0

1060

V

F

I

F

2 84

10% V

clamp

VFR (1.1 VF unless
otherwise specified)

V

FRM

t

fr

V

F

0.1 V

F

10% I

F

BUL45D2

9

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

Table 1. Inductive Load Switching Drive Circuit

V

(BR)CEO(sus)

L = 10 mH
RB2 =

∞

VCC = 20 Volts
I

C(pk)

= 100 mA

Inductive Switching

L = 200

µ

H
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired I

B1

RBSOA

L = 500

µ

H
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired I

B1

+15 V

1

µ

F

150

Ω

3 W

100

Ω

3 W

MPF930

+10 V

50

Ω

COMMON

–V

off

500

µ

F

MPF930

MTP8P10

MUR105

MJE210

MTP12N10

MTP8P10

150

Ω

3 W

100

µ

F

I

out

A

R

B1

R

B2

1

µ

F

IC PEAK

VCE PEAK

V

CE

I

B

IB1

IB2

Figure 28. Forward Bias Safe Operating Area

100

0.01
100010

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 29. Reverse Bias Safe Operating Area

6

3

0

800200

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

100

1

0.1

I

C

, COLLECTOR CURRENT (AMPS)

I

C

, COLLECTOR CURRENT (AMPS)

DC

5 ms 1 ms

10 µs

1 µs

2

0 V

–1.5 V

–5 V

TC ≤ 125°C
GAIN

≥

5

LC = 2 mH

300 400 700600

5

4

TYPICAL CHARACTERISTICS

500

10

1

EXTENDED SOA

BUL45D2

10

Motorola Bipolar Power Transistor Device Data

TYPICAL CHARACTERISTICS

Figure 30. Forward Bias Power Derating

1

0

16010020

TC, CASE TEMPERATURE (

°

C)

0.8

POWER DERATING FACTOR

0.6

0.4

0.2

60 140

SECOND BREAKDOWN

DERATING

40 80 120

THERMAL DERATING

There are two limitations on the power handling ability of a
transistor: average junction temperature and second break­down. Safe operating area curves indicate IC–VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate. The data of Figure 28 is based
on TC = 25°C; T

J(pk)

is variable depending on power level.
Second breakdown pulse limits are valid for duty cycles to
10% b ut must b e derated w hen TC > 2 5°C. Second
breakdown limitations do not derate the same as thermal
limitations. A llowable current at the voltages shown o n
Figure 28 may be found at any case temperature by using
the appropriate curve on Figure 30.

T

J(pk)

may be calculated from the data in Figure 31. At any
case temperatures, thermal limitations will reduce the power
that can b e handled to values less than t he limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn–off with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating
area (Figure 29). This rating is verified under clamped
conditions so t hat t he device i s never s ubjected t o an
avalanche mode.

TYPICAL THERMAL RESPONSE

Figure 31. Typical Thermal Response (Z

θJC

(t)) for BUL45D2

1

0.01

100.10.01

t, TIME (ms)

0.1

1 100 1000

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

R

θ

JC

(t) = r(t) R

θ

JC

R

θ

JC

= 2.5

°

C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t

1

T

J(pk)

– TC = P

(pk)

R

θ

JC

(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

0.05

SINGLE PULSE

0.5

0.2

0.1

0.02

BUL45D2

11

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93

J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04

B

Q

H

Z

L

V

G

N

A

K

F

1 2 3

4

D

SEATING
PLANE

–T–

C

S

T

U

R

J

BUL45D2

12

Motorola Bipolar Power Transistor Device Data

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BUL45D2/D

*BUL45D2/D*

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