Page 1
1
Motorola Bipolar Power Transistor Device Data
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The BUL44/BUL44F have an applications specific state–of–the–art die designed
for use in 220 V line operated Switchmode Power supplies and electronic light
ballasts. These high voltage/high speed transistors offer the following:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain h
FE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
• Full Characterization at 125°C
• Tight Parametric Distributions are Consistent Lot–to–Lot
• Two Package Choices: Standard TO–220 or Isolated TO–220
• BUL44F, Case 221D, is UL Recognized to 3500 V
RMS
: File #E69369
MAXIMUM RATINGS
Rating Symbol BUL44 BUL44F Unit
Collector–Emitter Sustaining Voltage V
CEO
400 Vdc
Collector–Emitter Breakdown Voltage V
CES
700 Vdc
Emitter–Base Voltage V
EBO
9.0 Vdc
Collector Current — Continuous
— Peak(1)
I
C
I
CM
2.0
5.0
Adc
Base Current — Continuous
— Peak(1)
I
B
I
BM
1.0
2.0
Adc
RMS Isolated Voltage(2) Test No. 1 Per Fig. 22a
(for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 22b
TC = 25°C) Test No. 3 Per Fig. 22c
V
ISOL
—
—
—
4500
3500
1500
Volts
Total Device Dissipation (TC = 25°C)
Derate above 25°C
P
D
50
0.4
25
0.2
Watts
W/°C
Operating and Storage Temperature TJ, T
stg
– 65 to 150 °C
THERMAL CHARACTERISTICS
Rating Symbol BUL44 BUL44F Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
2.5
62.5
5.0
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) V
CEO(sus)
400 — — Vdc
Collector Cutoff Current (VCE = Rated V
CEO
, IB = 0) I
CEO
— — 100 µAdc
Collector Cutoff Current (VCE = Rated V
CES
, VEB = 0)
(TC = 125°C)
Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C)
I
CES
—
—
—
—
—
—
100
500
100
µAdc
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) I
EBO
— — 100 µAdc
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. (continued)
(2) Proper strike and creepage distance must be provided.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL44/D
Motorola, Inc. 1995
BUL44
BUL44F
POWER TRANSISTOR
2.0 AMPERES
700 VOLTS
40 and 100 WATTS
*Motorola Preferred Device
BUL44
CASE 221A–06
TO–220AB
BUL44F
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
*
*
REV 1
Page 2
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued
(TC = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
Base–Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc)
(IC = 1.0 Adc, IB = 0.2 Adc)
V
BE(sat)
—
—
0.85
0.92
1.1
1.25
Vdc
Collector–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
(TC = 125°C)
(IC = 1.0 Adc, IB = 0.2 Adc)
(TC = 125°C)
V
CE(sat)
—
—
—
—
0.20
0.20
0.25
0.25
0.5
0.5
0.6
0.6
Vdc
DC Current Gain
(IC = 0.2 Adc, VCE = 5.0 Vdc)
(TC = 125°C)
(IC = 0.4 Adc, VCE = 1.0 Vdc)
(TC = 125°C)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
(TC = 125°C)
(IC = 10 mAdc, VCE = 5.0 Vdc)
h
FE
14
—
12
12
8.0
7.0
10
—
32
20
20
14
13
22
34
—
—
—
—
—
—
—
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) f
T
— 13 — MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) C
OB
— 38 60 pF
Input Capacitance (VEB = 8.0 V) C
IB
— 380 600 pF
1.0 µs
(TC = 125°C)
—
—
2.5
2.7
—
—
IB1 = 40 mAdc
VCC = 300 V)
3.0 µs
(TC = 125°C)
—
—
1.3
1.15
—
—
3.0 µs respectively after
rising IB1 reaches 90% of
final I
1.0 µs
(TC = 125°C)
V
CE(dsat)
—
—
3.2
7.5
—
—
Vdc
final I
B1
IB1 = 0.2 Adc
VCC = 300 V)
3.0 µs
(TC = 125°C)
—
—
1.25
1.6
—
—
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
Turn–On Time
(IC = 0.4 Adc, IB1 = 40 mAdc
IB2 = 0.2 Adc, VCC = 300 V) (TC = 125°C)
t
on
—
—
40
40
100
—
ns
Turn–Off Time
(IC = 0.4 Adc, IB1 = 40 mAdc
IB2 = 0.2 Adc, VCC = 300 V) (TC = 125°C)
t
off
—
—
1.5
2.0
2.5
—
µs
Turn–On Time (IC = 1.0 Adc, IB1 = 0.2 Adc
IB1 = 0.5 Adc, VCC = 300 V) (TC = 125°C)
t
on
—
—
85
85
150
—
ns
Turn–Off Time (IC = 1.0 Adc, IB1 = 0.2 Adc
IB2 = 0.5 Adc, VCC = 300 V) (TC = 125°C)
t
off
—
—
1.75
2.10
2.5
—
µs
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, VCC = 15 V, L = 200 µH)
Fall Time (IC = 0.4 Adc, IB1 = 40 mAdc
IB2 = 0.2 Adc) (TC = 125°C)
t
fi
—
—
125
120
200
—
ns
Storage Time
(TC = 125°C)
t
si
—
—
0.7
0.8
1.25
—
µs
Crossover Time
(TC = 125°C)
t
c
—
—
110
110
200
—
ns
Fall Time (IC = 1.0 Adc, IB1 = 0.2 Adc
IB2 = 0.5 Adc) (TC = 125°C)
t
fi
—
—
110
120
175
—
ns
Storage Time
(TC = 125°C)
t
si
—
—
1.7
2.25
2.75
—
µs
Crossover Time
(TC = 125°C)
t
c
—
—
180
210
300
—
ns
Fall Time (IC = 0.8 Adc, IB1 = 160 mAdc
IB2 = 160 mAdc) (TC = 125°C)
t
fi
70
—
—
180
170
—
ns
Storage Time
(TC = 125°C)
t
si
2.6
—
—
4.2
3.8
—
µs
Crossover Time
(TC = 125°C)
t
c
—
—
190
350
300
—
ns
Dynamic Saturation Voltage:
Determined 1.0 µs and
(IC = 0.4 Adc
(IC = 1.0 Adc
Page 3
3
Motorola Bipolar Power Transistor Device Data
r
2.0
IB, BASE CURRENT (mA)
0
1000100101.0
1.0
10
IC, COLLECTOR CURRENT (AMPS)
0.01
101.00.10.01
1.0
0.1
TYPICAL STATIC CHARACTERISTICS
100
IC, COLLECTOR CURRENT (AMPS)
1.0
101.00.10.01
10
1.0 10 100
1.0
10
100
1000
C, CAPACITANCE (pF)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
10
1.00.10.01
1.2
0.4
0.9
0.7
0.5
0.6
0.8
1.1
1.0
h
FE
, DC CURRENT GAIN
VCE = 1 V
TJ = 125°C
TJ = 25°C
100
IC, COLLECTOR CURRENT (AMPS)
1.0
101.00.10.01
10
h
FE
, DC CURRENT GAIN
VCE = 5 V
TJ = 125°C
TJ = 25°C
TJ = –20°C
V
CE
, VOLTAGE (VOLTS)
TJ = 25°C
IC = 0.2 A
0.4 A
1 A
1.5 A
2 A
IC/IB = 10
IC/IB = 5
V
CE
, VOLTAGE (VOLTS)
TJ = 25°C
TJ = 125°C
V
BE
, VOLTAGE (VOLTS)
IC/IB = 5
IC/IB = 10
Figure 1. DC Current Gain at 1 Volt Figure 2. DC Current Gain at 5 Volts
Figure 3. Collector Saturation Region Figure 4. Collector–Emitter Saturation Voltage
Figure 5. Base–Emitter Saturation Region Figure 6. Capacitance
C
IB
C
OB
TJ = 25°C
f = 1 MHz
TJ = 25°C
TJ = 125
°
C
Page 4
4
Motorola Bipolar Power Transistor Device Data
300
250
200
150
100
50
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
t, TIME (ns)
IC, COLLECTOR CURRENT (AMPS)
6.0
5.0
4.0
3.0
2.0
0
1.0
0.40.2 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
IC, COLLECTOR CURRENT (AMPS)
t, TIME (ns)
2500
2000
1500
1000
500
0
0.4 0.8 1.2 1.6 2.0 2.4
IC, COLLECTOR CURRENT (AMPS)
250
200
150
100
50
0
IC, COLLECTOR CURRENT (AMPS)
0.4 0.8 1.2 1.6 2.0 2.4
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
hFE, FORCED GAIN
2.0
1.5
1.0
0.5
5.0 6.0 7.0 8.0 9.0 10 11 12 13 14 15
200
150
100
50
IC, COLLECTOR CURRENT (AMPS)
0.4 0.8 1.2 1.6 2.0 2.4
Figure 7. Resistive Switching, t
on
Figure 8. Resistive Switching, t
off
Figure 9. Inductive Storage Time, t
si
Figure 10. Inductive Storage Time
Figure 11. Inductive Switching,
tc and tfi IC/IB = 5
Figure 12. Inductive Switching,
tc and tfi IC/IB = 10
t, TIME ( s)
µ
, STORAGE TIME (t
si
µ
s)
t, TIME (ns)
t, TIME (ns)
IC/IB = 10
IC/IB = 5
IC/IB = 5
IC/IB = 10
IC/IB = 5
IC/IB = 10
IC = 0.4 A
IC = 1 A
t
c
t
fi
t
c
t
fi
I
B(off)
= I
C/2
VCC = 300 V
PW = 20
µ
s
I
B(off)
= I
C/2
VCC = 300 V
PW = 20 µs
I
B(off)
= I
C/2
VCC = 15 V
VZ = 300 V
LC = 200
µ
H
I
B(off)
= I
C/2
VCC = 15 V
VZ = 300 V
LC = 200
µ
H
I
B(off)
= I
C/2
VCC = 15 V
VZ = 300 V
LC = 200
µ
H
I
B(off)
= I
C/2
VCC = 15 V
VZ = 300 V
LC = 200
µ
H
TJ = 25°C
TJ = 125
°
C
TJ = 25°C
TJ = 125
°
C
TJ = 25°C
TJ = 125
°
C
TJ = 25°C
TJ = 125
°
C
TJ = 25°C
TJ = 125
°
C
TJ = 25°C
TJ = 125
°
C
Page 5
5
Motorola Bipolar Power Transistor Device Data
130
120
110
100
90
80
10 11 12 13 14 15
hFE, FORCED GAIN
9.08.07.06.05.0
140
150
160
170
110
90
70
50
10 11 12 13 14 15
hFE, FORCED GAIN
9.08.07.06.05.0
130
150
170
190
0.1
1.0
10
10 100 1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.01
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
0 200 400 500
2.5
2.0
1.5
1.0
0.5
0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100 300 600 700
20 40 60 80 100
1.0
0.8
0.6
0.4
0.2
0
TC, CASE TEMPERATURE (
°
C)
POWER DERATING FACTOR
120
140 160
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC–VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of figure 15 is based on T
C
= 25°C; T
J(PK)
is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable
current at the voltages shown on figure 15 may be found at
any case temperature by using the appropriate curve on
figure 17. T
J(PK)
may be calculated from the data in figure 20
and 21. At any case temperatures, thermal limitations will
reduce the power than can be handled to values less than the
limitations imposed by second b reakdown. For inductive
loads, high voltage and current must be sustained simultaneously during turn–off with the base–to–emitter junction reverse–biased. T he safe l evel is specified a s a reverse–
biased safe operating area (Figure 16). This rating is verified
under clamped c onditions s o that t he d evice i s never
subjected to an avalanche mode.
GUARANTEED SAFE OPERATING AREA INFORMATION
Figure 13. Inductive Fall Time Figure 14. Inductive Crossover Time
Figure 15. Forward Bias Safe Operating Area Figure 16. Reverse Bias Switching Safe Operating Area
Figure 17. Forward Bias Power Derating
t
fi
, FALL TIME (ns)
t
c
, CROSSOVER TIME (ns)
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
IC = 0.4 A
IC = 1 A
I
B(off)
= I
C/2
VCC = 15 V
VZ = 300 V
LC = 200
µ
H
I
B(off)
= I
C/2
VCC = 15 V
VZ = 300 V
LC = 200
µ
H
IC = 1 A
IC = 0.4 A
10µs
1µs
50µs
1 ms
5 ms
Extended
SOA
DC (BUL44)
DC (BUL44F)
TC ≤ 125°C
GAIN
≥
4
LC = 500
µ
H
–1.5 V
–5 V
0 V
SECOND BREAK–
DOWN DERATING
THERMAL DERATING
TJ = 25°C
TJ = 125
°
C
TJ = 25°C
TJ = 125
°
C
Page 6
6
Motorola Bipolar Power Transistor Device Data
–5
–4
–3
–2
–1
0
1
2
3
4
5
0 1 2 3 4 5 6 7 8
TIME
V
CE
VOLTS
I
B
1 µs
3 µs
90% I
B
dyn 1 µs
dyn 3 µs
10
9
8
7
6
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8
TIME
I
B
I
C
t
si
V
CLAMP
10% V
CLAMP
90% IB1
10% I
C
t
c
90% I
C
t
fi
+15 V
1
µ
F
150
Ω
3 W
100
Ω
3 W
MPF930
+10 V
50
Ω
COMMON
–V
off
500
µ
F
MPF930
MTP8P10
MUR105
MJE210
MTP12N10
MTP8P10
150
Ω
3 W
100
µ
F
I
out
A
1
µ
F
IC PEAK
VCE PEAK
V
CE
I
B
IB1
IB2
V(BR)CEO(sus)
L = 10
mH
RB2 =
∞
VCC = 20 VOLTS
IC(pk) = 100 mA
INDUCTIVE SWITCHING
L = 200
µ
H
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED FOR
DESIRED IB1
RBSOA
L = 500
µ
H
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED
FOR DESIRED IB1
R
B2
R
B1
Figure 18. Dynamic Saturation Voltage Measurements Figure 19. Inductive Switching Measurements
Table 1. Inductive Load Switching Drive Circuit
Page 7
7
Motorola Bipolar Power Transistor Device Data
t, TIME (ms)
1000100101.00.10.01
0.01
0.01
0.01
0.5
0.2
0.1
0.05
0.02
1.0
r(t) TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.5
0.2
0.1
0.05
SINGLE PULSE
t, TIME (ms)
r(t) TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.01
0.1
1.0
0.01 0.1 1.0 10 100 1000
SINGLE PULSE
TYPICAL THERMAL RESPONSE
R
θ
JC(t)
= r(t) R
θ
JC
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
1
T
J(pk)
– TC = P
(pk)
R
θ
JC1
(t)
DUTY CYCLE, D = t1/t
2
t
1
t
2
P
(pk)
R
θ
JC(t)
= r
(t) Rθ
JC
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
1
T
J(pk)
– TC = P
(pk)
R
θ
JC1(t)
DUTY CYCLE, D = t1/t
2
t
1
t
2
P
(pk)
Figure 20. Typical Thermal Response (Z
θJC
(t)) for BUL44
Figure 21. Typical Thermal Response (Z
θJC
(t)) for BUL44F
Page 8
8
Motorola Bipolar Power Transistor Device Data
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
0.110
″
MIN
Figure 22a. Screw or Clip Mounting Position
for Isolation Test Number 1
*Measurement made between leads and heatsink with all leads shorted together .
CLIP
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
CLIP
0.107
″
MIN
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
0.107″ MIN
Figure 22b. Clip Mounting Position
for Isolation Test Number 2
Figure 22c. Screw Mounting Position
for Isolation Test Number 3
MOUNTING INFORMATION**
4–40 SCREW
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT
CLIP
HEATSINK
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in.lbs is sufficient to provide maximum power dissipation capability . The compression washer helps to maintain a constant
pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in.lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in.lbs without adversely affecting the package.
However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in.lbs
of mounting torque under any mounting conditions.
Figure 23a. Screw–Mounted Figure 23b. Clip–Mounted
Figure 23. Typical Mounting Techniques
for Isolated Package
**For more information about mounting power semiconductors see Application Note AN1040.
Page 9
9
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
BUL44
CASE 221A–06
TO–220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
BUL44F
CASE 221D–02
(ISOLATED TO–220 TYPE)
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
DIMAMIN MAX MIN MAX
MILLIMETERS
0.621 0.629 15.78 15.97
INCHES
B 0.394 0.402 10.01 10.21
C 0.181 0.189 4.60 4.80
D 0.026 0.034 0.67 0.86
F 0.121 0.129 3.08 3.27
G 0.100 BSC 2.54 BSC
H 0.123 0.129 3.13 3.27
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.14 1.52
N 0.200 BSC 5.08 BSC
Q 0.126 0.134 3.21 3.40
R 0.107 0.111 2.72 2.81
S 0.096 0.104 2.44 2.64
U 0.259 0.267 6.58 6.78
–B–
–Y–
G
N
D
L
K
H
A
F
Q
3 PL
1 2 3
M
B
M
0.25 (0.010) Y
SEATING
PLANE
–T–
U
C
S
J
R
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Motorola Bipolar Power Transistor Device Data
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