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HIGH VOLTAGE FAST-SWITCHING
■ SGS-THOMSONPREFERRED SALESTYPE
■ NPNTRANSISTOR
■ HIGH VOLTAGECAPABILITY
■ VERYHIGH SWITCHINGSPEED
■ FULLYCHARACTERISEDAT 125
■ LOW SPREADOF DYNAMICPARAMETERS
APPLICATIONS
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ SWITCHMODEPOWERSUPPLIES
o
C
BUL416
NPN POWER TRANSISTOR
3
2
1
DESCRIPTION
TO-220
The BUL416 is manufacturedusing high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structureto enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
INTERNAL SCHEMATIC DIAGRAM
supplies.
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE= 0) 1600 V
CES
Collector-Emitter Voltage (IB= 0) 800 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 6 A
I
C
Collect or Peak Current ( tp<5ms) 9 A
CM
Base Current 5 A
I
B
Base Peak Current (tp<5ms) 8 A
BM
Total Dissipat ion at Tc=25oC 110 W
tot
Stora ge T emperature -65 to 150
stg
Max. Oper at i ng Junction T emperatur e 150
T
j
o
C
o
C
September 1997
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BUL416
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance Junctio n- Case Max
Thermal Resistance Junction-Ambient Max
1.14
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collector Cut-off
Current (V
BE
=0)
Collector Cut-off
Current (I
B
=0)
Collector-Em it t er
=1600V
V
CE
V
=1600V Tj= 125oC
CE
V
=800V 250 µA
CE
100
500
IC= 100 mA L = 25 m H 800 V
Sust aining Voltage
V
V
CE(sat)
EBO
Emitt er-Base V oltage
=0)
(I
C
∗ Collector-Em it t er
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC C urr ent Gain IC=0.7A VCE=5V
FE
INDUCTIV E LOAD
t
s
t
f
St orage Time
Fall T ime
INDUCTIV E LOAD
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle1.5 %
s
t
f
St orage Time
Fall T ime
I
=10mA 9 V
E
IC=2A IB=0.4A
=4A IB=1.33A
I
C
IC=2A IB=0.4A
I
=4A IB=1.33A
C
=10mA VCE=5V
I
C
12
10
1.5
3
1.2
1.5
40
IC=3A IB1=1A
V
V
=-5V RBB=0Ω
BE(off)
= 200 V L = 200 µH
CL
2.3
650
IC=3A IB1=1A
V
V
T
=-5V RBB=0Ω
BE(off)
= 200 V L = 200 µH
CL
= 100oC
j
3
680
µA
µA
V
V
V
V
µs
ns
µs
ns
Safe Operating Areas Derating Curve
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BUL416
DCCurrent Gain
CollectorEmitterSaturationVoltage
DC Current Gain
BaseEmitter Saturation Voltage
InductiveFall Time
InductiveStorage Time
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Page 4
BUL416
ReverseBiased SOA RBSOAand InductiveLoad Switching Test
Circuit
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
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TO-220 MECHANICALDATA
BUL416
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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BUL416
Informationfurnished isbelieved to be accurate and reliable.However,SGS-THOMSON Microelectronics assumes no responsabilityfor the
consequencesof useof such information norfor anyinfringementof patentsor otherrights of thirdparties which may results from its use.No
license is grantedbyimplicationor otherwise underanypatentor patentrights ofSGS-THOMSONMicroelectronics.Specificationsmentioned
in thispublicationare subject to change without notice.This publicationsupersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorizedfor useascriticalcomponents in life support devices or systemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics - Printed in Italy- All RightsReserved
Australia- Brazil - Canada- China- France - Germany- Hong Kong - Italy - Japan- Korea -Malaysia -Malta - Morocco - The Netherlands-
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom- U.S.A
SGS-THOMSON MicroelectronicsGROUPOF COMPANIES
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