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HIGH VOLTAGE FAST-SWITCHING
■ SGS-THOMSONPREFERRED SALESTYPE
■ NPNTRANSISTOR
■ HIGH VOLTAGECAPABILITY
■ LOW SPREADOF DYNAMICPARAMETERS
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
■ FULLYCHARACTERIZED AT 125
■ LARGERBSOA
■ FULLYMOLDED ISOLATEDPACKAGE
■ 2000V DC ISOLATION(U.L. COMPLIANT)
o
C
BUL310FP
NPN POWER TRANSISTOR
3
2
1
APPLICATIONS
■ ELECTRONICBALLASTSFOR
TO-220FP
FLUORESCENT LIGHTING
■ FLYBACKAND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM
The BUL310FP is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaininga wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
I
I
P
T
Collector-Emitter Voltage ( VBE= 0) 1000 V
CES
Collect or- E m itter Volta ge (I B = 0) 500 V
CEO
Emitter-Base Voltage (I C = 0) 9 V
EBO
Collect or Current 5 V
I
C
Collect or Peak Current (tp<5 ms) 10 A
CM
Base Current 3 A
I
B
Base Peak Curr ent ( tp<5 ms) 4 A
BM
Tot al Dissipa t ion at Tc = 25oC36W
tot
Storage Temperature -65 to 1 50
stg
Max. O perating Junc t i on T emperature 150
T
j
o
C
o
C
April 1998
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BUL310FP
THERMAL DATA
R
thj-case
R
thj- amb
Ther mal Resistance Ju nct io n- Case Max
Thermal Resistance Junction-Ambient Max
3.5
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collector C ut -off
Current (V
BE
=0)
Collector C ut -off
Current (I
B
=0)
Collector-E mitter
=1000V
V
CE
V
=1000V Tj= 125oC
CE
V
=400V 250 µA
EC
100
500
IC= 100 mA L= 25 mH 500 V
Sust aining V olt ag e
V
V
CE(sat)
EBO
Emitt er-Base V oltage
=0)
(I
C
∗ Collector-E mitter
Saturation Voltage
V
∗ Base-Emitt er
BE(sat )
Saturation Voltage
h
∗ DC C urr ent Gain IC=10mA VCE=5V
FE
INDUCTI V E LOA D
t
s
t
f
St orage Time
Fall T ime
INDUCTI V E LOA D
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
s
t
f
St orage Time
Fall T ime
I
=10mA 9 V
E
IC=1A IB=0.2A
=2A IB=0.4A
I
C
=3A IB=0.6A
I
C
IC=1A IB=0.2A
=2A IB=0.4A
I
C
I
=3A IB=0.6A
C
0.5
0.7
1.1
1
1.1
1.2
10
=3A VCE=2.5V
I
C
10
IC=2A IB1=0.4A
V
V
=-5V RBB=0Ω
BE(of f)
= 250 V L = 200 µ H
CL
1.2
80
1.9
160
IC=2A IB1=0.4A
V
V
T
=-5V RBB=0Ω
BE(of f)
= 250 V L = 2 00 µ H
CL
= 125oC
j
1.8
150
µA
µA
V
V
V
V
V
V
µs
ns
µs
ns
Safe Operating Areas DeratingCurve
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BUL310FP
DCCurrent Gain
CollectorEmitter SaturationVoltage
DC Current Gain
BaseEmitter Saturation Voltage
InductiveFall Time
InductiveStorage Time
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Page 4
BUL310FP
ReverseBiased SOA RBSOA and InductiveLoad SwitchingTest
Circuit
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
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Page 5
TO-220FP MECHANICALDATA
BUL310FP
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L4
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BUL310FP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from itsuse. No
license is granted by implication or otherwise under any patent orpatent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts are not authorized for useas criticalcomponentsin life support devices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom -U.S.A
6/6
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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