Page 1
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronics PREFERRED
SALESTYPE
■ NPNTRANSISTOR
■ HIGH VOLTAGECAPABILITY
■ LOW SPREADOF DYNAMIC PARAMETERS
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
■ FULLYCHARACTERISEDAT 125
■ LARGERBSOA
o
C
BUL310
NPN POWER TRANSISTOR
3
2
1
APPLICATIONS
■ ELECTRONICBALLASTSFOR
TO-220
FLUORESCENT LIGHTING
■ FLYBACKAND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
INTERNAL SCHEMATIC DIAGRAM
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaininga wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Val u e Uni t
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE= 0) 1000 V
CES
Collector-Em it t e r V o lt a ge ( IB = 0) 500 V
CEO
Emitter-Base Voltage (IC = 0) 9 V
EBO
Collector Curren t 5 V
I
C
Collector Peak Current (tp<5 ms) 10 A
CM
Base Curre nt 3 A
I
B
Base Peak Current ( tp<5 ms) 4 A
BM
Tot al Diss ip at i on at Tc = 25oC75W
tot
Sto rage T emperatur e -65 to 150
stg
Max. Operating Junction Te mperature 150
T
j
o
C
o
C
January 1999
1/6
Page 2
BUL310
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resist an c e Junction-Case Max
Ther mal Resist an c e Junction-Ambient Max
1.65
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Condition s Min. Typ. Max. Un it
I
CES
I
CEO
V
CEO(sus)
Collec t or Cut -off
Current (V
BE
=0)
Collec t or Cut -off
Current (I
B
=0)
Collec t or -Emitt er
V
= 1000 V
CE
= 1000 V Tj=125oC
V
CE
V
= 400 V 250 µA
EC
100
500
IC= 100 mA L= 25 mH 500 V
Sust aining Vo lt age
V
V
CE(sat)
EBO
Emitter-Base Voltage
=0)
(I
C
∗ Collector-E mitter
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC C urrent Gain IC=10mA VCE=5V
FE
INDUCTIV E LO AD
t
s
t
f
Storage Time
Fall Time
INDUCTIV E LO AD
t
∗
Pulsed: Pulse duration = 300 µs,duty cycle1.5 %
s
t
f
Storage Time
Fall Time
I
=10mA 9 V
E
IC=1A IB=0.2A
=2A IB=0.4A
I
C
=3A IB=0.6A
I
C
IC=1A IB=0.2A
=2A IB=0.4A
I
C
=3A IB=0.6A
I
C
0.5
0.7
1.1
1
1.1
1.2
10
=3A VCE=2.5V
I
C
10
IC=2A IB1=0.4A
V
V
=-5V RBB=0Ω
BE(off )
=250V L=200µH
CL
1.2
80
1.9
160
IC=2A IB1=0.4A
V
V
T
=-5V RBB=0Ω
BE(off )
=250V L=200µH
CL
=125oC
j
1.8
150
µA
µA
V
V
V
V
V
V
µs
ns
µs
ns
Safe Operating Areas DeratingCurve
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Page 3
BUL310
DCCurrent Gain
CollectorEmitterSaturationVoltage
DC Current Gain
BaseEmitterSaturationVoltage
InductiveFall Time
InductiveStorage Time
3/6
Page 4
BUL310
ReverseBiased SOA RBSOAand Inductive Load Switching Test
Circuit
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
4/6
Page 5
TO-220 MECHANICAL DATA
BUL310
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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BUL310
Information furnished isbelieved tobe accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise underany patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademarkof STMicroelectronics
1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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