Page 1
HIGH VOLTAGE FAST-SWITCHING
■ SGS-THOMSONPREFERRED SALESTYPE
■ NPNTRANSISTOR
■ HIGH VOLTAGECAPABILITY
■ VERYHIGH SWITCHINGSPEED
■ HIGH OPERATINGJUNCTION
TEMPERATURE
■ HIGH RUGGEDNESS
BUL216
NPN POWER TRANSISTOR
APPLICATIONS
■ ELECTRONICBALLASTSFOR
3
2
1
FLUORESCENT LIGHTING
■ SWITCHMODE POWER SUPPLIES
TO-220
DESCRIPTION
The BUL216 is manufacturedusing high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structureto enhance switching speeds.
The BUL series is designed for use in lighting
INTERNAL SCHEMATIC DIAGRAM
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE= 0) 1600 V
CES
Collector-Emitter Voltage (IB= 0) 800 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 4 A
I
C
Collect or Peak Current ( tp<5ms) 6 A
CM
Base Current 2 A
I
B
Base Peak Current (tp<5ms) 4 A
BM
Total Dissipat ion at Tc=25oC90W
tot
Stora ge T emperature -65 to 150
stg
Max. Oper at i ng Junction Temperature 150
T
j
o
C
o
C
September 1997
1/6
Page 2
BUL216
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance Ju nc t io n- Case Max
Thermal Resistance Junction-Ambient Max
1.39
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collector Cut-off
Current (V
BE
=0)
Collector Cut-off
Current (I
B
=0)
Collector-Emit t er
=1600V
V
CE
V
=1600V Tj= 125oC
CE
V
=800V 250 µA
CE
100
500
IC= 100 mA L = 25 m H 800 V
Sust aining V olt ag e
V
V
CE(sat)
EBO
Emitt er-Base V oltage
=0)
(I
C
∗ Collector-Emit t er
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC C urr ent Gain IC=0.4A VCE=5V
FE
INDUCTIVE LOAD
t
s
t
f
St orage Time
Fall T ime
INDUCTIVE LOAD
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
s
t
f
St orage Time
Fall T ime
I
=10mA 9 V
E
IC=1A IB=0.2A
=2A IB=0.66A
I
C
IC=1A IB=0.2A
I
=2A IB=0.66A
C
=10mA VCE=5V
I
C
12
10
1
3
1.2
1.2
40
IC=1.5A IB1=0.5A
V
V
=-5V RBB=0Ω
BE(off)
= 250 V L = 200 µH
CL
2.1
450
3.3
720
IC=1.5A IB1=0.5A
V
V
T
=-5V RBB=0Ω
BE(off)
= 250 V L = 200 µH
CL
= 100oC
j
3
600
µA
µA
V
V
V
V
µs
ns
µs
ns
Safe Operating Areas Derating Curve
2/6
Page 3
BUL216
DCCurrent Gain
CollectorEmitter SaturationVoltage
DC Current Gain
BaseEmitter Saturation Voltage
InductiveFall Time
InductiveStorage Time
3/6
Page 4
BUL216
InductiveFall Time InductiveStorage Time
ReverseBiased SOA RBSOAand Inductive Load SwitchingTest
Circuits
4/6
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
Page 5
TO-220 MECHANICALDATA
BUL216
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
5/6
Page 6
BUL216
Informationfurnished is believedto be accurate and reliable.However,SGS-THOMSONMicroelectronicsassumes no responsabilityfor the
consequencesof use of such information nor for any infringementof patents or other rightsof third parties which may results fromits use.No
license is granted by implicationor otherwise under anypatentor patentrightsofSGS-THOMSONMicroelectronics.Specificationsmentioned
in thispublication are subject to change without notice. This publicationsupersedes and replacesall information previously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorizedfor useas criticalcomponents inlife supportdevicesor systemswithout express
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy- All Rights Reserved
Australia- Brazil - Canada- China- France - Germany- Hong Kong - Italy- Japan- Korea - Malaysia -Malta - Morocco - The Netherlands-
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand- UnitedKingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
...
6/6
Loading...