Page 1
HIGH VOLTAGE FAST-SWITCHING
■ SGS-THOMSONPREFERRED SALESTYPE
■ HIGH VOLTAGECAPABILITY
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ LOW BASE-DRIVEREQUIREMENTS
■ VERYHIGH SWITCHINGSPEED
■ FULLYCHARACTERISEDAT 125
o
C
BUL213
NPN POWER TRANSISTOR
APPLICATIONS
■ ELECTRONICBALLASTSFOR
3
2
1
FLUORESCENT LIGHTING
■ SWITCHMODE POWER SUPPLIES
TO-220
DESCRIPTION
The BUL213 is manufacturedusing high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structureto enhance switching speeds.
The BUL series is designed for use in lighting
INTERNAL SCHEMATIC DIAGRAM
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE= 0) 1300 V
CES
Collector-Emitter Voltage (IB= 0) 600 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 3 A
I
C
Collect or Peak Current ( tp<5ms) 6 A
CM
Base Current 2 A
I
B
Base Peak Current (tp<5ms) 4 A
BM
Total Dissipat ion at Tc=25oC60W
tot
Stora ge T emper at u re -65 to 150
stg
Max. Oper at i ng Junction Temperature 150
T
j
o
C
o
C
April 1997
1/6
Page 2
BUL213
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance Ju nc t io n-Cas e Max
Thermal Resistance Junction-Ambient Max
2.08
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collector C ut -off
Current (V
BE
=0)
Collector C ut -off
Current (I
B
=0)
Collector-Emit t er
=1300V
V
CE
V
=1300V Tj= 125oC
CE
V
=600V 250 µA
CE
100
500
IC= 100 mA L = 25 m H 600 V
Sust aining V olt ag e
V
V
CE(sat)
EBO
Emitt er-Base V oltage
=0)
(I
C
∗ Collector-Emit t er
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC C urr ent Gain IC=0.35A VCE=3V
FE
INDUCTIVE LOAD
t
s
t
f
St orage Time
Fall T ime
INDUCTIVE LOAD
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
s
t
f
St orage Time
Fall T ime
I
=10mA 9 V
E
IC=0.5A IB=0.1A
=1A IB=0.2A
I
C
IC=0.5A IB=0.1A
I
=1A IB=0.2A
C
=10mA VCE=5V
I
C
16
12
0.5
0.9
1.2
1.5
36
IC=1A VCL= 400 V
=0.2A IB2=-0.4A
I
B1
L = 200 µ H
4
2506420
IC=1A VCL= 400 V
=0.2A IB2=-0.4A
I
B1
L = 200 µ HT
= 125oC
j
5.2
380
µA
µA
V
V
V
V
µs
ns
µs
ns
2/6
Page 3
BUL213
Safe Operating Areas
DCCurrent Gain
DeratingCurve
DC Current Gain
CollectorEmitter SaturationVoltage
BaseEmitter Saturation Voltage
3/6
Page 4
BUL213
ReverseBiased SOA IRBSOAand InductiveLoad SwitchingTest
Circuits
1) Fast electronic switch
2) Non-induc t ive Resistor
3) Fastrecovery rectifier
4/6
Page 5
TO-220 MECHANICAL DATA
BUL213
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
H2
G
F
C
D1
L2
Dia.
L5
L7
L6
L9
P011C
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Page 6
BUL213
Informationfurnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such information nor for any infringementof patents or other rights of third parties which may results fromits use.No
license is granted byimplicationor otherwiseunder anypatentor patentrights ofSGS-THOMSONMicroelectronics.Specificationsmentioned
in thispublication are subject to change without notice. This publicationsupersedesand replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorizedfor use ascritical componentsin lifesupportdevices or systemswithout express
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia- Brazil - Canada- China- France- Germany- Hong Kong - Italy - Japan- Korea -Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom- U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
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