Datasheet BUL146F, BUL146 Datasheet (ON Semiconductor)

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Page 1

Motorola Bipolar Power Transistor Device Data

  

SWITCHMODE



NPN Bipolar Power Transistor For Switching Power Supply Applications

The BUL146/BUL146F have an applications specific state–of–the–art die designed for use in fluorescent electric lamp ballasts to 130 Watts and in Switchmode Power supplies for all t ypes of electronic equipment. These h igh voltage/high speed transistors offer the following:

• Improved Efficiency Due to Low Base Drive Requirements:

— High and Flat DC Current Gain — Fast Switching — No Coil Required in Base Circuit for Turn–Off (No Current Tail)

• Full Characterization at 125°C

• Parametric Distributions are Tight and Consistent Lot–to–Lot

• Two Package Choices: Standard TO–220 or Isolated TO–220

• BUL146F, Isolated Case 221D, is UL Recognized to 3500 V

RMS

: File #E69369

MAXIMUM RATINGS

Rating Symbol BUL146 BUL146F Unit

Collector–Emitter Sustaining Voltage V

CEO

400 Vdc

Collector–Emitter Breakdown Voltage V

CES

700 Vdc

Emitter–Base Voltage V

EBO

9.0 Vdc

Collector Current — Continuous

— Peak(1)

6.0 15

Adc

Base Current — Continuous

— Peak(1)

4.0

8.0

Adc

RMS Isolated Voltage(2) Test No. 1 Per Fig. 22a

(for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 22b TC = 25°C) Test No. 3 Per Fig. 22c

ISOL

— — —

4500 3500 1500

Total Device Dissipation (TC = 25°C)

Derate above 25°C

100

0.8

0.32

Watts

W/°C

Operating and Storage Temperature TJ, T

stg

– 65 to 150 °C

THERMAL CHARACTERISTICS

Rating Symbol BUL44 BUL44F Unit

Thermal Resistance — Junction to Case

— Junction to Ambient

θJC

θJA

1.25

62.5

3.125

62.5

°C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

260 °C

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) V

CEO(sus)

400 — — Vdc

Collector Cutoff Current (VCE = Rated V

CEO

, IB = 0) I

CEO

— — 100 µAdc

Collector Cutoff Current (VCE = Rated V

CES

, VEB = 0)

(TC = 125°C)

Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C)

CES

— — —

100 500 100

µAdc

Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) I

EBO

— — 100 µAdc

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. (continued) (2) Proper strike and creepage distance must be provided.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BUL146/D

 Motorola, Inc. 1995

BUL146

BUL146F

POWER TRANSISTOR

6.0 AMPERES 700 VOLTS

40 and 100 WATTS

*Motorola Preferred Device

BUL146

CASE 221A–06

TO–220AB

BUL146F

CASE 221D–02

ISOLATED TO–220 TYPE

UL RECOGNIZED

REV 1

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Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS — continued

(TC = 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

ON CHARACTERISTICS

Base–Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc)

Base–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc)

BE(sat)

— —

0.82

0.93

1.1

1.25

Vdc

Collector–Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc)

(TC = 125°C)

Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc)

(TC = 125°C)

CE(sat)

— — — —

0.22

0.20

0.30

0.5

0.7

Vdc

DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc)

(TC = 125°C)

DC Current Gain (IC = 1.3 Adc, VCE = 1.0 Vdc)

(TC = 125°C)

DC Current Gain (IC = 3.0 Adc, VCE = 1.0 Vdc)

(TC = 125°C)

DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)

14 — 12 12

8.0

7.0 10

— 30 20 20 13 12 20

34 — — — — — —

—

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) f

— 14 — MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) C

— 95 150 pF

Input Capacitance (VEB = 8.0 V) C

— 1000 1500 pF

(IC = 1.3 Adc

1.0 µs

(TC = 125°C)

— —

2.5

6.5

— —

Dynamic Saturation Voltage:

Determined 1.0 µs and

3.0 µs respectively after

IB1 = 300 mAdc VCC = 300 V)

3.0 µs

(TC = 125°C)

— —

0.6

2.5

— —

3.0 µs respectively after rising IB1 reaches 90% of final I

(IC = 3.0 Adc

1.0 µs

(TC = 125°C)

CE(dsat)

— —

3.0

7.0

— —

(see Figure 18)

IB1 = 0.6 Adc VCC = 300 V)

3.0 µs

(TC = 125°C)

— —

0.75

1.4

— —

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)

Turn–On Time

(IC = 1.3 Adc, IB1 = 0.13 Adc IB2 = 0.65 Adc, VCC = 300 V) (TC = 125°C)

— —

100

200

—

Turn–Off Time

(TC = 125°C)

off

— —

1.35

1.90

2.5 —

µs

Turn–On Time (IC = 3.0 Adc, IB1 = 0.6 Adc

IB1 = 1.5 Adc, VCC = 300 V) (TC = 125°C)

— —

100

150

—

Turn–Off Time

(TC = 125°C)

off

— —

1.7

2.1

2.5 —

µs

SWITCHING CHARACTERISTICS: Inductive Load (V

clamp

= 300 V, VCC = 15 V, L = 200 µH)

Fall Time (IC = 1.3 Adc, IB1 = 0.13 Adc

IB2 = 0.65 Adc) (TC = 125°C)

— —

115 120

200

—

Storage Time

(TC = 125°C)

— —

1.35

1.75

2.5 —

µs

Crossover Time

(TC = 125°C)

— —

200 210

350

—

Fall Time (IC = 3.0 Adc, IB1 = 0.6 Adc

IB2 = 1.5 Adc) (TC = 125°C)

— —

100

150

—

Storage Time

(TC = 125°C)

— —

1.75

2.25

2.5 —

µs

Crossover Time

(TC = 125°C)

— —

175 200

300

—

Fall Time (IC = 3.0 Adc, IB1 = 0.6 Adc

IB2 = 0.6 Adc) (TC = 125°C)

80 —

—

210

180

—

Storage Time

(TC = 125°C)

2.6 —

—

4.5

3.8 —

µs

Crossover Time

(TC = 125°C)

— —

230 400

350

—

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Motorola Bipolar Power Transistor Device Data

, DC CURRENT GAIN

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

C, CAPACITANCE (pF)

0.01

100

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

, DC CURRENT GAIN

Figure 2. DC Current Gain @ 5 Volts

, VOLTAGE (V)

Figure 3. Collector Saturation Region Figure 4. Collector–Emitter Saturation Voltage

Figure 5. Base–Emitter Saturation Region Figure 6. Capacitance

1 10

100

0.01 0.1 1 10

0.01 IB, BASE CURRENT (mA)

0.01

0.01 IC COLLECTOR CURRENT (AMPS)

0.1

1.2

0.8

0.4

0.01 IC, COLLECTOR CURRENT (AMPS)

0.1 1 10

1000

100

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1 1000

0.1

1 10

10000

0.1

0.1 1 10

10 100

TJ = 25°C

TJ = – 20°C

VCE = 1 V

TJ = 125°C

TJ = 25°C

TJ = – 20°C

VCE = 5 V

IC = 1 A 2 A 3 A

, VOLTAGE (V)

IC/IB = 10

IC/IB = 5

TJ = 25°C TJ = 125

, VOLTAGE (V)

1.1

0.9

0.7

0.6

TJ = 25°C

TJ = 125°C

IC/IB = 5 IC/IB = 10

5 A 6 A

TJ = 25°C

0.5

TYPICAL STATIC CHARACTERISTICS

TJ = 25°C f = 1 MHz

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Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Resistive Switching, t

IC COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

1000

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Resistive Switching, t

off

t, TIME (ns)

Figure 9. Inductive Storage Time, t

Figure 10. Inductive Storage Time, tsi(hFE)

Figure 11. Inductive Switching, tc and t

IC/IB = 5

Figure 12. Inductive Switching, tc and t

IC/IB = 10

800

4 8

4000

2000

2500

0 3

hFE, FORCED GAIN

250

IC, COLLECTOR CURRENT (AMPS)

4 7 8

200

150

1500

6 7

250

100

2 5 8

TJ = 25°C

B(off)

= IC/2 VCC = 300 V PW = 20 µs

IC/IB = 5

, STORAGE TIME (ns)

IC = 3 A

IC = 1.3 A

200

150

100

600

400

200

IC/IB = 5 IC/IB = 10

B(off)

= IC/2 VCC = 300 V PW = 20 µs

IC/IB = 10

0 4 82 6

500

1000

1500

2500

3000

3500

t, TIME (ns)

1 3 4 6 7

500

1000

2000

B(off)

= IC/2 VCC = 15 V VZ = 300 V LC = 200

TJ = 25°C TJ = 125

4000

2000

500

1000

1500

2500

3000

3500

B(off)

= IC/2 VCC = 15 V VZ = 300 V LC = 200

1 2 3 5 6

t, TIME (ns)

B(off)

= IC/2 VCC = 15 V VZ = 300 V LC = 200

TJ = 25°C TJ = 125

0 4 7 81 2 3 5 6

t, TIME (ns)

B(off)

= IC/2 VCC = 15 V VZ = 300 V LC = 200

TJ = 25°C TJ = 125

IC/IB = 10

IC/IB = 5

TJ = 25°C TJ = 125

TYPICAL SWITCHING CHARACTERISTICS

(IB2 = IC/2 for all switching)

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Motorola Bipolar Power Transistor Device Data

, COLLECTOR CURRENT (AMPS)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

hFE, FORCED GAIN

, CROSS–OVER TIME (ns)

130

hFE, FORCED GAIN

Figure 13. Inductive Fall Time

, FALL TIME (ns)

Figure 14. Inductive Cross–Over Time

, COLLECTOR CURRENT (AMPS)

Figure 15. Forward Bias Safe Operating Area Figure 16. Reverse Bias Switching Safe Operating Area

Figure 17. Forward Bias Power Derating

110

5 15

250

150

100

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0 200

1,0

0,8

0,2

0,0

TC, CASE TEMPERATURE (

80 140 160

0.01

600 800

100 1000

DC (BUL146)

5 ms

BE(off)

TC ≤ 125°C IC/IB

≥

LC = 500

POWER DERATING FACTOR

0,6

0,4

6 7 8 9 10 11 12 13 14

100

120

IC = 3 A

IC = 1.3 A

B(off)

= IC/2 VCC = 15 V VZ = 300 V LC = 200

TJ = 25°C TJ = 125

3 5 154 6 7 8 9 10 11 12 13 14

200

100

IC = 3 A

IC = 1.3 A

B(off)

= IC/2 VCC = 15 V VZ = 300 V LC = 200

TJ = 25°C TJ = 125

0.1

1 ms 10 µs 1 µs

400

0 V

–1, 5 V

– 5 V

40 60 100 120

SECOND BREAKDOWN

DERATING

THERMAL DERATING

DC (BUL146F)

GUARANTEED SAFE OPERATING AREA INFORMATION

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC– VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25°C; T

J(pk)

is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. T

J(pk)

may be calculated from the data in Figure 20 and 21. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn–off with the base–to–emitter junction reverse–biased. The safe level is specified as a reverse–biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

TYPICAL SWITCHING CHARACTERISTICS

(IB2 = IC/2 for all switching)

EXTENDED SOA

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Motorola Bipolar Power Transistor Device Data

–5

–4

–3

–2

–1

0 1 2 3 4 5 6 7 8

Figure 18. Dynamic Saturation Voltage Measurements

TIME

VOLTS

Figure 19. Inductive Switching Measurements

1 µs

3 µs

90% I

dyn 1 µs

dyn 3 µs

9 8 7 6 5 4 3 2 1 0

0 1 2 3 4 5 6 7 8

TIME

CLAMP

10% V

CLAMP

90% IB1

10% I

90% I

Table 1. Inductive Load Switching Drive Circuit

+15 V

150

Ω

3 W

100

Ω

3 W

MPF930

+10 V

Ω

COMMON

–V

off

500

MPF930

MTP8P10

MUR105

MJE210

MTP12N10

MTP8P10

150

Ω

3 W

100

out

IC PEAK

VCE PEAK

IB1

IB2

V(BR)CEO(sus)

L = 10

RB2 =

∞

VCC = 20 VOLTS IC(pk) = 100 mA

INDUCTIVE SWITCHING

L = 200

H RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1

RBSOA

L = 500

H RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1

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Motorola Bipolar Power Transistor Device Data

0.01 t, TIME (ms)

Figure 20. Typical Thermal Response (Z

θJC

(t)) for BUL146

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

(t) = r(t) R

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t

J(pk)

– TC = P

(pk)

(t)

(pk)

DUTY CYCLE, D = t1/t

0.2

0.02

0.1

D = 0.5

SINGLE PULSE

0.01 0.1 1 10 100 1000

0.1

0.01

t, TIME (ms)

Figure 21. Typical Thermal Response (Z

θJC

(t)) for BUL146F

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

(t) = r(t) R

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

J(pk)

– TC = P

(pk)

(t)

(pk)

DUTY CYCLE, D = t1/t

0.2

0.02

0.1

D = 0.5

SINGLE PULSE

0.01 0.1 1 10 100 100000

0.1

1000 10000

0.05

TYPICAL THERMAL RESPONSE

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Motorola Bipolar Power Transistor Device Data

TEST CONDITIONS FOR ISOLATION TESTS*

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

0.110

″

MIN

Figure 22a. Screw or Clip Mounting Position

for Isolation Test Number 1

*Measurement made between leads and heatsink with all leads shorted together .

CLIP

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

CLIP

0.107

″

MIN

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

0.107″ MIN

Figure 22b. Clip Mounting Position

for Isolation Test Number 2

Figure 22c. Screw Mounting Position

for Isolation Test Number 3

MOUNTING INFORMATION**

4–40 SCREW

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

NUT

CLIP

HEATSINK

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in.lbs is sufficient to provide maximum power dissipation capability . The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in.lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in.lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in.lbs of mounting torque under any mounting conditions.

Figure 23a. Screw–Mounted Figure 23b. Clip–Mounted

Figure 23. Typical Mounting Techniques

for Isolated Package

**For more information about mounting power semiconductors see Application Note AN1040.

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Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

BUL44

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73

G 0.095 0.105 2.42 2.66

H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33

Q 0.100 0.120 2.54 3.04

R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 ––– 1.15 ––– Z ––– 0.080 ––– 2.04

1 2 3

SEATING PLANE

–T–

R J

BUL44F

CASE 221D–02

(ISOLATED TO–220 TYPE)

ISSUE D

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

DIMAMIN MAX MIN MAX

MILLIMETERS

0.621 0.629 15.78 15.97

INCHES

B 0.394 0.402 10.01 10.21 C 0.181 0.189 4.60 4.80 D 0.026 0.034 0.67 0.86

F 0.121 0.129 3.08 3.27 G 0.100 BSC 2.54 BSC H 0.123 0.129 3.13 3.27

J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27

L 0.045 0.060 1.14 1.52 N 0.200 BSC 5.08 BSC Q 0.126 0.134 3.21 3.40 R 0.107 0.111 2.72 2.81 S 0.096 0.104 2.44 2.64 U 0.259 0.267 6.58 6.78

–B–

–Y–

G N

3 PL

1 2 3

0.25 (0.010) Y

SEATING PLANE

–T–

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Motorola Bipolar Power Transistor Device Data

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Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

BUL146/D

*BUL146/D*

◊