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HIGH VOLTAGE FAST-SWITCHING
■ INTEGRATED ANTISATURATIONAND
PROTECTIONNETWORK
■ INTEGRATED ANTIPARALLEL COLLECTOR
EMITTER DIODE
■ HIGH VOLTAGE CAPABILITY
■ LOW SPREADOF DYNAMIC PARAMETERS
■ MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
■ VERYHIGH SWITCHING SPEED
■ ARCINGTEST SELFPROTECTED
BUL1403ED
NPN POWER TRANSISTOR
3
2
1
APPLICATIONS
■ 2/4 LAMPSELECTRONICBALLASTFOR
FLUORESCENT LIGHTING277 V
AC
TO-220
PUSH-PULL CONFIGURATION
DESCRIPTION
The BUL1403ED is a new device, designed for
fluorescent electronic ballast 277 V
push-pull
AC
INTERNAL SCHEMATIC DIAGRAM
applications(up to 4 lamps).
This device, it can be used without baker clamp
and transil protection, reducing greatly the
componentcount.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collect or-Emitter Volt age (VBE= 0 ) 1400 V
CES
Collect or-Emitter Volt age (IB= 0 ) 650 V
CEO
Emitter-Base Voltage (IC=0) 7 V
EBO
Collect or Current 3 A
I
C
Collect or Peak Cu r rent (tp<5ms) 6 A
CM
Base Current 2 A
I
B
Base P eak Current (tp<5ms) 4 A
BM
Tot al Diss ipa t io n at Tc=25oC80W
tot
Storage Temperature -65 to 150
stg
Max. Operat ing Junctio n Tempe rature 150
T
j
o
C
o
C
June 1999
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Page 2
BUL1403ED
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resist ance Junctio n-Case Max
Ther mal Resist ance Junctio n-A mbient Max
1.56
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Un it
I
I
CES
EBO
Collec t or Cut -off
Current (V
BE
=0)
Base-Emi tter Lea kage
V
= 1400 V 1 mA
CE
VEB=7V 100 µA
Current
V
CEO(sus)
Collec t or -Emit t er
I
=10mA L=25mH 650 V
C
Sust aining Voltage
=0)
(I
B
∗ Collect or- Emit t er
V
CE(sat)
Saturation Voltage
V
∗ Base- Emi tter
BE(sat)
Saturation Voltage
h
∗ DC Curr ent Gain IC=5mA VCE=10V
FE
IC=0.5A IB=0.05A
=0.25A IB=0.025A
I
C
IC=0.5A IB=0.1A
=1A IB=0.1A
I
C
=2A IB=0.4A
I
C
=0.4A VCE=3V
I
C
=0.8A VCE=5V
I
C
18
15
4
2.5
1.5
1.0
1.1
1.2
RESI STIVE LOAD
t
t
E
Delay Tim e
d
t
Rise T ime
r
Storage Ti me
s
t
Fall Time
f
Repe ti tive Avalanche
sb
=0.5A VCC=125V
I
C
=0.05A IB2= -0.25 A
I
B1
D.C. = 2% P.W . = 300 µs
L=2mH 6 mJ
0.3
0.8
1.2
0.35
Energy
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
V
V
V
V
V
µs
µs
µs
µs
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Page 3
BUL1403ED
Safe Operating Areas
DCCurrent Gain
DeratingCurve
DC Current Gain
CollectorEmitterSaturationVoltage
BaseEmitter Saturation Voltage
3/6
Page 4
BUL1403ED
ReverseBiasedSOA
ResistiveLoad Switching Test Circuit
EnergyRatingTest Circuit
4/6
Vin
Tp
L=2mH
Rg
Vcc
C
T1
TUT
Vbb
+
SC12620
Page 5
TO-220 MECHANICAL DATA
BUL1403ED
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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BUL1403ED
Information furnished is believed to beaccurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise underany patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – AllRights Reserved
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