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HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronicsPREFERRED
SALESTYPE
■ NPNTRANSISTOR
■ HIGH VOLTAGECAPABILITY
■ LOW SPREADOF DYNAMIC PARAMETERS
■ MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
■ FULLYCHARACTERIZED AT 125
APPLICATIONS
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ FLYBACKAND FORWARDSINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUL138 is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhanceswitchingspeeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
o
C
BUL138
NPN POWER TRANSISTOR
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
May 1999
Collect or-Emit t e r V oltage (VBE= 0 ) 800 V
CES
Collect or-Emit t e r V oltage (IB= 0 ) 400 V
CEO
Emitter-Base Vol tage (IC=0) 9 V
EBO
Collect or Current 5 A
I
C
Collect or Peak Cu rr ent (tp<5ms) 10 A
CM
Base Current 2 A
I
B
Base P eak Cu rrent (tp<5ms) 4 A
BM
Tot al Dissipa t ion at Tc=25oC80W
tot
Storage Temperature -65 to 150
stg
Max. Ope r ating Junct io n Tempe r ature 150
T
j
o
C
o
C
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Page 2
BUL138
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resist an c e Junction-case Max
Ther mal Resist an c e Junction-ambie nt Max
1.56
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
I
CES
I
CEO
V
CEO(sus)
Collec t or Cut -off
Current (V
BE
=0)
Collec t or Cut -off
Current (I
B
=0)
Collec t or -Emitt er
V
=800V
CE
=800V Tj=125oC
V
CE
V
= 400 V 250 µA
CE
100
500
IC= 100 m A L = 25 mH 400 V
Sust aining V o lt age
V
EBO
V
CE(sat)
V
BE(sat)
h
FE
t
t
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Emitter-Base Voltage IE=10mA 9 V
∗ Collector-E mitter
Saturation Voltage
∗ Base-Emitt er
Saturation Voltage
∗ DC Current Gain IC=2A VCE=5V
RESI STIVE LOAD
Storage Ti me
s
INDUCTIV E LO AD
Storage Ti me
s
t
Fall Time
f
INDUCTIV E LO AD
Storage Ti me
s
t
Fall Time
f
IC=1A IB=0.2A
=2A IB=0.4A
I
C
=3A IB=0.6A
I
C
=4A IB=1A
I
C
=5A IB=1A 0.7
I
C
IC=1A IB=0.2A
=2A IB=0.4A
I
C
=3A IB=0.6A
I
C
8
=10mA VCE=5V
I
C
10
IC=2A IB1=-IB2=0.4A
= 2 50 V 2.4 3.5 µs
V
CC
IC=2A IB1=0.4A
V
V
=-5V RBB=0Ω
BE(off )
=250V L=200µH
CL
0.7
50
IC=2A IB1=0.4A
V
V
T
=-5V RBB=0Ω
BE(off )
=250V L=200µH
CL
=125oC
j
1
75
0.5
0.7
1
1
1.1
1.3
1.5
40
1.4
100
µA
µA
V
V
V
V
V
V
V
V
µs
ns
µs
ns
Safe Operating Areas DeratingCurve
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Page 3
BUL138
DCCurrent Gain
Collector-Emitter SaturationVoltage
DC Current Gain
Base-EmitterSaturationVoltage
InductiveFall Time
InductiveStorage Time
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Page 4
BUL138
ReverseBiased SOA RBSOAand InductiveLoad SwitchingTest
Circuits
1) Fast electr on ic switch
2) Non-ind u ct iv e Resistor
3) F ast recov ery rec tifier
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Page 5
TO-220 MECHANICAL DATA
BUL138
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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BUL138
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for theconsequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise underany patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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