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HIGH VOLTAGE FAST-SWITCHING
■ SGS-THOMSONPREFERRED SALESTYPE
■ NPNTRANSISTOR
■ HIGH VOLTAGECAPABILITY
■ LOW SPREADOF DYNAMICPARAMETERS
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
BUL128
NPN POWER TRANSISTOR
APPLICATIONS:
■ ELECTRONICBALLASTSFOR
3
2
1
FLUORESCENT LIGHTING
DESCRIPTION
TO-220
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switchingspeeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintainingthe wide RBSOA.
INTERNAL SCHEMATIC DIAGRAM
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE= 0) 700 V
CES
Collector-Emitter Voltage (IB= 0) 400 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 4 A
I
C
Collect or Peak Current ( tp<5ms) 8 A
CM
Base Current 2 A
I
B
Base Peak Current (tp<5ms) 4 A
BM
Total Dissipat ion at Tc=25oC70W
tot
Stora ge T emperature -65 to 150
stg
Max. Oper at i ng Junct i on T emperat u re 150
T
j
o
C
o
C
February 1998
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BUL128
THERMAL DATA
R
thj-case
R
thj- amb
Ther mal Resistance Junc tion-Case Max
Thermal Resistance Junction-Ambient Max
1.78
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CES
V
EBO
V
CEO(sus)
Collector C ut -off
Current (V
=-1.5V)
BE
=700V
V
CE
V
=700V Tj=125oC
CE
100
500
µA
µA
Emitt er-Base V oltage IE=10mA 9 V
Collector-E mitt er
IC= 100 mA L = 25 mH 400 V
Sust aining Volt age
I
V
CE(sat)
CEO
Collector C ut -Of f
Current (I
B
=0)
∗ Collector- Emitt er
Saturation Voltage
V
∗ Base-Emitt er
BE(sat )
Saturation Voltage
h
∗ DC C urr ent Gain IC=10mA VCE=5V
FE
RESI STIVE LO AD
t
s
t
f
St orage Time
Fall T ime
V
=400V 250 µA
CE
IC=0.5A IB=0.1A
=1A IB=0.2A
I
C
=2.5A IB=0.5A
I
C
=4A IB=1A 0.5
I
C
IC=0.5A IB=0.1A
I
=1A IB=0.2A
C
=2.5A IB=0.5A
I
C
0.7
1
1.5
1.1
1.2
1.3
10
=2A VCE=5V
I
C
Gr oup A
Gr oup B
14
25
28
40
VCC=125 V IC=2A
=0.4A IB2=-0.4A
I
B1
=30µs
T
p
1.5
0.2
3
0.4
V
V
V
V
V
V
V
µs
µs
(see f ig. 2)
INDUCTI V E LOA D
s
t
f
St orage Time
Fall T ime
t
IC=2A IB1=0.4A
V
=-5V RBB=0Ω
BEo f f
clamp
= 200 V
V
0.6
0.1
1
0.2
µs
µs
(see f ig. 1)
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Note : Product is pre-selected inDC current gain (GROUP A and GROUP B). SGS-THOMSON reserves the right toship either groups
according to production availability. Please contact your nearest SGS THOMSON MICROELECTRONICS sales office for delivery details.
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BUL128
Safe Operating Areas
DCCurrent Gain
DeratingCurve
DC Current Gain
CollectorEmitter SaturationVoltage
BaseEmitter Saturation Voltage
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BUL128
InductiveFall Time InductiveStorage Time
ResistiveFall Time Resistive Load Storage Time
ReverseBiased SOA
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Figure1: Inductive Load Switching TestCircuit.
1) Fast electronic switch
2) Non-induct iv e Resistor
3) Fast recovery rect ifier
Figure2: Resistive Load Switching Test Circuit.
BUL128
1) Fast electronic switch
2) Non-induct iv e Resistor
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BUL128
TO-220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
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P011C
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BUL128
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from itsuse. No
license is granted by implication or otherwise under any patent orpatent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts are not authorized for useas criticalcomponentsin life support devices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom -U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
...
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