Page 1
®
HIGH VOLTAGE FAS T-SWITCHING
■ HIGH VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNA MIC PA RA ME TERS
■ MINIMUM LOT-TO-LOT SP R E AD F O R
RELIAB LE OPERATION
■ VERY HIGH SWITCHING SPEED
APPLICATIONS
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING (277 V HALF
BRIDGE AND 120 V PUSH-PULL
TOPOLOGIES)
BUL1203E
NPN POW ER TRANSISTOR
PRELIMINARY DATA
3
2
1
DESCRIPTION
TO-220
The BUL1203E is a new device manufactured
using Diffused Collector technology to enhance
switching speeds and tight h
range while
FE
maintaining a wide RBSOA.
Thanks to his structure it has an intrinsic
ruggedness which enables the transistor to
INTER NAL SCH E M ATI C DIAG RA M
withstand a high collector current level during
Breakdown condition, without using the transil
protection usually necessary in typical converters
for lamp ballast.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
V
I
I
P
T
Collector-BaseVoltage (IE = 0) 1200 V
CBO
Collector-Emitter Voltage (VBE = 0) 1200 V
CES
Collector-Emitter Voltage (IB = 0) 550 V
CEO
Emitter-Base Voltage (IC = 0) 9 V
EBO
Collector Current 5 A
I
C
Collector Peak Current (tp < 5 ms) 8 A
CM
Base Current 2 A
I
B
Base Peak Current (tp < 5 ms) 4 A
BM
Total Dissipation at Tc = 25 oC 100 W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
June 2003
1/7
Page 2
BUL1203E
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.25
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
= 0)
B
∗ Collector-Emitter
= 1200 V 100 µA
V
CE
= 550 V 100 µA
V
CE
I
= 100 mA L = 25 mH 550 V
C
Sustaining Voltage
(I
= 0)
B
V
V
CE(sat)
EBO
Emitter-Base Voltage
(I
= 0)
C
∗ Collector-Emitter
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = 1 mA VCE = 5 V
FE
RESISTIVE LOAD
t
t
E
Turn-on Time
on
Storage Time
s
Fall Time
t
f
Repetitive Avalanche
ar
Energy
= 10 mA 9 V
I
E
IC = 1 A IB = 0.2 A
I
= 2 A IB = 0.4 A
C
I
= 3 A IB = 1 A
C
IC = 2 A IB = 0.4 A
I
= 3 A IB = 1 A
C
0.5
0.7
1.5
1.5
1.5
10
I
= 10 mA VCE = 5 V
C
I
= 0.8 A VCE = 3 V
C
I
= 2 A VCE = 5 V
C
I
= 2 A IB1 = 0.4 A
C
= -0.8 A tp = 30 µs
I
B2
V
= 150 V (see figure 2)
CC
L = 2 mH C = 1.8 nF
V
= 50 V VBE = -5 V
CC
10
14
9
32
28
0.5
2.5
0.2
3.0
0.3
6mJ
(see figure 3)
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
V
V
V
V
V
µs
µs
µs
Safe Operating Are a Derating Curve
2/7
Page 3
DC Current Gain DC Current Gain
Collector -Emit ter Sat urat ion Voltage Base-Emitt er Sat uration Volta ge
BUL120 3 E
Inductive Load Storage Time Inductive Load Fall Time
3/7
Page 4
BUL1203E
Reverse B iased Safe Operating Area
Figure 1: Inductive Load Switching Test Circuit
Figure 2: Resistive Load Switching Test Circuit
4/7
Page 5
Figure 3: Energy Rating Test Circuit
BUL120 3 E
5/7
Page 6
BUL1203E
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.052
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10.00 10.40 0.394 0.409
L2 16.40 0.645
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154
M 2.60 0.102
DIA. 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
6/7
P011CI
Page 7
BUL120 3 E
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectro nics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
7/7
Loading...