Page 1
®
MEDIUM VOLTAGE FAST-SWITCHING
■ INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT- TO- LO T SPR E AD FO R
RELIABLE OPERATION
■ VERY H IGH SWITCHING SPEED
APPLICATIONS:
■ COMPACT FLUO RES CENT LAMPS UP T O
23 W AT 110 V A.C. MAINS
■ FLYBACK AND FOR WARD S INGLE
TRANSI ST OR LOW POWER CO N V ERT E RS
AT 110 V A.C. MAINS
DESCRIPTION
The device is manufactured using Multi Epitaxial
Planar technology for high switching speeds and
medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
BUL116D
NPN POWER TRANSISTOR
PRELIMINARY DATA
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
February 2003
Collector-Emitter Voltage (VBE = 0) 400 V
CES
Collector-Emitter Voltage (IB = 0) 200 V
CEO
Emitter-Base Voltage (IC = 0) 9 V
EBO
Collector Current 5 A
I
C
Collector Peak Current (tp < 5 ms) 10 A
CM
Base Current 2 A
I
B
Base Peak Current (tp < 5 ms) 4 A
BM
Total Dissipation at Tc = 25 oC60W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
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Page 2
BUL116D
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
2.08
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
V
V
CEO(sus)
EBO
Collector Cut-off
Current (V
BE
= 0)
Emitter-Base Voltage
(I
= 0)
C
∗ Collector-Emitter
= 400 V
V
CE
V
= 400 V Tc = 125 oC
CE
= 10 mA 9 V
I
E
I
= 100 mA 200 V
C
100
500
Sustaining Voltage
(I
= 0)
B
I
V
CE(sat)
CEO
Collector Cut-off
Current (I
= 0)
B
∗ Collector-Emitter
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = 10 mA VCE = 5 V
FE
RESISTIVE LOAD
Rise Time
t
r
Fall Time
t
f
t
Storage Time
s
INDUCTIVE LOAD
t
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Storage Time
s
Fall Time
t
f
Diode Forward Voltage IC = 2 A 1.5 V
F
= 200 V 250 µA
V
CE
IC = 0.5 A IB = 50 mA
I
= 1 A IB = 0.1 A
C
I
= 3 A IB = 0.6 A
C
I
= 5 A IB = 1 A
C
IC = 1 A IB = 0.1 A
I
= 5 A IB = 1 A
C
0.25
0.4
0.7
1.2
1.1
1.5
10
I
= 5 A VCE = 5 V
C
V
= 125 V IC = 2 A
CC
I
= 0.4 A IB2 = -0.4 A
B1
= 30 µs (see figure 2)
t
p
820
0.2
0.2
0.4
1.4
IC = 2 A IB1 = 0.4 A
= -5 V L = 500 µH
V
BE
V
= 180 V (see figure 1)
clamp
0.5
0.1
µA
µA
V
V
V
V
V
V
µs
µs
µs
µs
µs
Safe Operating Are a Derating Curve
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Page 3
BUL116D
DC Current Gain
Collector-Em itter Sat uration Volt a ge
DC Current Gain
Base-Emitter Saturation Voltage
Switching Time Resistive Load
Switching Time Inductive Load
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BUL116D
Reverse B iased SOA
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
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Page 5
TO-220 MECHANICAL DATA
BUL116D
DIM.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.052
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10.00 10.40 0.394 0.409
L2 16.40 0.645
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154
M 2.60 0.102
DIA. 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
P011CI
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BUL116D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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